CS 23 THYRISTOR Search Results

cs-23-08io2

Abstract: TO-208AA 23-16io2
Contextual Info: CS 23 Phase Control Thyristors VRSM VDSM VRRM VDRM V V 900 1300 1700 800 1200 1600 VRRM = 800-1600 V IT RMS = 50 A IT(AV)M = 32 A Type 2 1 TO-208AA (TO-48) 2 3 3 CS 23-08io2 CS 23-12io2 CS 23-16io2 1 M6 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions

TO-208AA

Abstract: 208AA thyristor to48 cs23
Contextual Info: Phase Control Thyristors CS 23 ITRMS = 50 A I TAVM = 32 A VRRM = 800 - 1600 V VRSM VRRM VDSM VDRM V V 900 1300 1700 800 1200 1600 Type 1 2 TO-208AA TO-48 2 3 3 CS 23-08io2 CS 23-12io2 CS 23-16io2 1 M6 Symbol Test Conditions ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine

208AA

Contextual Info: CS 23 Phase Control Thyristors VRSM VDSM VRRM VDRM V V 900 1300 1700 800 1200 1600 VRRM = 800-1600 V IT RMS = 50 A IT(AV)M = 32 A Type 2 1 TO-208AA (TO-48) 2 3 3 CS 23-08io2 CS 23-12io2 CS 23-16io2 1 M6 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions

Contextual Info: CS 23 Phase Control Thyristors VRSM VDSM VRRM VDRM V V 900 1300 1700 800 1200 1600 VRRM = 800-1600 V IT RMS = 50 A IT(AV)M = 32 A Type 2 1 TO-208AA (TO-48) 2 3 3 CS 23-08io2 CS 23-12io2 CS 23-16io2 1 M6 1 = Anode, 2 = Cathode, 3 = Gate Symbol Test Conditions

E113

Abstract: E119 7E17 8IO2 IXYS cs
Contextual Info: Discrete Thyristors Contents Package style Type Page 16 CS 8-.io2 E1-2 19 19 CS19-.ho1 CS 19-.ho1S E1-4 19 CS20-.io1 E1-7 32 CS 23 E1-10 31 CS 30 E1-13 CS 35 E1-16 CS45-.Î01 CS45-.Î01R new E1-19 100 CS 72 E1-22 164 CS 142 E1-24 380 CS300 E1-26

SCR 2146

Abstract: 72-12io8 cs 45-12IO1 scr 2032 IGD 001 tg-500 IXYS SCR Gate Drive CS 45-16io1R 300-12io3 CS thyristor cs 3-06
Contextual Info: Discrete Thyristors Contents 2 1 Type Page 1800 1600 1400 A VRRM/VDRM V 1200 IT(AV)M 800 Package style 1 16 ● ● CS 8-.io2 E1-2 2 3 19 19 ● ● ● ● CS 19-.ho1 CS 19-.ho1S E1-4 4 19 CS 20-.io1 E1-7 1 32 ● CS 23 E1-10 4 31 ● ● ● CS 30

IGD 001

Contextual Info: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 29-08io1C CS 29-12io1C G Isolated back surface*

IXYS SCR Gate Drive

Contextual Info: CS 29 ADVANCE TECHNICAL INFORMATION VRRM IT RMS IT(AV)M Phase Control Thyristor ISOPLUS220TM = 800 - 1200 V = 35 A = 23 A Electrically Isolated Back Surface VRSM VDSM VRRM VDRM V V 800 1200 ISOPLUS220TM Type A C 1 2 800 1200 CS 29-08io1C CS 29-12io1C 3 G

Contextual Info: CS 29 VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A Phase Control Thyristor ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS220TM Type A C CS 29-08io1C CS 29-12io1C 1 G 2 3 Isolated back surface*

Contextual Info: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 29-08io1C CS 29-12io1C G C A G Isolated back surface*

Contextual Info: CS 29 Phase Control Thyristor VRRM = 800/1200 V IT RMS = 35 A IT(AV)M = 23 A ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 ISOPLUS 220TM Type A 800 1200 C CS 29-08io1C CS 29-12io1C G TVJ = TVJM TC = 95°C; 180° sine (IT(RMS) current limit)

mq137

Abstract: csf369 CSF499 00Q0 CS 661
Contextual Info: I X Y S CORP 1ÖE D • 4hñb22b 00Q0 7 7 S 7 ■ Line Commutated Thyristors o o o o • • • /VRFm V o o o o CM CO V- T“ • • Itav 1400 200 Version 1 008 Type o o <o T— CS 5 2.3 CS 8 2.3 C S 16 C S 23 C S 35 C S 52 2.3 2.3 4 1,8 25 60 50 C S 72

cs23-12io2

Abstract: CS23
Contextual Info: □ CS 23 vRRM Phase Control Thyristors V RSM VRRM V DSM VDRM V V 900 1300 1700 ^T RMS ^T<AV)M T(vJ) _ T (vj)m T case = 85°C; 180° sine Tease = 69°C; 180° sine Maximum Ratings ^TSM Tw) = 4 5 °c ; V R= 0 50 25 32 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

ABB ACS 800

Abstract: abb cs 400 130016 cs 730 abb acs 150 CS 370 thyristor CS thyristor cs 6 CS thyristor cs 5-10 44108 130232
Contextual Info: S E A A3 BROWN/ABB SEMICON Vdrm Vrrm •trms V A tavi ^Tc * Typ/type 0040300 0000175 7 T -Z 5 -Q Phase control thyristors Netzthyristoren Thyristor » " I A/°C Itavm Tc = 85° C hrsM O vjm 8,3 ms 10 ms A A A Vr ft h" 10 ms) Tvj=45°c tvjm DRM Irrm ( %

ABB ACS 800

Abstract: thyristor cs 1702-38 cs 1000-16 ASEA Brown din 5480 CS 601 thyristor CS 1001-25 abb thyristor 170242 CS 370 thyristor
Contextual Info: S E A A3 BROWN/ABB SEMICON Vdrm Vrrm •trms V A tavi ^Tc * Typ/type 0040300 0000175 7 T -Z 5 -Q Phase control thyristors Netzthyristoren Thyristor » " I A/°C Itavm Tc = 85° C hrsM O vjm 8,3 ms 10 ms A A A Vr ft h" 10 ms) Tvj=45°c tvjm DRM Irrm ( %

A2529

Abstract: CS 8-12 10MSA
Contextual Info: Thyristors, SCRs S C R = Silicon Controlled Rectifier Phase Control Thyristors Thyristors are very rugged devices. Compared to all oth e r co ntro lle d sem i-co n d uctor components, they feature the highest current capacity per chip area, especially at high

cs 23-12

Abstract: scr 2308 CS 8-12 10MSA
Contextual Info: , Thyristors SCRs SCR = Silicon Controlled Rectifier Phase Control Thyristors Thyristors are very rugged devices. Compared to all other semiconductor components, they feature the highest current capacity per chip area, espe­ cially at high voltage. They are mainly

T 4512 H diode

Abstract: diode T 4512 H cs 23-12 cs 45-12 iol
Contextual Info: , Thyristors SCRs SC R = Silicon Controlled Rectifier Phase Control Thyristors {S C R = S ilic o n C o n tro lle d R e c tifie r) Thyristo rs are v e ry rugged devices. C o m p a re d to all o ther controlled se m ico n d u cto r com pone nts, they featu re

CS 8-12

Abstract: CS45-08iol CS630 CS2014 CS30-16 CS30-16iol CS45-16 300-12io3 CS1250 cs 35-12
Contextual Info: , Thyristors SCRs Phase Control Thyristors SC R = S ilicon C o ntrolled R ectifier Thyristors are very rugged devices. Compared to all other sem iconductor components, the y feature the highest current capacity per chip area, especially at high voltage. They are mainly used as

CS5 thyristor

Abstract: CS 23-16 thyristor CS 23-08 thyristor CS 23-06 thyristor CS 110 thyristor CS 23-04 thyristor CS thyristor cs 6-06 cs 16-12 cs 6-06 CS thyristor cs 6
Contextual Info: Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lf ic Itavm 85°C r Typ/type CS 0,8-02 do CS 0,8-04 do CS 0,8-06 do CS 0,8-07 do CS 0,8-08 do CS CS CS CS CS 3-02 3-04 3-06 3-07 3-08 do do do do do 2 2 2 \ bzw. 2 2 r 2 21 bzw.

CS thyristor cs 6-06

Abstract: CS 23-16 thyristor CS5 thyristor CS 23-06 thyristor CS thyristor cs 3-04 CS thyristor cs 6 CS 23-04 thyristor CS thyristor cs 3-06 cs 8-12 Thyristor CS 23-08 thyristor
Contextual Info: A S E A BROUN/ABB "ai SEMICON GOMöBDö □ O D O lb 'T irjT ' Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lfic Itavm Tc = 85°C r Typ/type A/°C It s m n \H 8,3 ms 10 ms A ¡T 10 ms (Tvjm ) Tvj=45°C tvjm A!s fifis Idrm

Contextual Info: A S E A BROUN/ABB "ai SEMICON GOMöBDö □ O D O lb 'T irjT ' Netzthyristoren Thyristor Phase control thyristors Vdrm Vrrm Itrms V A T A V lfic Itavm Tc = 85°C r Typ/type A/°C It s m n \H 8,3 ms 10 ms A ¡T 10 ms (Tvjm ) Tvj=45°C tvjm A!s fifis Idrm

IGCT thyristor ABB

Abstract: high power igct abb
Contextual Info: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4510 Doc. No. 5SYA1230-02 March 05 • High snubberless turn-off rating • Optimized for medium frequency (<1kHz) and

IGCT thyristor ABB

Abstract: IGCT
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 5500 1800 18x103 1.9 0.9 3300 V A A V m V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020 Doc. No. 5SYA1250-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency