2N1595
Abstract: 2N1599 2N1596
Text: COMSET SEMICONDUCTORS 2N1595 thru 2N1599 SILICON THYRISTOR Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit applications. Current handling capability of 1.6 amperes at junction temperetures to 125°C
|
Original
|
PDF
|
2N1595
2N1599
2N1595
2N1596
2N1597
2N1598
2N1599
2N1596
|
VOLTAGE-60
Abstract: No abstract text available
Text: COMSET SEMICONDUCTORS 2N2322 thru 2N2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits MAXIMUM RATINGS * TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NON-REP)
|
Original
|
PDF
|
2N2322
2N2326
2N2322
2N2323
VOLTAGE-60
|
2N3055
Abstract: 2n3055 pin
Text: COMSET SEMICONDUCTORS 2N3055 POWER LINEAR AND SWITCHING APPLICATIONS The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
|
Original
|
PDF
|
2N3055
2n3055 pin
|
MJ1000
Abstract: MJ900 MJ901 mj1001 ic 901 adc 515 Comset
Text: COMSET SEMICONDUCTORS MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS TO-3 The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and
|
Original
|
PDF
|
MJ900/901/1000/1001
MJ900,
MJ901,
MJ1000
MJ1001
MJ900
MJ900
MJ901
ic 901
adc 515
Comset
|
Triac
Abstract: BTB04-600SL
Text: SEMICONDUCTORS BTB04-600SL STANDARD TRIACS FEATURE The BTB04-600SL 4Q TRIAC is intended for general purpose applications where high surge current capability is required, such as lighting, corded power tools, industrial. This TRIAC features a gate current capability
|
Original
|
PDF
|
BTB04-600SL
BTB04-600SL
Triac
|
BDX33C
Abstract: BDX34C BDX33 bdx33c datasheet BDX34A BDX34 BDX33A BDX33B BDX34B SILICON COMPLEMENTARY transistors darlington
Text: NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO220 plastic package.
|
Original
|
PDF
|
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
BDX33B,
BDX33B
BDX33C
BDX34C
BDX33
bdx33c datasheet
BDX34A
BDX34
BDX33A
BDX34B
SILICON COMPLEMENTARY transistors darlington
|
MJ4035
Abstract: mj4032 MJ4032 equivalent MJ4033 MJ4032 TO3 COMSET SEMICONDUCTORS MJ4030 MJ4031 MJ4034
Text: MJ4030 – MJ4031 – MJ4032 PNP MJ4033 – MJ4034 – MJ4035 NPN DARLINGTON MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS For use as output devices in complementary general purpose amplifier applications. • High DC current Gain – hFE=3500 Typ @ IC=10 Adc
|
Original
|
PDF
|
MJ4030
MJ4031
MJ4032
MJ4033
MJ4034
MJ4035
MJ4033/34/35
MJ4032 equivalent
MJ4033
MJ4032 TO3
COMSET SEMICONDUCTORS
MJ4030
MJ4031
MJ4034
|
bd648
Abstract: bd650 bd649 BD652 BD644 BD65 BD643 BD645 BD646 BD647 BD649
Text: BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.
|
Original
|
PDF
|
BD644/646/648/650/652
O-220
BD643,
BD645,
BD647,
BD649
BD651
BD644
BD646
BD648
bd648
bd650 bd649
BD652
BD644
BD65
BD643
BD645
BD646
BD647
|
BDX34 equivalent
Abstract: bdx33c BDX33 BDX33B BDX34 BDX34B BDX34C BDX33A BDX34A
Text: NPN BDX33 – BDX33A – BDX33B – BDX33C PNP BDX34 – BDX34A – BDX34B – BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO220 plastic package.
|
Original
|
PDF
|
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
BDX33B,
BDX33B
BDX34 equivalent
bdx33c
BDX33
BDX34
BDX34B
BDX34C
BDX33A
BDX34A
|
BDX62
Abstract: BDX62B BDX62A BDX62C 62AB
Text: BDX 62, A, B, C PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V
|
Original
|
PDF
|
BDX62
BDX62A
BDX62B
BDX62C
BDX62
BDX62B
BDX62A
BDX62C
62AB
|
BDX62A
Abstract: BDX62B BDX62C BDX62 Fh21e
Text: BDX 62, A, B, C PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V
|
Original
|
PDF
|
BDX62
BDX62A
BDX62B
BDX62C
BDX62A
BDX62B
BDX62C
BDX62
Fh21e
|
BDX64
Abstract: BDX64A BDX64B BDX64C DSA0082168
Text: BDX 64, A, B, C PNP SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V
|
Original
|
PDF
|
BDX64
BDX64A
BDX64B
BDX64C
BDX64
BDX64A
BDX64B
BDX64C
DSA0082168
|
transistor bd650
Abstract: BD648 BD646 BD652 BD644 BD650 IC 651
Text: BD643/645/647/649/651 SILICON NPN DAELINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.
|
Original
|
PDF
|
BD643/645/647/649/651
O-220
BD644,
BD646,
BD648,
BD650
BD652
BD644
BD646
BD648
transistor bd650
BD648
BD646
BD652
BD644
IC 651
|
BD675-BD677-BD679-BD681
Abstract: BD676-BD678-BD680-BD682 bd679 PNP transistor BD679 BD675 BD677 transistor transistor BD677 transistor BD681 BD677 BD681
Text: NPN BD675-BD677-BD679-BD681 PNP BD676-BD678-BD680-BD682 SILICON DARLINGTON POWER TRANSISTORS The BD675-BD677-BD679-BD681 are NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package.
|
Original
|
PDF
|
BD675-BD677-BD679-BD681
BD676-BD678-BD680-BD682
BD675-BD677-BD679-BD681
O-126
BD675
BD677
BD679
BD681
BD676-BD678-BD680-BD682
bd679 PNP transistor
BD679
BD675
BD677 transistor
transistor BD677
transistor BD681
BD677
BD681
|
|
|
2N3792
Abstract: 2N3715 PNP 2N3791 2N3716 2N3713 2N3714 2N3789 2N3790 2N3791
Text: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP
|
Original
|
PDF
|
2N3713/2N3714/2N3715/2N3716
2N3789/2N3790/2N3791/2N3792
2N3713,
2N3714,
2N3715
2N3716
2N3789,
2N3790,
2N3791
2N3792
PNP 2N3791
2N3713
2N3714
2N3789
2N3790
|
2N3716
Abstract: 2N3714 2N3715 2N3713 2n3792 PNP 2N3791 2N3789 2N3790 2N3791 NPN transistor 2n3713
Text: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP
|
Original
|
PDF
|
2N3713/2N3714/2N3715/2N3716
2N3789/2N3790/2N3791/2N3792
2N3713,
2N3714,
2N3715
2N3716
2N3789,
2N3790,
2N3791
2N3792
2N3714
2N3713
PNP 2N3791
2N3789
2N3790
NPN transistor 2n3713
|
BDV65
Abstract: BDV65B transistors BDV65c BDV64A BDV65A BDV65C
Text: BDV65A, B, C NPN SILICON DARLINGTONS POWER TRANSISTORS The BDV65 is epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. The complementary is BDV64A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS
|
Original
|
PDF
|
BDV65A,
BDV65
BDV64A,
BDV65
BDV65A
BDV65B
BDV65C
BDV65B
transistors BDV65c
BDV64A
BDV65A
BDV65C
|
BU2508AF
Abstract: bu2508af equivalent TRANSISTOR BU2508AF
Text: NPN BU2508AF NPN SILICON POWER TRANSISTORS The BU2508AF is silicon power transistor mounted in Jedec TO-3PF plastic package. They are designed for use in horizontal deflection circuits of color TV receivers. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol
|
Original
|
PDF
|
BU2508AF
BU2508AF
O-218)
bu2508af equivalent
TRANSISTOR BU2508AF
|
BDX63
Abstract: BDX63A BDX63B BDX63C
Text: BDX 63, A, B, C NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V
|
Original
|
PDF
|
BDX63
BDX63A
BDX63B
BDX63C
BDX63
BDX63A
BDX63B
BDX63C
|
181T2
Abstract: 182T2 180T2 BDY24 BDY23 BDY25 181T2 B
Text: BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage
|
Original
|
PDF
|
BDY23,
BDY24,
BDY25,
180T2
181T2
182T2
181T2
182T2
180T2
BDY24
BDY23
BDY25
181T2 B
|
BDX66C
Abstract: BDX66B BDX66A BDX66 BDX66 BDX66B C22B BDX66A
Text: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage
|
Original
|
PDF
|
BDX66
BDX66A
BDX66B
BDX66C
BDX66C
BDX66B BDX66A BDX66
BDX66
BDX66B
C22B
BDX66A
|
BD142
Abstract: bd142 equivalent
Text: BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts.
|
Original
|
PDF
|
BD142
BD142
bd142 equivalent
|
BD142
Abstract: Comset Semiconductors
Text: BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts.
|
Original
|
PDF
|
BD142
BD142
Comset Semiconductors
|
BDX66C
Abstract: BDX66B BDX66A BDX66 BDX66B BDX66 BDX66A BDX 66 A
Text: BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCEO Collector-Emitter Voltage -VCBO Collector-Base Voltage -VEBO Emitter-Base Voltage
|
Original
|
PDF
|
BDX66
BDX66A
BDX66B
BDX66C
BDX66C
BDX66B BDX66A BDX66
BDX66B
BDX66
BDX66A
BDX 66 A
|
