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    COMPOUND SEMICONDUCTORS Search Results

    COMPOUND SEMICONDUCTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    COMPOUND SEMICONDUCTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    m2 m2.5 m3 bolt tensile

    Abstract: torque for SELF TAPPING SCREW Crystal washer heatsink TO126 TO126 transistor torque of screw for pcb SOT-82
    Text: Philips Semiconductors Mounting instructions TO126; SOT82 GENERAL DATA AND INSTRUCTIONS Heatsink compound General rules The thermal resistance from mounting base to heatsink Rth mb-h can be reduced by applying a metallic oxide compound between the contact surfaces. Values given


    Original     		PDF

    transistor marking N1

    Abstract: RT1N141 RT3N11M
    Text: RT3N11M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING RT3N11M is compound transistor built with two Unit：mm RT1N141 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.


    Original     		PDF RT3N11M RT3N11M RT1N141 SC-88 JEITASC-88 transistor marking N1

    MPX5050 application note

    Abstract: MPX5000 series pressure sensors
    Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Compound Coefficient Pressure Sensor PSPICE Models AN1660 Prepared by: Warren Schultz PSPICE models for Uncompensated, MPX2000 series, and MPX5000 series pressure sensors are presented here. These models use compound coefficients to improve modeling of


    Original     		PDF MPX2000 MPX5000 ASB200 AN1660 MPX500purchase MPX5050 application note MPX5000 series pressure sensors

    RT3N22M

    Abstract: RT1N241 RT1N* MARKING
    Text: RT3N22M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N22M is compound transistor built with two RT1N241 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.


    Original     		PDF RT3N22M RT3N22M RT1N241 SC-88 JEITASC-88 RT1N* MARKING

    2SC3052

    Abstract: RT3CLLM
    Text: PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3CLLM is a compound transistor built with two Unit：mm 2.1 2SC3052 chips in SC-88 package. 2.0 Each transistor elements are independent.


    Original     		PDF 2SC3052 SC-88 JEITASC-88 RT3CLLM

    RT2N03M

    Abstract: No abstract text available
    Text: RT2N03M COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N03M is a compound transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ , R2=10KΩ


    Original     		PDF RT2N03M RT2N03M SC-88A

    RT2N03M

    Abstract: rt2n03
    Text: RT2N03M COMPOUND TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm 2.1 RT2N03M is a compound transistor with built-in bias resistor 1.25 0.2 FEATURE ●Built-in bias resistor R1=10 KΩ , R2=10KΩ


    Original     		PDF RT2N03M RT2N03M SC-88A rt2n03

    RT1N241

    Abstract: RT3N22M
    Text: RT3N22M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N22M is a compound transistor built with two 2.1 RT1N241 in SC-88 package. 2.0 Each transistor elements are independent. Mini package for easy mounting


    Original     		PDF RT3N22M RT3N22M RT1N241 SC-88 JEITASC-88

    5401 DM smd transistor

    Abstract: 5401 DM 5401 DM transistor High Speed CAN Transceiver IC Philips Siliconix Handbook ISP1123 ISP1123BD ISP1123D ISP1123NB LQFP32
    Text: ISP1123 Universal Serial Bus compound hub Rev. 01 — 5 October 1999 Preliminary specification 1. General description The ISP1123 is a compound Universal Serial Bus USB hub device which complies with USB Specification Rev. 1.1. It integrates a Serial Interface Engine (SIE), hub


    Original     		PDF ISP1123 ISP1123 5401 DM smd transistor 5401 DM 5401 DM transistor High Speed CAN Transceiver IC Philips Siliconix Handbook ISP1123BD ISP1123D ISP1123NB LQFP32

    Untitled

    Abstract: No abstract text available
    Text: Silicone Heat Transfer Compound Page 1 of 1 Silicone Heat Transfer Compound 860 z High thermal conductivity High dielectric constant High dissipation factor Use with heat sinks or metal chassis Will not dry or harden z Contains zincs oxides and polydimenthyl siloxane


    Original     		PDF D-149 860-4G 860-60G 860-150G 860-1P com/products/860

    5401 DM smd transistor

    Abstract: 5401 DM LQFP32 SDIP32 SO32 ISP1123 ISP1123BD ISP1123D ISP1123NB 07387
    Text: ISP1123 Universal Serial Bus compound hub Rev. 02 — 8 August 2000 Product specification 1. General description The ISP1123 is a compound Universal Serial Bus USB hub device which complies with USB Specification Rev. 1.1. It integrates a Serial Interface Engine (SIE), hub


    Original     		PDF ISP1123 ISP1123 5401 DM smd transistor 5401 DM LQFP32 SDIP32 SO32 ISP1123BD ISP1123D ISP1123NB 07387

    GBU1008

    Abstract: DF005S Diodes KBJ6005G
    Text: DCS/PCN-1152 REV02 PRODUCT CHANGE NOTICE Initial Final Contact Date: Implementation Date: Alert Category: Alert Type: October 22, 2009 January 20, 2010 Discrete Semiconductors Additional Manufacturing Location / Mold Compound Change PCN #: PCN #: 1152 REV02*


    Original     		PDF DCS/PCN-1152 REV02 REV02* F1504M DF08S GBJ1504-F GBU404 KBJ604G KBP204G DF1506M GBU1008 DF005S Diodes KBJ6005G

    Filtronic

    Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
    Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15


    Original     		PDF FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500

    Physics and Technology

    Abstract: physics pn junction diode structure
    Text: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors


    Original     		PDF 06-Oct-14 Physics and Technology physics pn junction diode structure

    shinetsu G746 rohs

    Abstract: shinetsu G746 G746 rohs G746 shinetsu G746 H11S H46S AN-GEN-042-B shinetsu Dented
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-042-B for RoHS compliance products Date : 14th Dec. 2007 Prepared : Y.Tanaka Confirmed : T.Okawa SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING METHOD for RA series RoHS COMPLIANCE PRODUCTS


    Original     		PDF AN-GEN-042-B shinetsu G746 rohs shinetsu G746 G746 rohs G746 shinetsu G746 H11S H46S AN-GEN-042-B shinetsu Dented

    shinetsu G746

    Abstract: shinetsu G746 shinetsu G746
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-001-B Date : 23th Dec. 1998 Rev.date : Prepared :K.Kajiwara 22th.Jun. 2010 Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Characteristics for Thermal Silicon Compound


    Original     		PDF AN-GEN-001-B 25deg 6x10E-3 2x10E14 150deg shinetsu G746 shinetsu G746 shinetsu G746

    H11S

    Abstract: G746 shinetsu H46S G746 shinetsu G746 g-746 shinetsu G746 rohs
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-042-C Date : 14th Dec. 2007 Rev.date : 7th Jan. 2010 Prepared : Y.Tanaka Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING


    Original     		PDF AN-GEN-042-C H11S G746 shinetsu H46S G746 shinetsu G746 g-746 shinetsu G746 rohs

    Crack Formation in Interconnect Metallization

    Abstract: No abstract text available
    Text: EXTRA SESSION LATE NEWS April 23, 2012 Boston, Massachusetts Sponsored by JEDEC JC-14.7 Committee on GaAs Reliability and Quality Standards Page 149 This page left blank intentionally. Page 150 > Abstract for Submission to 2012 Reliability of Compound Semiconductors Workshop <


    Original     		PDF JC-14 Crack Formation in Interconnect Metallization

    shinetsu G746

    Abstract: G746 shinetsu shinetsu G746 rohs G746 shinetsu ANGEN001 G746 rohs thermal conductivity shin-etsu shin-etsu Chemical
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-001 Date : 23th Dec. 1998 Prepared :K.Kajiwara Confirmed :T.Ohkawa SUBJECT: Characteristics for Thermal Silicon Compound "ShinEtsu G746". INTRODUCTION: When the RF module is mounted onto a heat sink of a equipment, thermal


    Original     		PDF AN-GEN-001 25deg 6x10E-3 2x10E14 150deg shinetsu G746 G746 shinetsu shinetsu G746 rohs G746 shinetsu ANGEN001 G746 rohs thermal conductivity shin-etsu shin-etsu Chemical

    BAS581-02V

    Abstract: No abstract text available
    Text: BAS581-02V VISHAY Vishay Semiconductors Schottky Diode in SOD-523 Features • These diodes feature very low turn-on voltage and fast switching. • Space saving SOD-523 package 1 1 2 Mechanical Data Case:SOD-523 Plastic Package Molding Compound Flammability Rating:


    Original     		PDF BAS581-02V OD-523 OD-523 BAS581-02V-GS18 BAS581-02V-GS08 D-74025 27-Apr-04 BAS581-02V

    "RCMM" protocol

    Abstract: RCMM Philips ir receiver philips ir receiver transistor H11A 3.3v philips ir demodulator usb transmitter schematic diagram TSOP RECEIVER philips ir receiver IR receiver
    Text: Philips Semiconductors 1 Oct 98 Implementing a USB-to-Infrared Philips RCMM Dongle - USB IR HID Device (OVU1000, Reference Design Ver 1.1) - USB Compound Hub with IR HID Device Author: Wim, Lemay Edited by: Wei Leong, Chui Interconnectivity 1 Oct 98 Page 3


    Original     		PDF OVU1000, OVU1000 PDIUSBH11) PDIUSBD11) "RCMM" protocol RCMM Philips ir receiver philips ir receiver transistor H11A 3.3v philips ir demodulator usb transmitter schematic diagram TSOP RECEIVER philips ir receiver IR receiver

    shinetsu G746

    Abstract: shinetsu G746 rohs G746 shinetsu G746 H11S G746 rohs
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-042-D Date : 14th Dec. 2007 Rev. date : 22th Jun. 2010 Rev.date : 7th Jan. 2010 Prepared : Y.Tanaka Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RECOMMENDATION of THERMAL COMPOUND APPLYING


    Original     		PDF AN-GEN-042-D shinetsu G746 shinetsu G746 rohs G746 shinetsu G746 H11S G746 rohs

    "RCMM" protocol

    Abstract: philips RC-MM xtal 24mhz RCMM Philips TSIP5201 ir transmitter H11A 3.3v xtal 12MHz RC5 Infrared protocol philips PDIUSBD11
    Text: Philips Semiconductors 1 Oct 98 AN10012-01 previous filename: USB-IR_DONGLE.pdf Implementing a USB-to-Infrared (Philips RCMM) Dongle - USB IR HID Device (OVU1000, Reference Design Ver 1.1) - USB Compound Hub with IR HID Device Author: Wim, Lemay Edited by: Wei Leong, Chui


    Original     		PDF AN10012-01 OVU1000, OVU1000 "RCMM" protocol philips RC-MM xtal 24mhz RCMM Philips TSIP5201 ir transmitter H11A 3.3v xtal 12MHz RC5 Infrared protocol philips PDIUSBD11

    S288P

    Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
    Text: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of


    OCR Scan     		PDF