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MACOM CMPA801B030S IC AMP RADAR 7.9GHZ-11GHZ 48QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	CMPA801B030S	Digi-Reel	43		1	1 $913.39 10 $776.477 100 $776.477 1000 $776.477 10000 $776.477	Buy Now
	CMPA801B030S	Cut Tape	43		1	1 $798.31 10 $712.654 100 $712.654 1000 $712.654 10000 $712.654	Buy Now
	CMPA801B030S	Reel			50	1 - 10 - 100 $679.4376 1000 $679.4376 10000 $679.4376	Buy Now
Mouser Electronics	CMPA801B030S					1 - 10 - 100 $748.21 1000 $748.21 10000 $748.21	Get Quote
Richardson RFPD	CMPA801B030S		12		10	1 - 10 $823.46 100 $823.46 1000 $823.46 10000 $823.46	Buy Now
MACOM CMPA801B030F-AMP CMPA801B030F DEVELOPMENT BOARD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA801B030F-AMP	Bulk	1		1	1 $1207.5 10 $1207.5 100 $1207.5 1000 $1207.5 10000 $1207.5	Buy Now
MACOM CMPA801B030F IC RF AMP 8GHZ-11GHZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA801B030F	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
MACOM CMPA801B030P GAN MMIC 30W 28V 8.0-11.0GHZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA801B030P	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
MACOM CMPA801B025F IC RF AMP 8.5GHZ-11GHZ 440208
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA801B025F	Tray			75	1 - 10 - 100 $481.32626 1000 $481.32626 10000 $481.32626	Buy Now

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CMPA80 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CMPA801B025F		Cree/Wolfspeed	RF/IF and RFID - RF Amplifiers - IC RF AMP 8.5GHZ-11GHZ 440208		Original	PDF
CMPA801B025F-AMP		Wolfspeed	CMPA801B025F DEV BOARD WITH HEMT		Original	PDF
CMPA801B025F-TB		Cree/Wolfspeed	RF/IF and RFID - RF Amplifiers - IC RF AMP 8.5GHZ-11GHZ MODULE		Original	PDF
CMPA801B030F		Wolfspeed	GAN MMIC 30W 28V 8.0-11.0GHZ		Original	PDF

CMPA80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F	PDF
Contextual Info: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	CMPA801B025D CMP801B025D CMPA801B025D	PDF
CMPA801B025D Contextual Info: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	CMPA801B025D CMP801B025D CMPA801B025D	PDF
CMPA801B025 Abstract: X-band Internally Matched Power GaN HEMTs Contextual Info: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 X-band Internally Matched Power GaN HEMTs	PDF
Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F	PDF
CMPA801B025D Abstract: CMPA801B025 Contextual Info: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	CMPA801B025D CMP801B025D CMPA801B025D CMPA801B025	PDF
CMPA801B025 Abstract: CMPA801B025F x-band mmic 3.5 DC Jack Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 x-band mmic 3.5 DC Jack	PDF
CMPA801B025F Abstract: CMPA801B025 cree rf 1B025F package 440208 cree rf cmpa801b025f Contextual Info: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 cree rf package 440208 cree rf cmpa801b025f	PDF
CMPA801B025D Contextual Info: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	CMPA801B025D CMP801B025D CMPA801B025D	PDF