CY7C1020B Search Results

CY7C1020B

Contextual Info: 020B CY7C1020B 32K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

Contextual Info: CY7C1020B 32K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CY7C1020BN

Contextual Info: CY7C1020BN 32K x 16 Static RAM Features Functional Description • High speed The CY7C1020BN is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected.

Contextual Info: CY7C1020CV33 32K x 16 Static RAM Features • Pin- and function-compatible with CY7C1020BV33 • High speed — tAA = 8, 10, 12, 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Automatic power-down when deselected • Independent control of upper and lower bits

Contextual Info: CY7C1020BN 32K x 16 Static RAM Features Functional Description • High speed The CY7C1020BN is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected.

Contextual Info: CY7C1020D 512K 32K x 16 Static RAM Features • Pin- and function-compatible with CY7C1020B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10ns • Low CMOS Standby Power • • • • • — ISB2 = 3 mA 2.0V Data Retention Automatic power-down when deselected

TSOP 66 Package thermal resistance

Contextual Info: CY7C1020D 512K 32K x 16 Static RAM Features Functional Description [1] • Pin- and function-compatible with CY7C1020B ■ High speed The CY7C1020D is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power

CY7C1020B-15ZXC

Abstract: CY7C1020B
Contextual Info: CY7C1020B 32K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

10-ZS

Contextual Info: CY7C1020D 512K 32K x 16 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C1020B The CY7C1020D is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces

CY7C1020B

Abstract: CY7C1020D
Contextual Info: CY7C1020D 512K 32K x 16 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C1020B The CY7C1020D is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces

CY7C1020B

Abstract: CY7C1020D
Contextual Info: CY7C1020D 512K 32K x 16 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C1020B The CY7C1020D is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces

CY7C1020BN

Contextual Info: CY7C1020BN 32K x 16 Static RAM Features Functional Description • High speed The CY7C1020BN is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected.

Contextual Info: CY7C1020D 512-Kbit 32 K x 16 Static RAM 512-Kbit (32 K × 16) Static RAM Features • Pin- and function-compatible with CY7C1020B ■ High speed ❐ tAA ■ = 10 ns Low active power ❐ ICC ■ consumption when deselected.The input and output pins (IO0 through IO15) are placed in a high-impedance state when:

CY7C1020B

Contextual Info: CY7C1020B 32K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

Contextual Info: PRELIMINARY CY7C1020D 512K 32K x 16 Static RAM Features automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1020B • High speed — tAA = 10 ns • CMOS for optimum speed/power

CY7C1020B

Contextual Info: 020B CY7C1020B 32K x 16 Static RAM Features written into the location specified on the address pins A0 through A15 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A15).

1H08S

Abstract: PI6C2405A-1HW ASM706CUA SOIC-6 microchip ADM809RAR ADM705AN MAX809SEUR T ASM5P2309-1H-16-S K7N163601B MAX810JEUR
Contextual Info: Supervisors Cross Reference Guide Alliance Maxim/Dallas IMP ASM1232LP DS1232LPS-2 IMP1232LP ASM1232LPCMA DS1232LP IMP1232LPCMA ASM1232LPEMA DS1232LP IMP1232LPEMA ASM1232LPN DS1232LP IMP1232LPN Analog Devices Micrel Microchip MIC1232N TC1232CPA - - - - - -

vhdl code for dice game

Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
Contextual Info: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer

ADM809RAR

Abstract: AS7C256A hsbga 416 lcd cross reference IDT CYPRESS CROSS REFERENCE clocks DS1232* watch dog timer Product Selector Guide mbg* sot143 FS781 IDT74SSTV16857
Contextual Info: DISCLAIMER Alliance Semiconductor Corporation reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. Alliance Semiconductor does not assume any responsibility for use of any circuitry described other than the circuitry embodied

K6X0808C1D-BF55

Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Contextual Info: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI