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    CW 7808 Search Results

    CW 7808 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADS7808UB Texas Instruments 12-Bit 10us Serial CMOS Sampling Analog-to-Digital Converter 20-SOIC -40 to 85 Visit Texas Instruments Buy
    ADS7808U Texas Instruments 12-Bit 10us Serial CMOS Sampling Analog-to-Digital Converter 20-SOIC -40 to 85 Visit Texas Instruments Buy
    UA7808CKCT Texas Instruments 1.5-A, 40-V fixed positive linear regulator 3-TO-220 0 to 125 Visit Texas Instruments Buy
    ADS7808U/1K Texas Instruments 12-Bit 10us Serial CMOS Sampling Analog-to-Digital Converter 20-SOIC -40 to 85 Visit Texas Instruments Buy
    UA7808CKTTR Texas Instruments 1.5-A, 40-V fixed positive linear regulator 3-DDPAK/TO-263 0 to 125 Visit Texas Instruments Buy

    CW 7808 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AB081C20W

    Abstract: No abstract text available
    Text: AB081C20W TECHNICAL DATA High Power Single Bar CW Infrared Laser Diode Features Applications • • • • • • • Output Power: 20 W 780-830 nm Emission Wavelength Spectral Width: ≤3 nm High Reliability, High Efficiency Laser Pumping Medical Usage


    Original     		AB081C20W AB081C20W PDF

    AB081C40W

    Abstract: No abstract text available
    Text: AB081C40W TECHNICAL DATA High Power Single Bar CW Infrared Laser Diode Features Applications • • • • • • • Output Power: 40 W 780-830 nm Emission Wavelength Spectral Width: ≤3 nm High Reliability, High Efficiency Laser Pumping Medical Usage


    Original     		AB081C40W AB081C40W PDF

    blf574

    Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
    Text: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract


    Original     		AN10714 BLF574 BLF574, AN10714 Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d PDF

    laser diode philips

    Abstract: CQL61A sot148d Philips diode OPTICAL LASER PHILIPS
    Text: Philips Components cqlsia _ A_ MEDIUM POWER DOUBLE HETEROSTRUCTURE AIGaAs LASER The CQL61A is a MOVPE grown gain guided double heterostructure laser diode. The laser delivers an o utput power o f 20 mW CW at 25 °C and a wavelength o f about 820 nm.


    OCR Scan     		CQL61A OT148D 6534AE laser diode philips sot148d Philips diode OPTICAL LASER PHILIPS PDF

    AS081C100W

    Abstract: No abstract text available
    Text: AS081C100W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 100 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package


    Original     		AS081C100W AS081C100W PDF

    AS081C60W

    Abstract: No abstract text available
    Text: AS081C60W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 60 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package


    Original     		AS081C60W AS081C60W PDF

    AS081C40W

    Abstract: No abstract text available
    Text: AS081C40W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 40 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package


    Original     		AS081C40W AS081C40W PDF

    AS081C320W

    Abstract: No abstract text available
    Text: AS081C320W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 320 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package


    Original     		AS081C320W AS081C320W PDF

    AS081C480W

    Abstract: No abstract text available
    Text: AS081C480W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 480 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package


    Original     		AS081C480W AS081C480W PDF

    AS081C200W

    Abstract: No abstract text available
    Text: AS081C200W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features • • • • • Applications Output Power: 200 W • 780-830 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency CW stack arrays adopt micro-channel package


    Original     		AS081C200W AS081C200W PDF

    blf578

    Abstract: BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X
    Text: AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 — 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency tuning set-up, high voltage LDMOS, amplifier implementation, Class-C CW, FM band, pulsed power


    Original     		AN10800 BLF578 BLF578, AN10800 BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X PDF

    CQL73

    Abstract: laser diode philips philips cql73 finder type 60.13 cfr 1040
    Text: Philips Components cql73 _ A _ SMALL SIZE COLLIMATOR PEN, 0 2 mm BEAM The CQL73 is a low power collim ator pen, consisting o f a lens and a compact disc diode laser in a 5.6 mm package. This small collim ator pen delivers a maximum CW o u tpu t power o f 1.2 mW and


    OCR Scan     		cql73 CQL73 laser diode philips philips cql73 finder type 60.13 cfr 1040 PDF

    SDL-5401-G1

    Abstract: SDL-5422-H1 SDL laser dbr SDL-5421-G1 SDL 5700 SDL-5431-G1 sdl 5400 SDL laser diode sdl-5400 SDL-5400-G1
    Text: « ê-' •e cu E c£ S E R I E f i I • ■■■■':• 2 S ca Hw *oos %£ UP TO 200 mW CW SINGLE MODE GaAIAs LASER DIODES High power in a diffraction limited, single spatial mode beam is provided by the SDL-5400 Series laser diode. The index guided laser emits in a


    OCR Scan     		TEM00 SDL-5400 SDL-543le 6A05A: SDL-5401-G1 SDL-5422-H1 SDL laser dbr SDL-5421-G1 SDL 5700 SDL-5431-G1 sdl 5400 SDL laser diode SDL-5400-G1 PDF

    CQL70A

    Abstract: laser diode philips CQL70B/D CQL70B CQL70C L70B 820 nm laser diode OPTICAL LASER PHILIPS Reliability Connectors
    Text: CQL70A CQL70B CQL70C Philips Components COLLIMATOR PEN The C Q L 7 0 A / B / C is a low p ow er c o llim a to r pen co n tain in g a M O V P E grow n gain guided G a A IA s laser. T h is c o llim a to r pen delivers a m axim um CW o u tp u t p ow er o f 2.5 m W at 25 °C .


    OCR Scan     		CQL70A CQL70B CQL70C CQL70A/B/C CQL70A laser diode philips CQL70B/D CQL70B CQL70C L70B 820 nm laser diode OPTICAL LASER PHILIPS Reliability Connectors PDF

    DL-3147-060

    Abstract: 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v
    Text: LASER DIODE '05-03 Tottori SANYO Electric Co., Ltd Photonics Business Unit Laser sales Section 1-1-10 Ueno, Taito-ku, Tokyo, 110-8534, JAPAN Tel : +81-3-3837-6272 Fax : +81-3-3837-6390 Photonics Business Unit 5-318, Tachikawa-cho, Tottori-city, Tottori, 680-8634 JAPAN


    Original     		405nm 980nm DL-3147-060 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v PDF

    DL-4146-101

    Abstract: laser diode 405nm 650nm laser diode 200mw DL-4146-101S DL-6147-040 Laser diode 532nm 50mW DL-8141-002 405nm 5mW laser diode DL-3147-260 DL-4146-301
    Text: LASER DIODE 2007-11 SANYO Electric Co.,Ltd Electronic Device Company Sales&Marketing Division Laser Sales Section 1-1-10 Ueno,Taito-ku,Tokyo,110-8534 JAPAN Tel:+81-3-3837-6272 Fax:+81-3-3837-6390 Tottori SANYO Electric Co.,Ltd Electronic Device Company Photonics Business Division


    Original     		PDF

    cga ega to vga converter

    Abstract: cga to vga converter 78p064 cga to vga converter circuits cga ega vga cga ega vga converter cga to vga circuits 7805X PA-78P054GC Anzac Electronics
    Text: 78K/0 Family Development Tools Selection Guide U10005EE1V0SG00 12/94 78K/0 Family Development Tools Selection Guide NEC makes no warranty with respect to this documentation and disclaims any implied warranties of merchantability or fitness for a particular purpose. NEC does


    Original     		78K/0 U10005EE1V0SG00 I-20124 I-00139 F-78142 cga ega to vga converter cga to vga converter 78p064 cga to vga converter circuits cga ega vga cga ega vga converter cga to vga circuits 7805X PA-78P054GC Anzac Electronics PDF

    TRANSISTOR CW 7808

    Abstract: cw 7808 7808 cw SOT502A 7808 voltage regulator ACPR400 BLF1049 transistor 7808
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D379 BLF1049 Base station LDMOS transistor Product specification Supersedes data of 2001 Dec 05 2003 May 14 Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 FEATURES DESCRIPTION


    Original     		M3D379 BLF1049 OT502A ACPR400 SCA75 613524/03/pp12 TRANSISTOR CW 7808 cw 7808 7808 cw SOT502A 7808 voltage regulator ACPR400 BLF1049 transistor 7808 PDF

    TRANSISTOR CW 7808

    Abstract: cw 7808 PDC140 7808 cw NPN transistor 2n2222 BLF0810-180 Transistor 2N2222 2N2222 ATC100A ATC100B
    Text: Application Note BLF0810-180; Linear LDMOS amplifier for multi carrier applications in the 869-894 MHz frequency band By Yong Yang, Igor Blednov and Barney Arntz gain and good gain flatness and phase linearity over the band of interest. The device is available


    Original     		BLF0810-180; OT502 AN01002 TRANSISTOR CW 7808 cw 7808 PDC140 7808 cw NPN transistor 2n2222 BLF0810-180 Transistor 2N2222 2N2222 ATC100A ATC100B PDF

    laser diode philips

    Abstract: diode code ae
    Text: Philips Components cql72a/d _ J _ DEVELOPMENT DATA This data sheet contains advance information and specifications which are subject to change without notice. HIGH POWER COLLIMATOR PEN The CQL72A/D is a high power collim ator pen containing a MOVPE proton bombarded laser. This


    OCR Scan     		CQL72A/D laser diode philips diode code ae PDF

    Isowave

    Abstract: 650nm I-67-SD-5M I-98-SD-5M I-80-SD-5M laser diode 670nm 80Sd
    Text: F R E E S PA C E S E M I D O U B L E O P T I C A L I S O L AT O R S DESCRIPTION ISOWAVE’s semi-double models are available in a variety of wavelengths. These isolators are designed for use with any tunable or single line source where high isolation is required.


    Original     		I-67-SD-5M 650nm 650nm I-67-SD-5M 700-900nm 940-1000nm 780-850nm 950-990nm 50MW/cm2 600-700nm Isowave I-98-SD-5M I-80-SD-5M laser diode 670nm 80Sd PDF

    diode code ae

    Abstract: invisible
    Text: Philips Components cql75a/d _À_ SUPERSEDES D A T A OF DECEMBER 1988 DEVELOPMENT DATA This data s h e e t co n ta in s advance in fo rm a tio n and sp e c ific a tio n s w h ic h are s u b je c t to c h ange w ith o u t n o tice .


    OCR Scan     		CQL75A/D CQL75A/D diode code ae invisible PDF

    cw 7808

    Abstract: voltage regulator 7808 7808 voltage regulator 7808 cw TRANSISTOR CW 7808 transistor 7808 ma 7808 BLF1049
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLF1049 UHF power LDMOS transistor Preliminary specification 2001 Nov 27 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1049 PINNING - SOT502A FEATURES • High power gain


    Original     		M3D379 BLF1049 OT502A SCA73 603516/05/pp9 cw 7808 voltage regulator 7808 7808 voltage regulator 7808 cw TRANSISTOR CW 7808 transistor 7808 ma 7808 BLF1049 PDF

    TRANSISTOR CW 7808

    Abstract: cw 7808 7808 voltage regulator transistor 7808
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLF1049 UHF power LDMOS transistor Preliminary specification 2001 Oct 09 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1049 PINNING - SOT502A FEATURES • High power gain


    Original     		M3D379 BLF1049 BLF1049 OT502A SCA73 603516/05/pp9 TRANSISTOR CW 7808 cw 7808 7808 voltage regulator transistor 7808 PDF