CPD81 Search Results

Contextual Info: PROCESS CPD81 Schottky Rectifier 5 Amp Schottky Barrier Rectifier Chip PROCESS DETAILS Die Size 72 x 72 MILS Die Thickness 11.8 MILS Base Bonding Pad Area 64 x 64 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER

CPD81

Abstract: CZSH10-40CN CZSH5-40
Contextual Info: PROCESS CPD81 Schottky Rectifier 5 Amp Schottky Barrier Rectifier Chip PROCESS DETAILS Die Size 72.5 x 72.5 MILS Die Thickness 11.8 MILS Anode Bonding Pad Area 63.8 x 63.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY

Contextual Info: Central' CMSH5-20 CMSH5-40 CMSH5-60 CMSH5-100 Semiconductor Corp. FEATURES: HIGH DENSITY SCHOTTKY BARRIER RECTIFIER 5.0 AMP, 20 THRU 100 VOLTS • LOW COST • SUPERIOR LOT TO LOT CONSISTENCY • HIGH RELIABILITY HIGH DENSITY • "C" BEND CONSTRUCTION PROVIDES STRAIN

sot-223 code marking

Contextual Info: Central CZSH5-40 Semiconductor Corp. SURFACE MOUNT SILICON SCHOTTKY BARRIER RECTIFIER 5.0 AMP, 40 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 5.0 Amp, SOT-223 surface mount Silicon Schottky Rectifier, is designed for use in all types of com­ mercial, industrial, entertainment, computer and

CPD81

Abstract: CS340L
Contextual Info: NEW! UPGRADED 4 .0 AM P VE R S IO N Central" CMSH3-20L CMSH3-40L Semiconductor Corp. SURFACE MOUNT LOW FORWARD VOLTAGE SILICON SCHOTTKY BARRIER RECTIFIER 4.0 AMP, 20 AND 40 VOLTS FEATURES: • New Upgraded 4.0 Amp Average Forward Current Upgraded from 3.0 Amps

CSI021

Abstract: cm15 jv capacitor LT 5216 153 SP-J BV EI 301 0546 fl016 052416 dm 0565 TA3M 100P6S-A
Contextual Info: <* ^>0^ Tentative Specifications REV.A ^ _ . . r . e s c r ip tio n . Mitsubishi microcomputers Specifications in this manual are tentative and subject to change. M 3 0 2 1 8 G r O lip SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Description The M30218 group of single-chip microcomputers are built using the high-performance silicon gate CMOS

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

UJT 2n3904

Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Contextual Info: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Contextual Info: Central CZSH10-40CN SURFACE MOUNT DUAL, COMMON CATHODE SILICON SCHOTTKY POWER RECTIFIER 10 AMP, 40 VOLTS Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZSH10-40CN ia a dual common cathode 10 Amp surface mount sil­ icon Schottky rectifier package in a SOT-223C case.