CRCW040250R0F Search Results

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Catalog Datasheet	MFG & Type	Document Tags	PDF
K 1358 fet transistor Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17 Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35003N6A MRFG35003N6AT1 K 1358 fet transistor MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17	PDF
MMTB3906WT1 Abstract: ECSH0GY106R SY88212L TP10 SY88216 apc driver for laser diode 67-1636-1-ND Text: SY88212L Electrical Evaluation Board General Description Features This electrical evaluation board allows for evaluating the performance of the SY88212 laser diode driver while driving passive load. Datasheets and support documentation can be found on Micrel's web site at: www.micrel.com.	Original	SY88212L SY88212 SY88212L M9999-043008-Aauthorized M9999-043008-A MMTB3906WT1 ECSH0GY106R TP10 SY88216 apc driver for laser diode 67-1636-1-ND	PDF
CRCW040210R0F Abstract: ECSH0GY106R SY88216L TP10 Text: SY88216L Electrical Evaluation Board General Description Features This electrical evaluation board allows for evaluating the performance of the SY88216 burst mode laser diode driver while driving passive load. Datasheets and support documentation can be found on	Original	SY88216L SY88216 SY88216L M9999-022108-A CRCW040210R0F ECSH0GY106R TP10	PDF
MRFG35003N6AT1 Abstract: IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118 Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 0, 7/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35003N6A MRFG35003N6AT1 MRFG35003N6AT1 IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35003N6A MRFG35003N6AT1	PDF
Post amplifier Abstract: Mod Jp1 J1-J11 CRCW040250R0F Text: SY88232L and SY88236L Electrical Evaluation Board General Description Features This evaluation board allows for checking the performance of the SY88236L burst mode driver/Post Amplifier and the SY88232L continuous mode laser driver/Post Amplifier while driving passive load.	Original	SY88232L SY88236L SY88236L SY88232L-AL/SY88236L-AL M9999-092509-A Post amplifier Mod Jp1 J1-J11 CRCW040250R0F	PDF
Transistor No C110 Abstract: C1-10 ECSH0GY106R LM4040 LM4041 MMBT3904WT1 SY88422L micrel CRCW04021000F CRCW040250R0F Text: SY88422L Electrical Evaluation Board General Description Features This electrical evaluation board allows for checking the performance of the SY88422L while driving a passive load. Datasheets and support documentation can be found on Micrel's web site at: www.micrel.com.	Original	SY88422L SY88422L M9999-022108-A 40horized Transistor No C110 C1-10 ECSH0GY106R LM4040 LM4041 MMBT3904WT1 micrel CRCW04021000F CRCW040250R0F	PDF
MRFG35003N6AT1 Abstract: ATC100A101 A113 A114 A115 AN1955 C101 JESD22 0841 K 1358 fet transistor Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 1, 11/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35003N6A MRFG35003N6AT1 MRFG35003N6AT1 ATC100A101 A113 A114 A115 AN1955 C101 JESD22 0841 K 1358 fet transistor	PDF