CSTAS70 Search Results

Contextual Info: KM48V512DT CMOS DRAM 512 K x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

ADC0811CCN

Abstract: ch8c 5587 INS8048 ADC0811 ADC0811BCN ADC0811BCV C1995 J20A V20A
Contextual Info: ADC0811 8-Bit Serial I O A D Converter With 11-Channel Multiplexer General Description The ADC0811 is an 8-Bit successive approximation A D converter with simultaneous serial I O The serial input controls an analog multiplexer which selects from 11 input channels or an internal half scale test voltage

Contextual Info: KM44V16100AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: KM44 V 1 6004 AS CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,

Contextual Info: K M 4 4 C 4 10 5 B K CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

Contextual Info: K M4 1 V 4 0 0 0 D J CMOS DRAM ELECTRONICS 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TTtmHE G O mb Df l 337 « S r i G K KMM5322000AV/AVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tflA C KMM5322000AV- 7 KMM5322000AV- 8 KMM5322000AV-10 • • • • •

Contextual Info: IN T E G R A T E D C IR C U IT S UC3174 UC3175 U IX IIT R O D E Full-Bridge Power Amplifier PRELIMINARY FEATURES DESCRIPTION • Precision Current Control • ±800mA Load Current These full-bridge power amplifiers are rated for continuous output current of 0.8 Amperes

KM44C16100AS

Contextual Info: K M 4 4 C 161 OOAS CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package type(SOJ or

Contextual Info: KM48C514DJ CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family o1 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM44V1004DT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

LM361 application note

Abstract: LM161J LM3614 LM161 LM261 LM361 LM361H H10C LM161H LM361M
Contextual Info: LM161 LM261 LM361 High Speed Differential Comparators General Description Features The LM161 LM261 LM361 is a very high speed differential input complementary TTL output voltage comparator with improved characteristics over the SE529 NE529 for which it is a pin-for-pin replacement The device has been optimized

4-bit flash adc

Abstract: Flash-ADC 10-bit Flash-ADC ADC0820CCN 16 bit Flash-ADC ADC0820 application note 20pin 4bit adc 3 bit Flash-ADC waveform recorder ADC0820
Contextual Info: ADC0820 8-Bit High Speed mP Compatible A D Converter with Track Hold Function General Description Features By using a half-flash conversion technique the 8-bit ADC0820 CMOS A D offers a 1 5 ms conversion time and dissipates only 75 mW of power The half-flash technique

ch8 b

Abstract: ADC0844 ADC0844BCJ ADC0844BCN ADC0844CCJ ADC0844CCN ADC0848 ADC0848BCN ADC0848CCN C1995
Contextual Info: ADC0844 ADC0848 8-Bit mP Compatible A D Converters with Multiplexer Options General Description Features The ADC0844 and ADC0848 are CMOS 8-bit successive approximation A D converters with versatile analog input multiplexers The 4-channel or 8-channel multiplexers can

KM48V2100B

Contextual Info: KM48V2000BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM418C256LL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256LL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications

KMM366F400BK

Contextual Info: K M M3 6 6 F 4 0 0 B K DRAM Module ELECTR O NICS KMM366F400BK & KMM366F410BK EDO Mode without buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0BK is a 4M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: KM718V889 256Kx18 Synchronous SRAM 256Kx18-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. - 2 Stage Pipelined Operation With 4 Burst • On-Chip Address Counter. • Self-Timed W ite Cyde. • On-Chip Address and Control Registers.

KM44V16104AK

Abstract: samsung dram
Contextual Info: KMM372F3200AK2 DRAM Module ELECTRONICS KMM372F3200AK2/AS2 & KMM372F3280AK2/AS2 Fast Page with EDO 32Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320 8 0A is a 32M bit x 72 Dynamic RAM high density memory module. The

DC-361

Contextual Info: KMM372V213BK ELECTRONICS DRAM Module KMM372V213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification - KMM372V213BK 2048 cycles/Q2ms, SOJ - KMM372V213BS (2048 cycles/32ms, TSOP) • Fast Page Mode Operation

NJMOP-07

Contextual Info: ULTRA-LOW OFFSET VOLTAGE, LOW DRIFT OPERATIONAL AMPLIFIER NJM0P-07 T he NJM OP-07 is a ultra-low input offset voltage and bias current, low drift and high gain operational am plifier with internal frequency com pensation. The NJM OP-07 is suitable for a high accurated instrum ental amplifier.

Contextual Info: IIN C A rN / / [P ^ IE L O IM K M Ä ^ Y L i n t A B _ TECHNOLOGY ¡¿ u s Low P ow er V id e o D iffe re n c e A m p lifie r October 1992 F€OTUR€S D C S C R IP T IO N • Differential or Single-Ended Gain Block Adjustable 35MHz ■ -3dB Bandwidth, Av = ±10

adc1205

Abstract: adc1225ccd-1
Contextual Info: ADC1205,ADC1225 ADC1205 ADC1225 12-Bit Plus Sign MuP Compatible A/D Converters Literature Number: SNAS537A ADC1205 ADC1225 12-Bit Plus Sign mP Compatible A D Converters General Description Key Specifications The ADC1205 and ADC1225 are CMOS 12-bit plus sign

TAA 691

Contextual Info: KM48V512DJ CMOS DRAM ELECTRONICS 512K X 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time