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Untitled Abstract: No abstract text available Text: Technologies GmbH & Co. KG CYTY108A InSb HALL-EFFECT ELEMENT Hall-effect element CYTY108A is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage	Original	PDF	CYTY108A CYTY108A 10sec 300g/30sec 200pF, D-85464
Untitled Abstract: No abstract text available Text: Technologies GmbH & Co. KG CYTY108A InSb HALL-EFFECT ELEMENT Hall-effect element CYTY108A is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage	Original	PDF	CYTY108A CYTY108A 40DERING 10sec 300g/30sec 200pF, D-85464
Untitled Abstract: No abstract text available Text: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into	Original	PDF	CYTY108A, CYTY320, CYTY300B-CS) CYTY211) D-85464
Untitled Abstract: No abstract text available Text: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into	Original	PDF	RanCYTY108A, CYTY320, CYTY108A, CYTY300B-CS) CYTY211) D-85464