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    Cypress Semiconductor CY7C1021V33L-15ZI

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    CY7C1021V33L15ZI Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C1021V33L-15ZI Cypress Semiconductor 64K x 16 Static RAM Original PDF

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    CY7C1021V33-15VI

    Abstract: 1021V-10 CY7C1021V33L-15ZI CY7C1021V33 CY7C1021V CY7C1021V33-12ZC CY7C1021V33L15ZI CY7C1021V33L15BAC CY7C1021V33-12BAI
    Text: fax id: 1077 CY7C1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1021V I/O16) CY7C1021V33-15VI 1021V-10 CY7C1021V33L-15ZI CY7C1021V33 CY7C1021V CY7C1021V33-12ZC CY7C1021V33L15ZI CY7C1021V33L15BAC CY7C1021V33-12BAI

    CY7C1021V

    Abstract: No abstract text available
    Text: 021V CY7C1021V 64K x 16 Static RAM Features • 3.3V operation 3.0V–3.6V • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.)


    Original     		PDF CY7C1021V 44-pin 400-mil 48-Ball CY7C1021V

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    CY7C1021V

    Abstract: No abstract text available
    Text: CY7C1021V 64K x 16 Static RAM Features • 3.3V operation 3.0V–3.6V • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected


    Original     		PDF CY7C1021V 44-pin 400-mil 48-Ball CY7C1021V

    A12C

    Abstract: A14C A15C CY7C1021V
    Text: fax id: 1077 C Y7C 1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/O-i through l/Og), is written into the location specified on the address pins (Aq


    OCR Scan     		PDF 44-pin 400-mil CY7C1021V CY7C1021V A12C A14C A15C

    1021V

    Abstract: No abstract text available
    Text: fax id: 1077 C Y7C 1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/0-| through l/Og), is written into the location specified on the address pins (Aq


    OCR Scan     		PDF 44-pin 400-mil 1021V

    CY7C1021V33

    Abstract: 1021V-10 3310Z
    Text: fax id: 1077 C Y7C 1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable UE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/O i through l/0 8), is written into the location specified on the address pins (A0


    OCR Scan     		PDF 10/12/15n 44-pin 400-m CY7C1021V33 1021V-10 3310Z