Untitled
Abstract: No abstract text available
Text: Datasheet NVISION Compact CQX 3G/HD/SD Router with Clean and Quiet Switching Audio/video routing innovations that simplify your workflows. The NVISION Compact CQX is a 16x8 router which offers clean and quiet outputs for performing seamless video and audio transitions. The CQX
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CP1602-CQX
GVB-1-0239A-EN-DS
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CQX19
Abstract: 7910E
Text: CQX 19 TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode with Metal Socket Description CQX19 is a high power GaAs infrared emitting diode in a special case, consisting of a solid metal TO–5 header with a molded clear plastic lens. This allows the user to mount the device on a
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CQX19
D-74025
7910E
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CQ 945
Abstract: CQ12B CQ22B CD50A HP4192A ISO-14001 TS-16949 2x70mH
Text: CD & CQ Series CM Interface Chokes for Data and Signal Lines Features • High attenuation over a wide frequency range • Low interwinding and coupling capacitance • Wide inductance range • Excellent quality at extremely competitive price due to high volume production
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ISO-9001
TS-16949
ISO-14001
J-STD-020C
42Vac
50/60Hz)
80Vdc
IEC68-1
CQ 945
CQ12B
CQ22B
CD50A
HP4192A
2x70mH
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Untitled
Abstract: No abstract text available
Text: DM2200 EDRAM 4Mb x 1 Enhanced Dynamic RAM Enhanced Memory Systems Inc. Product Specification Features • ■ ■ 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page Fast 4Mbit DRAM Array for 30ns Access to Any New Page Write Posting Register for 12ns Random Writes and Burst Writes
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DM2200
256-byte
no-wait32)
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Untitled
Abstract: No abstract text available
Text: CD & CQ Series CM Interface Chokes for Data and Signal Lines Features • High attenuation over a wide frequency range • Low interwinding and coupling capacitance • Wide inductance range • Excellent quality at extremely competitive price due to high volume production
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ISO-9001
TS-16949
ISO-14001
J-STD-020C
42Vac
50/60Hz)
80Vdc
IEC68-1
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Untitled
Abstract: No abstract text available
Text: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
D-74025
16-Nov-99
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CQX 88
Abstract: No abstract text available
Text: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
D-74025
20-May-99
CQX 88
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CQX48B
Abstract: No abstract text available
Text: CQX48 Vishay Semiconductors GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
D-74025
16-Nov-99
CQX48B
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CQX 88
Abstract: BPW78 CQX48
Text: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
D-74025
16-Nov-99
CQX 88
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BPW78
Abstract: CQX48
Text: CQX48 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description CQX48 is a standard GaAs infrared emitting diode in a flat sideview plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
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CQX48
CQX48
BPW78
BPW78
D-74025
16-Nov-99
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CQX 13
Abstract: CQX26 CQX27 FMQ2 JV13 CQX25
Text: €1» CQX 25 • CQX 26 • CQX 27 Rot-, grün- und gelbleuchtende Lumineszenzdioden GaAsP und GaP Red, green and yellow Light Emitting Diodes (GaAsP and GaP) Anwendung: Application: Allgemeine Anzeige- und Beleuchtungszwecke General indicating and illumination purposes
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CQX35
Abstract: CQX37 CQX37A 77206 CQX36 Scans-0010326 CQX 35 Anzeige V135PL
Text: <Üüfe> CQX 35 • CQX 36 • CQX 37 V 135 PL Rot-, grün- und gelbleuchtende Lumineszenzdioden (GaAsP und GaP) Red, green and yellow Light Emitting Diodes (GaAsP and GaP) Anwendung: Allgem eine Anzeige- und B eleuchtungszw ecke Application: General indicating and illum ination purposes
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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GU-45
Abstract: A10M
Text: a* i. TELEFUNKEN ELECTRONIC 17E D ^ • fl^OCnb ODOa^OD T ■ ALGG COX 31' • COX 32 , ' “ ■¡rULKFODKlKIM electronic CreativeTechnoktQtes 'j " VI ^ Bicolor-LEDs in hermetically sealed TO 18 case with untinted diffused glass lens i Type Color Technology
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D--10
GU-45
A10M
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smd transistor nm
Abstract: 6 pin TRANSISTOR SMD CODE p Transmissive Optical Sensor 3 pin nm smd transistor SMD Transistor 1f TRANSISTOR 610 smd Photo Modules NM smd transistor NM DUAL IR REFLECTIVE SENSOR telefunken LED
Text: VISHAY Vishay Telefunken Y Vishay Telefunken Type Designation Code Detectors U • T • • • 1 Vishay Telefunken T 1 f Series P = Plastic F = Plastic Filter S = Side View M = SMD Y = Fiber Optic Internal Classification Package Varieties 1f Detector 1r
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Telefunken diode color code
Abstract: TDSG5160 telefunken led display
Text: T em ic TELEFUNKEN Semiconductors Explanation of Technical Data TEMIC light emitting diodes and displays are generally designated in accordance with the TEMIC designation system: TL. = Light emitting diode TD. = Display The following figures show how the components can be identified.
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TDSG5160
TLHR5401AS12.
Telefunken diode color code
TDSG5160
telefunken led display
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Untitled
Abstract: No abstract text available
Text: Tem ic U2791B TELEFUNKEN Semiconductors 100-MHz Quadrature Demodulator Description U2791B silicon monolithic integrated circuit is a quadrature demodulator that is manufactured using TELEFUNKEN’s advanced UHF technology. This demodulator features a frequency range from
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U2791B
100-MHz
U2791B
cycl20
D-74025
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SWITCHING SYSTEMS INTERNATIONAL SQV
Abstract: BUT32 CQX 35
Text: I ^pM TR O N DM2202& DM2212 EDRAM 1Mbx 4 EnhancedDynamic RAM Features I 2 K-bits of 15nsec SRAM Cache Memory I Transparent DRAM Refresh Allowed During Page Reads I On-Chip Cache Hit/Miss Comparator I Hidden DRAM Precharge During Page Reads I Refresh Counter with Dedicated Path to DRAM Array
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15nsec
SWITCHING SYSTEMS INTERNATIONAL SQV
BUT32
CQX 35
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Untitled
Abstract: No abstract text available
Text: DM2200EDRAM 4Mb x 1Enhanced Dynamic RAM F ^ a M T R O N Product Specification Features • ■ ■ ■ 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page 8ns Burst Read Capability Fast 4Mbit DRAM Array for 35ns Access to Any New Page Write Posting Register for 15ns Random Writes and Burst Writes
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DM2200EDRAM
256-byte
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Untitled
Abstract: No abstract text available
Text: H Enhanced DM2200 EDRAM 4Mb x 1 Enhanced Dynamic RAM IVfemoiy Suterns be. Product Specification Features • 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes
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DM2200
256-byte
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Untitled
Abstract: No abstract text available
Text: DM2200EDRAM 4Mb x 1Enhanced Dynamic RAM ^ p M T R O N Preliminary Datasheet Features I On-Chip Cache Hit/Miss Comparator I Transparent DRAM Refresh During Cache Reads I Hidden DRAM Precharge During Cache Reads I Refresh Counter with Dedicated Path to DRAM Array
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DM2200EDRAM
15nsec
35nsec
2200J
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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n channel fet k 1118
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF = 0.9 dB TYP, Ga = 10 dB TYP at f = 12 GHz • 6 PIN SUPER MINIMOLD PACKAGE
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NE429M01
NE429M01
NE429M01-T1
n channel fet k 1118
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Untitled
Abstract: No abstract text available
Text: DM2200EDRAM 4Mb x 1 Enhanced Dynamic RAM r ^ p M T R O N Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ 8ns Burst Read Capability ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes
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DM2200EDRAM
256-byte
DM2200J
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