CS 33 EQUIVALENT Search Results

IC 74HC14 ST MAKE

Abstract: 11801B IN16P AD8150 OC-24 AD8150-EVAL 149W
Contextual Info: 33 x 17, 1.5 Gbps Digital Crosspoint Switch AD8150 FEATURES FUNCTIONAL BLOCK DIAGRAM INP INN CS RE A 7 5 FIRST RANK 17  7-BIT LATCH SECOND RANK 17  7-BIT LATCH INPUT DECODERS D 33 OUTPUT ADDRESS DECODER 33 17 OUTP 33  17 DIFFERENTIAL SWITCH MATRIX

AD8150

Abstract: OC-24 AD8150-EVAL IN20N
Contextual Info: 33 x 17, 1.5 Gbps Digital Crosspoint Switch AD8150 FEATURES FUNCTIONAL BLOCK DIAGRAM INP INN CS RE A 7 5 FIRST RANK 17 × 7-BIT LATCH SECOND RANK 17 × 7-BIT LATCH INPUT DECODERS D 33 OUTPUT ADDRESS DECODER 33 17 OUTP 33 × 17 DIFFERENTIAL SWITCH MATRIX 17

Contextual Info: 33 x 17, 1.5 Gbps Digital Crosspoint Switch AD8150 FEATURES FUNCTIONAL BLOCK DIAGRAM INP INN CS RE A 7 5 FIRST RANK 17 × 7-BIT LATCH SECOND RANK 17 × 7-BIT LATCH INPUT DECODERS D 33 OUTPUT ADDRESS DECODER 33 17 OUTP 33 × 17 DIFFERENTIAL SWITCH MATRIX 17

C3765

Abstract: in23 AD8150-EVAL AD8150 AD8150AST OC-24
Contextual Info: streamª 33 ؋ 17, 1.5 Gbps a FUNCTIONAL BLOCK DIAGRAM CS INP RE INN A 7 5 FIRST RANK 17؋7-BIT LATCH SECOND RANK 17؋7-BIT LATCH INPUT DECODERS 33 D OUTPUT ADDRESS DECODER FEATURES Low Cost 33 ؋ 17, Fully Differential, Nonblocking Array >1.5 Gbps per Port NRZ Data Rate

ECLC

Abstract: AD8151 AD8151AST AD8151-EVAL
Contextual Info: streamª 33 ؋ 17, 3.2 Gb/s a FUNCTIONAL BLOCK DIAGRAM INP INN CS RE 7 5 A WE FIRST RANK 17 ؋ 7-BIT LATCH SECOND RANK 17 ؋ 7-BIT LATCH INPUT DECODERS D 33 OUTPUT ADDRESS DECODER FEATURES Low Cost 33 ؋ 17, Fully Differential, Nonblocking Array 3.2 Gb/s per Port NRZ Data Rate

T08N

Abstract: UT01N t03n n21p UT03N n25p n20p AD8151 T09N N31P
Contextual Info: PRELIMINARY TECHNICAL DATA TM 33 x 17, 3.2Gb/s Digital Crosspoint Switch a s tre a m D 7 A 5 F irst Ran k 1 7 x 7 b it L a tc h Se co n d Ra n k 1 7 x 7 b it L a tc h Input Decoders RE INN CS Output Address Decoder FEATURES Low Cost 33 x 17, Fully Differential, Nonblocking Array

VAC 4097

Abstract: L4097-X004 M915 4097x012 SGV01 l4097 FOR120 STLC5432 STLC5432Q TQFP44
Contextual Info: STLC5432 2Mbit CEPT & PRIMARY RATE CONTROLLER DEVICE PRELIMINARY DATA July 1996 ORDERING NUMBER: STLC5432Q VCCA CS LO1 LO2 DPI P0 LI1 VT LI2 P1 GNDA PIN CONNECTION Top view 44 43 42 41 40 39 38 37 36 35 34 GNDD 1 33 BXDI SA/RESET 2 32 AL0 DIN 3 31 AL1 A/D0

VAC 4097

Abstract: M915 FOR120 STLC5432 STLC5432Q TQFP44 D1529
Contextual Info: STLC5432 2Mbit CEPT & PRIMARY RATE CONTROLLER DEVICE PRELIMINARY DATA July 1996 ORDERING NUMBER: STLC5432Q VCCA CS LO1 LO2 DPI P0 LI1 VT LI2 P1 GNDA PIN CONNECTION Top view 44 43 42 41 40 39 38 37 36 35 34 GNDD 1 33 BXDI SA/RESET 2 32 AL0 DIN 3 31 AL1 A/D0

HC4066

Abstract: BSN20 BSN20 MARKING mosfet yb QT60320 r2r ladder 10 pin 1050C 74HC4066 QT60320C QT60320C-AS
Contextual Info: QT60320C LQ NOT RECOMMENDED FOR NEW DESIGNS 32-KEY QMATRIX CHARGE-TRANSFER IC I2 I3 I4 AIN Vcc X1 Gnd X2 X3 X4 X5 X6 1 44 43 42 41 40 39 38 37 36 35 34 33 X7 X8 RST 2 3 4 32 31 30 CC1 CC2 CS Vcc Gnd 5 6 29 28 Aref AGnd XT2 XT1 RX 7 8 9 27 26 25 Vcc O8 O7

hc4066 st

Abstract: 74HC4066 TLC2272 Electronic Circuit Diagram AMPLIFIER mosfet yb QT60320 r2r ladder 10 pin 1050C HC4066 44R2R QT60320D
Contextual Info: LQ QT60320D 32-KEY QMATRIX CHARGE-TRANSFER IC I2 I3 I4 AIN Vcc X1 Gnd X2 X3 X4 X5 X6 1 44 43 42 41 40 39 38 37 36 35 34 33 X7 X8 RST 2 3 4 32 31 30 CC1 CC2 CS Vcc Gnd 5 6 29 28 Aref AGnd XT2 XT1 RX 7 8 9 27 26 25 Vcc O8 O7 TX O1 QT60320 10 24 11 23 12 13 14 15 16 17 18 19 20 21 22

HC4066

Abstract: mosfet yb QT60320 r2r ladder 10 pin R2R Ladder Resistor Network 1050C 74HC4066 QT60320C QT60320C-AS QT60320C-S
Contextual Info: QMatrix QT60320C 32-KEY QMATRIX™ CHARGE-TRANSFER IC I2 I3 I4 AIN Vcc X1 Gnd X2 X3 X4 X5 X6 X7 X8 1 2 3 44 43 42 41 40 39 38 37 36 35 34 33 32 31 I1 CC1 CC2 RST Vcc 4 5 30 29 CS Aref Gnd XT2 6 7 28 27 AGnd Vcc XT1 RX TX 8 9 10 26 25 24 O8 O7 O6 11 23 12 13 14 15 16 17 18 19 20 21 22

7095 dip

Contextual Info:  PRELIMINARY IDT7M4084 2M x 8 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • High-density 16 megabit 2M x 8 Static RAM module Equivalent to the JEDEC standard for future monolithic Fast access time: 55ns (max.)

Contextual Info: PRELIMINARY IDT7M4084 2M x 8 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • High-density 16 megabit 2M x 8 Static RAM module Equivalent to the JEDEC standard for future monolithic Fast access time: 55ns (max.)

Contextual Info: PRELIMINARY IDT7MB4084 2M x 8 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • High density 16 megabit 2M x 8 static RAM module Equivalent to the JEDEC standard for future monolithic Fast access time: 55ns (max.)

IDT7M4084

Contextual Info: PRELIMINARY IDT7M4084 2M x 8 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • High-density 16 megabit 2M x 8 Static RAM module Equivalent to the JEDEC standard for future monolithic Fast access time: 55ns (max.)

Contextual Info: PRELIMINARY IDT7M4084 2M X 8 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • High-density 16 m egabit 2M x 8 Static RAM module Equivalent to the JE D E C standard for future monolithic Fast access time: 55ns (m ax.)

Contextual Info: ggssx dt) 2M x 8 PRELIMINARY IDT7M4084 CMOS STATIC RAM MODULE Integrated De«k e Technology, Inc. FEATURES: DESCRIPTION: • • • • High-density 16 megabit 2M x 8) Static RAM module Equivalent to the JEDEC standard for future monolithic Fast access time: 55ns (max.)

SG600EX21

Abstract: SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18
Contextual Info: Gate Turn-off Thyristor Cross Reference DS5549 Gate Turn-off Thyristor Cross Reference DS5549-1.1 May 2002 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01

Contextual Info: 4555771 • bôE D SPN jdt 0014474 2M X 8 CMOS STATIC RAM MODULE 15T ■ ID T PRELIMINARY IDT7M4084 INTEGRATED DEVICE Integrated Device Technology» Inc. FEATURES: DESCRIPTION: • • • • High-density 16 megabit 2M x 8) Static RAM module Equivalent to the JEDEC standard for future monolithic

QTAN00

Abstract: QPROX Qtouch QTAN0029 QT11X
Contextual Info: Conversion Issues for QT11x Devices to QT11xA Flash Devices 1. Introduction In order to reduce cost and sustain availability, the following 8-pin QTouch devices have been converted to Flash devices “A” revision : • QT11x • QT11xH • QT1Cxx The newer Flash devices are functionally equivalent to the older devices except that

Contextual Info: 512K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit CMOS static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 17ns max.

Contextual Info: 5 1 2K X 8 Integrated Device Technology, Inc. PRELIMINARY C M O S STATIC R A M M O D U LE nJEZSJoS FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs

Contextual Info: IDT7M4048 IDT7MB4048 512K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 15ns (max.)

Q1932

Contextual Info: 47E D I N T E G R A T E D D E VI CE Bi 4 Ö 2 5 7 7 1 OGlGlSt. T • 512K x 8 CMOS STATIC RAM MODULE IDT PRELIMINARY IDT7M4048 -m -v z -w In teg rated D evice T echnology, Inc* FEATURES: DESCRIPTION: • High density 4 megabit C M O S static RAM module • Equivalent to the J E D E C standard for future monolithic