CY62138 Search Results

CY62138V

Abstract: CY62138VL-70ZI CY62138VLL-70ZI
Contextual Info: CYPRESS PRELIMINARY CY62138V MoBL 256K x 8 Static RAM Features W riting to the device is acco m p lished by ta kin g chip enable one CS-| and w rite enable (W E) inputs LO W and chip enable tw o (C S 2) input HIG H. Data on th e eight I/O pins (I/Oq through

Contextual Info: CY62138EV30 MoBL ® 2-Mbit 256 K x 8 MoBL Static RAM 2-Mbit (256 K × 8) MoBL® Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62138EV30 is a high performance CMOS static RAM organized as 256K words by eight bits. This device features

Contextual Info: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

CY62138F

Abstract: CY62138FLL-45SXI CY62138FLL-45ZSXI CY62138V
Contextual Info: CY62138F MoBL 2-Mbit 256K x 8 Static RAM Functional Description [1] Features • • • • High speed: 45 ns Wide voltage range: 4.5 V – 5.5 V Pin compatible with CY62138V Ultra low standby power — Typical standby current: 1 µA — Maximum standby current: 5 µA

cy62138

Abstract: CY62138FV30 CY62138FV30LL CY62138FV30LL-45BVXI CY62138FV30LL-45SXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZSXI CY62138FV30LL-45ZXI
Contextual Info: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Features Functional Description The CY62138FV30[1] is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

1024KX8

Abstract: CY62138FV30LL-45ZXI
Contextual Info: CY62138FV30 MoBL PRELIMINARY 2-Mbit 256K x 8 MoBL® Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62138FV30 is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.

Contextual Info: CY62138EV30 MoBL ® 2-Mbit 256 K x 8 MoBL Static RAM 2-Mbit (256 K × 8) MoBL® Static RAM Functional Description Features The CY62138EV30 is a high performance CMOS static RAM organized as 256K words by eight bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: CY62138F MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • High speed: 45 ns The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

CY62138FV30

Abstract: CY62138FV30LL CY62138FV30LL-45BVXI CY62138FV30LL-45SXI CY62138FV30LL-45ZAXI CY62138FV30LL-45ZSXI CY62138FV30LL-45ZXI 90-nm
Contextual Info: CY62138FV30 MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • Very high-speed: 45 ns The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: CY62138F MoBL 2-Mbit 256K x 8 Static RAM Functional Description[1] Features • • • • High speed: 45 ns Wide voltage range: 4.5 V – 5.5 V Pin compatible with CY62138V Ultra low standby power The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features

Contextual Info: CY62138VN MoBL 256K x 8 Static RAM Features Functional Description • Temperature Ranges — Industrial: –40°C to 85°C • Low voltage range: — 2.7–3.6V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features

ecn1310

Contextual Info: CY62138F MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • High speed: 45 ns The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

CY62138V

Abstract: CY62138VLL-70BAI
Contextual Info: CY62138V MoBL 2-Mbit 256K x 8 Static RAM This is ideal for providing More Battery Life™ (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The

CY62138V

Abstract: CY62138VL-70ZI
Contextual Info: PRELIMINARY CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 1.8−3.3V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

CY62138CV30

Abstract: CY62138EV30 CY62138EV30LL CY62138EV30LL-45BVXI
Contextual Info: CY62138EV30 MoBL 2-Mbit 256K x 8 MoBL® Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62138EV30 is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.

Contextual Info: CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 1 .8 -3 .3V • Ultra-low active power • Low standby power • Easy memory expansion with C S i/C S 2 and OE features • TTL-com patible inputs and outputs • Automatic power-down when deselected

Contextual Info: CY62138FV30 MoBL 2-Mbit 256K x 8 MoBL® Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62138FV30 is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.

Contextual Info: CY62138FV30 MoBL 2-Mbit 256K x 8 Static RAM Features Functional Description The CY62138FV30[1] is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

Contextual Info: 2-Mbit 256K x 8 Static RAM Functional Description [1] Features • • • • Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Pin compatible with CY62138CV25/30/33 Ultra low standby power The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features

cy62138

Abstract: CY62138CV30 CY62138EV30 CY62138EV30LL CY62138EV30LL-45BVXI bga thermal resistance 36-Ball
Contextual Info: CY62138EV30 MoBL 2-Mbit 256K x 8 MoBL® Static RAM Functional Description[1] Features • Very high speed: 45 ns The CY62138EV30 is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.

38-00729-A

Abstract: 10J1 CY62138V CY62138VL-70BAI fbga Substrate design guidelines
Contextual Info: CY62138V MoBL T M F/ CYPRESS 256K x 8 Static RAM sumption by 99% when addresses are not toggling. The device can be put into standby mode when deselected CS-| HIGH or CS2 LOW . Features • Low voltage range: -2 .7 -3 .6 V • • • • • • Ultra-low active power

ecn1310

Contextual Info: CY62138F MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • High speed: 45 ns The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

CY62137V

Abstract: CY62138V
Contextual Info: Cypress Semiconductor Qualification Report QTP# 99075 VERSION 1.0 April, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Cypress Semiconductor

CY62138V

Abstract: CY62138VLL-70BAI CY62138VLL
Contextual Info: CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 2.7–3.6V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected