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MACOM CMPA801B025F IC RF AMP 8.5GHZ-11GHZ 440208
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA801B025F	Tray			75	1 - 10 - 100 $481.32626 1000 $481.32626 10000 $481.32626	Buy Now
MACOM CMPA801B025F-TB RF & MW AMPLIFIER EVALUATION BOARD/DESIGNER KIT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	CMPA801B025F-TB				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

1B025F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 1B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	PDF	CMPA801B025F CMPA801B025F CMPA80 1B025F
CMPA801B025 Abstract: X-band Internally Matched Power GaN HEMTs Text: 1B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	PDF	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 X-band Internally Matched Power GaN HEMTs
Untitled Abstract: No abstract text available Text: 1B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	PDF	CMPA801B025F CMPA801B025F CMPA80 1B025F
CMPA801B025 Abstract: CMPA801B025F x-band mmic 3.5 DC Jack Text: 1B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	PDF	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 x-band mmic 3.5 DC Jack
CMPA801B025F Abstract: CMPA801B025 cree rf 1B025F package 440208 cree rf cmpa801b025f Text: 1B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	PDF	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 cree rf package 440208 cree rf cmpa801b025f