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    CY7C1061 Search Results

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    CY7C1061 Price and Stock

    Infineon Technologies AG CY7C1061G30-10ZSXIT

    IC SRAM 16MBIT PAR 54TSOP II
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    DigiKey CY7C1061G30-10ZSXIT Reel 2,000 1,000
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    Avnet Americas CY7C1061G30-10ZSXIT Reel 1,000 8 Weeks 1,000
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    Mouser Electronics CY7C1061G30-10ZSXIT
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    Newark CY7C1061G30-10ZSXIT Cut Tape 1
    • 1 $53
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    Chip One Stop CY7C1061G30-10ZSXIT Cut Tape 1,000 0 Weeks, 1 Days 1
    • 1 $44.8
    • 10 $39.4
    • 100 $34.1
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    EBV Elektronik CY7C1061G30-10ZSXIT 9 Weeks 1,000
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    Vyrian CY7C1061G30-10ZSXIT 932
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    Cypress Semiconductor CY7C1061GN30-10BVXI

    NO WARRANTY
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    DigiKey CY7C1061GN30-10BVXI Tray 1,886 1
    • 1 $17.46
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    Flip Electronics CY7C1061GN30-10BVXI 113
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    Cypress Semiconductor CY7C1061GE30-10ZXI

    NO WARRANTY
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    DigiKey CY7C1061GE30-10ZXI Tray 1,149 1
    • 1 $10.78
    • 10 $9.201
    • 100 $7.92542
    • 1000 $6.88574
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    Rochester Electronics LLC CY7C1061DV18-15ZSXI

    IC SRAM 16MBIT PAR 54TSOP II
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    DigiKey CY7C1061DV18-15ZSXI Tube 918 10
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    Cypress Semiconductor CY7C1061G18-15BV1XI

    NO WARRANTY
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    DigiKey CY7C1061G18-15BV1XI Tray 241 1
    • 1 $13.16
    • 10 $11.242
    • 100 $9.80875
    • 1000 $9.18439
    • 10000 $9.18439
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    CY7C1061 Datasheets (159)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C10612DV33-10ZSXI Cypress Semiconductor 16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V; Original PDF
    CY7C10612DV33-10ZSXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 10NS 54TSOP Original PDF
    CY7C10612DV33-10ZSXIT Cypress Semiconductor 16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V; Original PDF
    CY7C10612DV33-10ZSXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 10NS 54TSOP Original PDF
    CY7C10612G30-10ZSXI Cypress Semiconductor Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 54TSOP Original PDF
    CY7C10612G30-10ZSXIT Cypress Semiconductor Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 54TSOP Original PDF
    CY7C10612GE30-10ZSXI Cypress Semiconductor Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 54TSOP Original PDF
    CY7C10612GE30-10ZSXIT Cypress Semiconductor Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 54TSOP Original PDF
    CY7C10612GN30-10ZSXI Cypress Semiconductor ASYNC SRAMS Original PDF
    CY7C10612GN30-10ZSXIT Cypress Semiconductor ASYNC SRAMS Original PDF
    CY7C106-12VC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C106-15VC Cypress Semiconductor 256K x 4 Static RAM Original PDF
    CY7C1061AV25 Cypress Semiconductor 1M x 16 Static RAM Original PDF
    CY7C1061AV25-10BAC Cypress Semiconductor Original PDF
    CY7C1061AV25-10BAI Cypress Semiconductor Original PDF
    CY7C1061AV25-10ZC Cypress Semiconductor 1M x 16 Static RAM Original PDF
    CY7C1061AV25-10ZI Cypress Semiconductor Original PDF
    CY7C1061AV25-12BAC Cypress Semiconductor Original PDF
    CY7C1061AV25-12BAI Cypress Semiconductor Original PDF
    CY7C1061AV25-12ZC Cypress Semiconductor Original PDF
    ...

    CY7C1061 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip


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    CY7C1061G/CY7C1061GE 16-Mbit ns/15 90-mA 20-mA PDF

    CY7C1061DV33-10BVXI

    Abstract: CY7C1061DV33 CY7C1061DV33-10ZXI TSOP 54 thermal resistance CY7C1061 TSOP II 54 Package
    Text: CY7C1061DV33 PRELIMINARY 16-Mbit 1M x 16 Static RAM Features Functional Description • High speed The CY7C1061DV33 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. — tAA = 10 ns Writing to the device is accomplished by enabling the chip


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    CY7C1061DV33 16-Mbit CY7C1061DV33 I/O15) 48-ball CY7C1061DV33-10BVXI CY7C1061DV33-10ZXI TSOP 54 thermal resistance CY7C1061 TSOP II 54 Package PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip


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    CY7C1061G/CY7C1061GE 16-Mbit ns/15 90-mA 20-mA PDF

    2800-121

    Abstract: No abstract text available
    Text: CY7C1061DV18 16-Mbit 1M X 16 Static RAM Features Functional Description • High Speed ❐ tAA = 15 ns The CY7C1061DV18 is a high performance CMOS Static RAM (SRAM) organized as 1,048,576 words by 16 bits. ■ Low Active Power ❐ ICC = 150 mA at 15 ns ■


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    CY7C1061DV18 16-Mbit CY7C1061DV18 I/O15) 2800-121 PDF

    CY7C1061

    Abstract: CY7C1061AV33-12ZI
    Text: CY7C1061AV33 1M x 16 Static RAM Features WE input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through


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    CY7C1061AV33 54-pin 60-ball I/O15) 48BGA pF/10 48-Ball CY7C1061 CY7C1061AV33-12ZI PDF

    CY7C1061BV33-10ZXC

    Abstract: CY7C1061BV33 CY7C1061BV33-10ZC CY7C1061BV33-10ZI CY7C1061BV33-12ZXI CY7C1061
    Text: CY7C1061BV33 16-Mbit 1M x 16 Static RAM Features Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into


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    CY7C1061BV33 16-Mbit I/O15) 54-pin CY7C1061BV33 CY7C1061BV33-10ZXC CY7C1061BV33-10ZC CY7C1061BV33-10ZI CY7C1061BV33-12ZXI CY7C1061 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1061AV33 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1061AV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ 990 mW (max)


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    CY7C1061AV33 16-Mbit CY7C1061AV33 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1061DV33 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1061DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ ICC = 175 mA at 100 MHz


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    CY7C1061DV33 16-Mbit CY7C1061DV33 I/O15) PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1061AV33 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1061AV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ 990 mW (max)


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    CY7C1061AV33 16-Mbit CY7C1061AV33 PDF

    CY7C1061AV33-12ZXC

    Abstract: No abstract text available
    Text: CY7C1061AV33 1M x 16 Static RAM Features WE input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through


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    CY7C1061AV33 54-pin 60-ball I/O15) 48BGA pF/10 48-Ball CY7C1061AV33-12ZXC PDF

    CY7C1061

    Abstract: CY7C10612DV33-10ZSXI
    Text: CY7C10612DV33 16-Mbit 1 M x 16 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C10612DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ ICC = 175 mA at 10 ns ■


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    CY7C10612DV33 16-Mbit CY7C10612DV33 I/O15) CY7C1061 CY7C10612DV33-10ZSXI PDF

    CY7C1061DV33

    Abstract: CY7C1061DV33-10BVXI CY7C1061DV33-10ZSXI TSOP II 54 Package CY7C1061 cy7c1061dv33-10bv1xi
    Text: CY7C1061DV33 16-Mbit 1 M x 16 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1061DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ ICC = 175 mA at 10 ns ■ Low CMOS standby power


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    CY7C1061DV33 16-Mbit CY7C1061DV33 I/O15) CY7C1061DV33-10BVXI CY7C1061DV33-10ZSXI TSOP II 54 Package CY7C1061 cy7c1061dv33-10bv1xi PDF

    CY7C1061DV33-10BV1XI

    Abstract: cy7c1061dv33 10bv BV1X BVJ 47
    Text: CY7C1061DV33 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1061DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ ICC = 175 mA at 100 MHz


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    CY7C1061DV33 16-Mbit CY7C1061DV33 I/O15) 727-CY7C1061DV3310ZS CY7C1061DV33-10ZSXI CY7C1061DV33-10BV1XI 10bv BV1X BVJ 47 PDF

    CY7C1061

    Abstract: No abstract text available
    Text: CY7C10612DV33 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C10612DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power


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    CY7C10612DV33 16-Mbit CY7C10612DV33 I/O15) CY7C1061 PDF

    CY7C1061AV33

    Abstract: CY7C1061AV33-10BAC CY7C1061AV33-10BAXI CY7C1061AV33-10ZI CY7C1061AV33-10ZXC CY7C1061AV33-10ZXI CY7C1061AV33-12ZC CY7C1061AV33-12ZXC CY7C1061AV
    Text: CY7C1061AV33 16-Mbit 1M x 16 Static RAM Features Functional Description • High speed The CY7C1061AV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. — tAA = 10 ns • Low active power To write to the device, enable the chip (CE1 LOW and CE2


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    CY7C1061AV33 16-Mbit CY7C1061AV33 pF/10 54-pin 48-Ball 60-Ball CY7C1061AV33-10BAC CY7C1061AV33-10BAXI CY7C1061AV33-10ZI CY7C1061AV33-10ZXC CY7C1061AV33-10ZXI CY7C1061AV33-12ZC CY7C1061AV33-12ZXC CY7C1061AV PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1061AV33 16-Mbit 1M x 16 Static RAM Features Functional Description • High speed The CY7C1061AV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. — tAA = 10 ns • Low active power To write to the device, enable the chip (CE1 LOW and CE2


    Original
    CY7C1061AV33 16-Mbit 54-pin 60-ball CY7C1061AV33 PDF

    CY7C1061

    Abstract: 54-pin TSOP thermal resistance junction to case
    Text: CY7C1061BV33 16-Mbit 1M x 16 Static RAM Features Functional Description • High speed The CY7C1061BV33 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. — tAA = 8, 10, 12 ns Writing to the device is accomplished by enabling the chip (CE


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    CY7C1061BV33 16-Mbit CY7C1061BV33 I/O15) CY7C1061 54-pin TSOP thermal resistance junction to case PDF

    CY7C1061

    Abstract: No abstract text available
    Text: CY7C1061DV33 PRELIMINARY 16-Mbit 1M x 16 Static RAM Features Functional Description • High speed The CY7C1061DV33 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. — tAA = 10 ns Writing to the device is accomplished by enabling the chip


    Original
    CY7C1061DV33 16-Mbit 54-pin 48-ball CY7C1061DV33 CY7C1061 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1061DV33 16-Mbit 1M x 16 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1061DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ ICC = 175 mA at 10 ns ■ Low CMOS standby power


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    CY7C1061DV33 16-Mbit CY7C1061DV33 PDF

    CY7C1061AV25

    Abstract: CY7C1061AV25-8ZC CY7C1061AV25-8ZI CY7C1061A CY7C1061AV25-10BAI
    Text: CY7C1061AV25 PRELIMINARY 1M x 16 Static RAM Features specified on the address pins A0 through A19 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).


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    CY7C1061AV25 I/O15) CY7C1061AV25 CY7C1061AV25-8ZC CY7C1061AV25-8ZI CY7C1061A CY7C1061AV25-10BAI PDF

    CY7C1061DV33

    Abstract: CY7C1061DV33-10BVXI CY7C1061DV33-10ZSXI
    Text: CY7C1061DV33 16-Mbit 1M x 16 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1061DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. ■ Low active power ❐ ICC = 175 mA at 10 ns ■ Low CMOS standby power


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    CY7C1061DV33 16-Mbit CY7C1061DV33 CY7C1061DV33-10BVXI CY7C1061DV33-10ZSXI PDF

    CY7C1061

    Abstract: CY7C1061AV33 CY7C1061AV33-8ZC CY7C1061AV33-8ZI CY7C1061AV33-8BAI CY7C1061AV33-12ZI
    Text: CY7C1061AV33 1M x 16 Static RAM Features specified on the address pins A0 through A19 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19). • High speed


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    CY7C1061AV33 I/O15) 15-ns 10-ns 48BGA pF/10 54-pin CY7C1061 CY7C1061AV33 CY7C1061AV33-8ZC CY7C1061AV33-8ZI CY7C1061AV33-8BAI CY7C1061AV33-12ZI PDF

    CY7C1061AV33

    Abstract: CY7C1061AV33-10BAC CY7C1061AV33-10BAXI CY7C1061AV33-10ZI CY7C1061AV33-10ZXC CY7C1061AV33-10ZXI CY7C1061AV33-12ZC CY7C1061AV33-12ZXC CY7C1061
    Text: CY7C1061AV33 16-Mbit 1M x 16 Static RAM Features Functional Description • High speed The CY7C1061AV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. — tAA = 10 ns • Low active power To write to the device, enable the chip (CE1 LOW and CE2


    Original
    CY7C1061AV33 16-Mbit CY7C1061AV33 54-pin 48-Ball 60-Ball CY7C1061AV33-10BAC CY7C1061AV33-10BAXI CY7C1061AV33-10ZI CY7C1061AV33-10ZXC CY7C1061AV33-10ZXI CY7C1061AV33-12ZC CY7C1061AV33-12ZXC CY7C1061 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C10612G CY7C10612GE PRELIMINARY 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features • High speed ❐ tAA = 10 ns ■ Embedded error-correcting code (ECC) for single bit error correction ■ Low active power ❐ ICC = 90mA typical ■


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    CY7C10612G CY7C10612GE 16-Mbit 54-pin PDF