CY7C199C Search Results

Contextual Info: CY7C199CN 256-Kbit 32 K x 8 Static RAM 256-Kbit (32 K × 8) Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power

85031

Abstract: CY7C199CN cy7c199cn-15pxc
Contextual Info: CY7C199CN 256K 32K x 8 Static RAM General Description [1] Features • • • • • • • • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL-compatible inputs and outputs

CY7C199CN

Abstract: TSOP 173 g
Contextual Info: CY7C199CN 256K 32K x 8 Static RAM General Description [1] Features • • • • • • • • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL-compatible inputs and outputs

Contextual Info: CY7C199CN 256K 32K x 8 Static RAM General Description [1] Features • • • • • • • • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL-compatible inputs and outputs

10 micro farad capacitor

Contextual Info: CY7C199CN Automotive 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 12 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor-transistor logic (TTL) compatible inputs and outputs

Contextual Info: CY7C199D Automotive 256 K 32 K x 8 Static RAM 256 K (32 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ Automotive-E: –40 °C to 125 °C ■ Operating voltage VCC = 5 V ■ Pin and function compatible with CY7C199C ■ High speed

CY7C199D-10VXI

Abstract: 1709 013 CY7C199C CY7C199D CY7C199D-10ZXI 7C199D-10 18THD
Contextual Info: CY7C199D 256K 32K x 8 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C199C The CY7C199D is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active

CY7C199C

Abstract: MIL-STD-883 Method 2001
Contextual Info: CY7C199C 32K x 8 Static RAM General Description1 Features • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns • Wide voltage range: 5.0V ± 10% 4.5V to 5.5V • CMOS for optimum speed/power • TTL–compatible Inputs and Outputs • Available in 28 DIP, 28 SOJ, and 28 TSOP I.

Contextual Info: CY7C199D 256-Kbit 32 K x 8 Static RAM 256-Kbit (32 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ –40 °C to 85 °C ■ Pin and function compatible with CY7C199C ■ High speed ❐ tAA ■ = 10 ns Low active power ❐ ICC

cy7c199d

Abstract: cypress AN1064 sram system guidelines
Contextual Info: CY7C199D 256 K 32 K x 8 Static RAM 256 K (32 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ –40 °C to 85 °C ■ Pin and function compatible with CY7C199C ■ High speed ❐ tAA ■ = 10 ns Low active power ❐ ICC ■

Contextual Info: CY7C199CN 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 15 ns and 20 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor transistor logic (TTL) compatible inputs and outputs

12VXA

Contextual Info: CY7C199CN 256K 32K x 8 Static RAM General Description[1] Features • • • • • • • • • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL-compatible inputs and outputs

CY7C199CN

Abstract: CY7C199CN-15PXC CY7C199CN-15VXC CY7C199CN-20ZXI CY7C199CNL-15VXI 199CN
Contextual Info: CY7C199CN 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power The CY7C199CN is a high performance CMOS Asynchronous

CY7C199D-10VXI

Abstract: CY7C199D-10ZXI CY7C199C CY7C199D MO088
Contextual Info: CY7C199D 256K 32K x 8 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C199C The CY7C199D is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active

Contextual Info: CY7C199D 256 K 32 K x 8 Static RAM 256 K (32 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ –40 °C to 85 °C ■ Pin and function compatible with CY7C199C ■ High speed ■ Low active power ❐ tAA ❐ ICC ■ The CY7C199D is a high performance CMOS static RAM

Contextual Info: CY7C199CN Automotive 256 K 32 K x 8 Static RAM General Description [1] Features The CY7C199CN Automotive is a high performance CMOS Asynchronous SRAM organized as 32 K by 8 bits that supports an asynchronous memory interface. The device features an automatic power down feature that reduces power consumption

CY7C199CN

Abstract: CY7C199CN-15PXC CY7C199CN-15VXC CY7C199CN-20ZXI CY7C199CNL-15VXI
Contextual Info: CY7C199CN 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 15 ns and 20 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ CMOS for optimum speed and power The CY7C199CN is a high performance CMOS Asynchronous SRAM organized as 32K by 8 bits that supports an asynchronous

TSOP 173 g

Abstract: CY7C199C-20VXC CY7C199CL-15VC CY7C199C CY7C199C-15PXC 15VXI
Contextual Info: CY7C199C 256K 32K x 8 Static RAM Features General Description • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns • Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) • CMOS for optimum speed/power • TTL–compatible Inputs and Outputs • Available in 28 DIP, 28 SOJ, and 28 TSOP I packages

Contextual Info: CY7C199CN Automotive 256-Kbit 32 K x 8 Static RAM 256-Kbit (32 K × 8) Static RAM Features General Description • Fast access time: 12 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power

CY7C199C

Contextual Info: CY7C199C 256K 32K x 8 Static RAM Features General Description • Fast access time: 12 ns The CY7C199C is a high-performance CMOS Asynchronous SRAM organized as 32K by 8 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces

Contextual Info: CY7C199CN 256 K 32 K x 8 Static RAM General Description [1] Features • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor transistor logic (TTL) compatible inputs and outputs

AN1064

Abstract: CY7C199C CY7C199D CY7C199D-10VXI CY7C199D-10ZXI BUT14
Contextual Info: CY7C199D 256K 32K x 8 Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C ■ Pin and function compatible with CY7C199C ■ High speed The CY7C199D is a high performance CMOS static RAM

CY7C199CNL-15VXI

Contextual Info: CY7C199CN 256K 32K x 8 Static RAM Features General Description • Fast access time: 12 ns, 15 ns, 20 ns and 25 ns • Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) • CMOS for optimum speed/power • TTL-compatible Inputs and Outputs • Available in 28 DIP, 28 SOJ, and 28 TSOP I packages

AN1064

Abstract: CY7C199C CY7C199D CY7C199D-10VXI CY7C199D-10ZXI TSOP 66 thermal resistance
Contextual Info: CY7C199D 256K 32K x 8 Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C ■ Pin and function compatible with CY7C199C ■ High speed The CY7C199D is a high performance CMOS static RAM