Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CRCW120610R0JNEA Search Results

    SF Impression Pixel

    CRCW120610R0JNEA Price and Stock

    Vishay Dale CRCW120610R0JNEAHP

    RES SMD 10 OHM 5% 3/4W 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CRCW120610R0JNEAHP Digi-Reel 171,952 1
    • 1 $0.22
    • 10 $0.113
    • 100 $0.0661
    • 1000 $0.04554
    • 10000 $0.04554
    		Buy Now
    CRCW120610R0JNEAHP Cut Tape 171,952 1
    • 1 $0.22
    • 10 $0.113
    • 100 $0.0661
    • 1000 $0.04554
    • 10000 $0.04554
    		Buy Now
    CRCW120610R0JNEAHP Reel 170,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.035
    		Buy Now

    Vishay Dale CRCW120610R0JNEAC

    RES SMD 10 OHM 5% 1/4W 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CRCW120610R0JNEAC Digi-Reel 58,816 1
    • 1 $0.1
    • 10 $0.044
    • 100 $0.0229
    • 1000 $0.0136
    • 10000 $0.0136
    		Buy Now
    CRCW120610R0JNEAC Cut Tape 58,816 1
    • 1 $0.1
    • 10 $0.044
    • 100 $0.0229
    • 1000 $0.0136
    • 10000 $0.0136
    		Buy Now
    CRCW120610R0JNEAC Reel 55,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.00759
    		Buy Now

    Vishay Dale CRCW120610R0JNEA

    RES SMD 10 OHM 5% 1/4W 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CRCW120610R0JNEA Cut Tape 38,622 1
    • 1 $0.1
    • 10 $0.046
    • 100 $0.0241
    • 1000 $0.01439
    • 10000 $0.01439
    		Buy Now
    CRCW120610R0JNEA Digi-Reel 38,622 1
    • 1 $0.1
    • 10 $0.046
    • 100 $0.0241
    • 1000 $0.01439
    • 10000 $0.01439
    		Buy Now
    CRCW120610R0JNEA Reel 35,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.00759
    		Buy Now
    RS CRCW120610R0JNEA Bulk 15,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    CRCW120610R0JNEA Bulk 15,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components CRCW120610R0JNEA 9,139
    • 1 $0.0352
    • 10 $0.0352
    • 100 $0.0352
    • 1000 $0.0132
    • 10000 $0.0066
    		Buy Now
    CRCW120610R0JNEA 2,160
    • 1 $1
    • 10 $1
    • 100 $1
    • 1000 $0.3
    • 10000 $0.2
    		Buy Now

    Vishay Dale CRCW120610R0JNEAIF

    RES SMD 10 OHM 5% 1/4W 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CRCW120610R0JNEAIF Digi-Reel 6,485 1
    • 1 $0.45
    • 10 $0.257
    • 100 $0.1684
    • 1000 $0.12741
    • 10000 $0.12741
    		Buy Now
    CRCW120610R0JNEAIF Cut Tape 6,485 1
    • 1 $0.45
    • 10 $0.257
    • 100 $0.1684
    • 1000 $0.12741
    • 10000 $0.12741
    		Buy Now
    CRCW120610R0JNEAIF Reel 5,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.09956
    		Buy Now
    RS CRCW120610R0JNEAIF Bulk 25
    • 1 -
    • 10 -
    • 100 $0.083
    • 1000 $0.083
    • 10000 $0.083
    		Get Quote

    Vishay Intertechnologies CRCW120610R0JNEA

    D25/CRCW1206 200 10R 5% ET1 e3 - Tape and Reel (Alt: CRCW120610R0JNEA)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas CRCW120610R0JNEA Reel 15,000 12 Weeks 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.00495
    		Buy Now
    CRCW120610R0JNEA Reel 13 Weeks, 3 Days 5,000
    • 1 $0.01
    • 10 $0.01
    • 100 $0.01
    • 1000 $0.01
    • 10000 $0.008
    		Buy Now
    CRCW120610R0JNEA Ammo Pack 13 Weeks, 3 Days 1
    • 1 $0.1
    • 10 $0.1
    • 100 $0.017
    • 1000 $0.017
    • 10000 $0.017
    		Buy Now
    Mouser Electronics CRCW120610R0JNEA 82,612
    • 1 $0.1
    • 10 $0.027
    • 100 $0.017
    • 1000 $0.013
    • 10000 $0.007
    		Buy Now
    Verical CRCW120610R0JNEA 340,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.013
    		Buy Now
    CRCW120610R0JNEA 3,690 1,220
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0131
    		Buy Now
    Arrow Electronics CRCW120610R0JNEA 340,000 12 Weeks 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.013
    		Buy Now
    CRCW120610R0JNEA Cut Strips 3,690 12 Weeks 1
    • 1 $0.057
    • 10 $0.0154
    • 100 $0.0147
    • 1000 $0.0135
    • 10000 $0.0131
    		Buy Now
    Newark CRCW120610R0JNEA Reel 40,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.006
    		Buy Now
    CRCW120610R0JNEA Cut Tape 5,294 1
    • 1 $0.009
    • 10 $0.009
    • 100 $0.009
    • 1000 $0.009
    • 10000 $0.009
    		Buy Now
    Future Electronics CRCW120610R0JNEA Reel 305,000 12 Weeks 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0044
    		Buy Now
    Bristol Electronics CRCW120610R0JNEA 74,664
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components CRCW120610R0JNEA 128,000
    • 1 $0.235
    • 10 $0.235
    • 100 $0.235
    • 1000 $0.235
    • 10000 $0.235
    		Buy Now
    CRCW120610R0JNEA 4,274
    • 1 $0.0352
    • 10 $0.0352
    • 100 $0.0352
    • 1000 $0.0132
    • 10000 $0.0066
    		Buy Now
    CRCW120610R0JNEA 4,024
    • 1 $0.1185
    • 10 $0.1185
    • 100 $0.1185
    • 1000 $0.0395
    • 10000 $0.0237
    		Buy Now
    CRCW120610R0JNEA 3,768
    • 1 $0.075
    • 10 $0.075
    • 100 $0.075
    • 1000 $0.025
    • 10000 $0.0075
    		Buy Now
    TTI CRCW120610R0JNEA Reel 150,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.00572
    		Buy Now
    TME CRCW120610R0JNEA 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0128
    		Get Quote
    Chip 1 Exchange CRCW120610R0JNEA 462
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Avnet Abacus CRCW120610R0JNEA 15 Weeks 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more CRCW120610R0JNEA price and stock on Findchips.com

    CRCW120610R0JNEA Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CRCW120610R0JNEA Vishay RES,FXD,MTL FLM,O 010.00,00.13W,05.0%,1206 Original PDF
    CRCW120610R0JNEAC Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 5% 1/4W 1206 Original PDF
    CRCW120610R0JNEAHP Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 5% 3/4W 1206 Original PDF
    CRCW120610R0JNEAIF Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 10 OHM 5% 1/4W 1206 Original PDF

    CRCW120610R0JNEA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mrfe6vp5600hs

    Abstract: MRFE6VP5600H
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H PDF

    IrL 1540 N

    Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for


    Original     		MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g PDF

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21100H Rev. 1, 3/2011 RF Power Field Effect Transistors MRF8S21100HR3 MRF8S21100HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21100H MRF8S21100HR3 MRF8S21100HSR3 MRF8S21100HR3 PDF

    ON SEMICONDUCTOR J122

    Abstract: J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122
    Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical


    Original     		MRF8HP21130H MRF8HP2113ficers, MRF8HP21130HR3 MRF8HP21130HSR3 MRF8HP21130H ON SEMICONDUCTOR J122 J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.


    Original     		AFT27S006N AFT27S006NT1 PDF

    C3225X7R2A225KT

    Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 C3225X7R2A225KT 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0 PDF

    MRF8S21100HS

    Abstract: MRF8S21100H
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21100H Rev. 1, 3/2011 RF Power Field Effect Transistors MRF8S21100HR3 MRF8S21100HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21100H MRF8S21100HR3 MRF8S21100HSR3 2110-2ers, MRF8S21100HS PDF

    transistor j241

    Abstract: ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9120N Rev. 0, 9/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9120NR3 Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		MRF8S9120N MRF8S9120NR3 transistor j241 ATC100B2R7BT500XT mrf8s9120 AN1955 ATC100B390J ATC100B0R8BT500XT j239 transistor j353 J181 J239 mosfet transistor PDF

    transistor B 764

    Abstract: ATC600F150JT250XT 0051A
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MP055N Rev. 0, 7/2013 RF Power LDMOS Transistors AFT09MP055NR1 AFT09MP055GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from


    Original     		AFT09MP055N AFT09MP055NR1 AFT09MP055GNR1 AFT09MP055NR1 transistor B 764 ATC600F150JT250XT 0051A PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices


    Original     		MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all


    Original     		MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1013H Rev. 0, 7/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.


    Original     		MMRF1013H MMRF1013HR5 MMRF1013HSR5 MMRF1013HR5 PDF

    DVB-T Schematic

    Abstract: LDMOS DVB-T transistors DVB-T acpr MRF6VP3091N mrf6v3090n
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 0, 9/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


    Original     		MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NBR1 MRF6VP3091N DVB-T Schematic LDMOS DVB-T transistors DVB-T acpr mrf6v3090n PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast


    Original     		MRF6VP3091N MRF6VP3091NR1 MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 PDF

    IrL 1540 N

    Abstract: IrL 1540 g AN1955 MRF8S18120HR3 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all


    Original     		MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N IrL 1540 g AN1955 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H PDF

    MRFE6VP61

    Abstract: MRFE6VP 1812sms-39njlc MRFE6VP61K25H J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 3, 10/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25GSR5 MRFE6VP61 MRFE6VP 1812sms-39njlc J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1308H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, aerospace and defense, industrial including laser and plasma exciters ,


    Original     		MMRF1308H MMRF1308HR5 MMRF1308HSR5 7/2014Semiconductor, PDF

    MRFE6VP61K25H

    Abstract: MRFE6VP61K25HR6 AN1955 mrfe6vp61k2 A02TKLC ad255 HSR6 UT141C
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25H AN1955 mrfe6vp61k2 A02TKLC ad255 HSR6 UT141C PDF

    CRCW060333R0FKEA

    Abstract: 70201152 CRCW08054K70FK CRCW0603604RFKEA CRCW08054K70FKEA CRCW08050000Z0EA CRCW06031K62FKEA CRCW08054K99FKEA crcw0603511rfkea CRCW0805330RFK
    Text: 1872-2012.qxp:QuarkCatalogTempNew 9/10/12 2:56 PM Page 1872 INTERCONNECT TEST & MEASUREMENT 23 Thick Film Chip Resistors CRCW Series — Thick Film, Rectangular Chip Resistors RoHS ᭤ Metal Glaze on High Quality Ceramic ᭤ Protective Overglaze ᭤ Solder Contacts on Ni Barrier Layer


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.


    Original     		AFT27S006N AFT27S006NT1 PDF

    TDK Ferrite Balun

    Abstract: FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator MRFE6VP61K25H NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4, 3/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 TDK Ferrite Balun FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5600HR6 MRFE6VP5600HSR6 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 MRFE6VP5600HR6 PDF

    MRF8S21100H

    Abstract: J294 AN1955 MRF8S21100HS J529 MRF8S21100HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21100H Rev. 0, 10/2010 RF Power Field Effect Transistors MRF8S21100HR3 MRF8S21100HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21100H MRF8S21100HR3 MRF8S21100HSR3 MRF8S21100HR3 MRF8S21100H J294 AN1955 MRF8S21100HS J529 MRF8S21100HSR3 PDF