CSR 57F Search Results

LH28F004SU-LC

Abstract: LH28F008SA 40TSOP
Contextual Info: LH28F004SU-LC FEATURES • 512K x 8 Word Configuration • 5 V Write/Erase Operation 5 V VPP, 3.3 V VCC – No Requirement for DC/DC Converter to Write/Erase • 120 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) • Min. 2.7 V Read Capability – 160 ns Maximum Access Time

CSR application

Abstract: CSR-4 Transistor z1 LH28F004SU-Z1 LH28F008SA CSR34
Contextual Info: LH28F004SU-Z1 FEATURES • 512K x 8 Word Configuration • 5 V Write/Erase Operation 5 V VPP 40-PIN TSOP TOP VIEW A16 1 40 A17 A15 2 39 GND A14 3 38 NC A13 4 37 NC 100 ns Maximum Access Time A12 5 36 A10 32 Independently Lockable Blocks (16K) A11 6 35 DQ7

42-PIN

Abstract: LH28F004SU LH28F004SU-Z9
Contextual Info: LH28F004SU-Z9 FEATURES • 512K x 8 Word Configuration • 2.7 V Write/Erase Operation 5 V ± 0.5 V VPP, 3.0 V ± 0.3 V VCC, +15°C to +35°C – No Requirement For DC/DC Converter To Write/Erase • 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) 4M (512 × 8) Flash Memory

NC80

Abstract: LH28F004SU-NC LH28F008SA 0C000
Contextual Info: LH28F004SU-NC FEATURES • 512K x 8 Word Configuration • 5 V Write/Erase Operation 5 V VPP 40-PIN TSOP TOP VIEW A16 1 40 A17 A15 2 39 GND A14 3 38 NC A13 4 37 NC 80 ns Maximum Access Time A12 5 36 A10 32 Independently Lockable Blocks (16K) A11 6 35 DQ7

LH28F400SUB-Z0

Contextual Info: LH28F400SUB-Z0 FEATURES • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation 5 V VPP, 3.3 V VCC – No Requirement for DC/DC Converter to Write/Erase • 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) 4M (512K x 8, 256K × 16) Flash Memory

56-PIN

Abstract: LH28F400SU-NC NC6016
Contextual Info: LH28F400SU-NC FEATURES • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation 5 V VPP – No Requirement for DC/DC Converter to Write/Erase • 60 ns Maximum Access Time (VCC = 5.0 V ± 0.25 V) • 80ns Maximum Access Time (VCC = 5.0 V ± 0.5 V)

CSR application

Abstract: 56-PIN LH28F400SU-LC 48-pin TSOP 28F400
Contextual Info: LH28F400SU-LC FEATURES • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation 5 V VPP, 3.3 V VCC – No Requirement for DC/DC Converter to Write/Erase • 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) • Minimum 2.7 V Read Capability

NC80

Contextual Info: LH28F004SU-NC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP TOP VIEW • 512K x 8 Word Configuration • 5 V Write/Erase Operation (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase 1» 40 39 □ gnd 38 NC 37 NC 34 ZI DQ6 • 80 ns Maximum Access Time

Contextual Info: SHARP July 1996 / FLASH MEMORY LH28F400SUT-NC80 \ SHARP CORPORATION LHF40S62 # Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited

Contextual Info: FLASH MEMORY LH28F004SUT-NC80 / SHARP CORPORATION LHF04S62 • H a n d le this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.

Contextual Info: V e r . 1.0 SHARP Limited useage of LH28F004SU/ LH28F400SU In the case of 8bit configuration Programmingproblem at command and data We observed som e operation error w hen you write commandand data in following timing. • Same timming of CES High and WE s High

Contextual Info: LH28F004SU-LC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration • 5 V Write/Erase Operation (5 V Vpp; 3.3 V V qq) - No Requirement for DC/DC Converter to Write/Erase • 120 ns Maximum Access Time (Vcc = 3.3 V ± 0.3 V) • Min. 2.7 V Read Capability

Contextual Info: LH28F004SU-Z9 FEATURES 4M 512 x 8 Flash Memory 42-PIN CSP TOP VIEW • 512K x 8 Word Configuration • 2.7 V Write/Erase Operation (5 V ± 0.5 V Vpp, 3.0 V ± 0.3 V V CC, CC’ +15°C to +35°C) - No Requirement For DC/DC Converter To Write/Erase / 1 2 3

Contextual Info: LH28F400SU-NC FEATURES 4M 512K x 8, 256K x 16 Flash Memory 56-PIN TSOP • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase • 60 ns Maximum Access Time (Vcc = 5.0 V ±0.25 V)

Contextual Info: LH28F400SU B-ZO FEATURES • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation 5 V Vpp; 3.3 V Vqq - No Requirement for DC/DC Converter to Write/Erase • 150 ns Maximum Access Time (Vcc = 3.3 V ± 0.3 V) • Min. 2.7 V Read Capability - 160 ns Maximum Access Time

LC124

Contextual Info: LH28F004SU-LC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration TOP VIEW S • 5 V Write/Erase Operation (5 VN/pp, 3.3 V Vc c ) - No Requirement for DC/DC Converter to Write/Erase A-I6 C 1• \ 40 Z I a 17 A-I5 C 2 39 □ A14 IZ

Contextual Info: 1 LHF40S83 L H 2 8 F 4 0 0 S U N -L C 1 2 4 M b it 5 1 2 3 .3 V K b it x 8 , 2 5 6 PAGE C O N T E N T S K b it x 16 (V PP= 5 V ) F l a s h M e m o r y C O N T E N T S PAGE F E A T U R E S . . 1

4S29

Contextual Info: SHARP ìL _ u !y /n v A H Y July 1996 - FLASH MEMORY LH28F004SUB- Z9 \ SHARP CORPORATION LHF04SZ9

Contextual Info: SHARP | SPEC No. E L 0 9 2 1 1 8 I S S U E : February 20 1997 To ; S P E C I F I C A T I O N S Product Type_ 4 M F l a s h M e m o r y _ L H 2 8 F 4 0 0 S U H N —N C 8 0 Mode l No. LHF40S86 ^ T h is sp e c ific a tio n s contains 44 pages including the cover and appendix.

26F004SU

Contextual Info: LH28F400SU-LC FEATURES 4M 512K x 8 ,256K x 16 Flash Memory 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation (5 V Vpp, 3.3 V Vcc) - No Requirement for DC/DC Converter to Write/Erase • 150 ns Maximum Access Time

DT28F016SV80

Abstract: DT28F016SV-80 28F008SA 28F016SA 28F016SV 28F016SV100 29054 28F016SV80
Contextual Info: E PRODUCT PREVIEW EXTENDED TEMPERATURE 28F016SV 16-MBIT 1 MBIT X 16, 2 MBIT X 8 FlashFile MEMORY SmartVoltage Technology  User-Selectable 3.3V or 5V VCC  User-Selectable 5V or 12V VPP 80 ns Access Time 1 Million Erase Cycles per Block 20 MB/sec Burst Write Transfer Rate

297372

Abstract: intel 27123 271305
Contextual Info: AQWADÜK&B ONPOOSDSlAirDOM VS28F016SV, MS28F016SV FlashFile MEMORY • VS28F016SV 40°C to + 125°C — SE2 Grade ■ Configurable x8 or x16 Operation 56-Lead, 0.8mm x 13.5mm SSOP Plastic Package ■ MS28F016SV 55°C to +125°C — QML Certified — SEI Grade

PRW 200

Abstract: sample code read and write flash memory 28F008SA 28F016XD
Contextual Info: E n ADVANCE INFORMATION 28F016XD 16-MBIT 1 MBIT x 16 DRAM-INTERFACE FLASH MEMORY 85 ns Access Time (tRAC)  Supports both Standard and Fast- Page-Mode Accesses n n n n n Multiplexed Address Bus  RAS# and CAS# Control Inputs No-Glue Interface to Many Memory

MS28F016SV85

Contextual Info: in te i VS28F016SV, MS28F016SV 16-Mbit 1-Mbit x 16, 2-Mbit x 8 FlashFile MEMORY VS28F016SV 40°C to + 125°C — QML Certified — SE2 Grade MS28F016SV 55°C to +125°C — QML Certified — SE1 Grade Smart Voltage Technology — User-Selectable 3.3V or 5V Vcc