CMPA55 Search Results

CMPA55 Price and Stock

Filter by Manufacturer


MACOM CMPA5585030F IC RF AMP 5.5GHZ-8.5GHZ 440213
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA5585030F	Tray			1	1 $861.68 10 $861.68 100 $861.68 1000 $861.68 10000 $861.68	Buy Now
Mouser Electronics	CMPA5585030F		56			1 $872.66 10 $872.66 100 $872.66 1000 $872.66 10000 $872.66	Buy Now
Richardson RFPD	CMPA5585030F				1	1 $1134.72 10 $1134.72 100 $1134.72 1000 $1134.72 10000 $1134.72	Buy Now
MACOM CMPA5585030D IC RF AMP GPS 5.5GHZ-8.5GHZ DIE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA5585030D	Tray			10	1 - 10 $997.263 100 $997.263 1000 $997.263 10000 $997.263	Buy Now
Mouser Electronics	CMPA5585030D					1 - 10 $997.27 100 $997.27 1000 $997.27 10000 $997.27	Get Quote
MACOM CMPA5585025F-AMP AMPLIFIER, 5.5-8.5GHZ, CMPA55850
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA5585025F-AMP	Box			2	1 - 10 $1276.44 100 $1276.44 1000 $1276.44 10000 $1276.44	Buy Now
MACOM CMPA5585030F-AMP CMPA5585030F DEV BOARD WITH HEMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA5585030F-AMP	Box			1	1 $1875 10 $1875 100 $1875 1000 $1875 10000 $1875	Buy Now
Richardson RFPD	CMPA5585030F-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Wolfspeed CMPA5585030F RF & Microwave
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	CMPA5585030F		38			1 - 10 - 100 - 1000 - 10000 -	Get Quote

CMPA55 Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CMPA5585025F		Cree	RF Amplifiers, RF/IF and RFID, RF AMP 8.5GHZ MMIC PA		Original	PDF
CMPA5585025F-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, RF AMP 8.5GHZ MMIC PA		Original	PDF
CMPA5585030D		Wolfspeed	IC AMP 5.5GHZ-8.5GHZ 30W		Original	PDF
CMPA5585030F		Cree/Wolfspeed	RF/IF and RFID - RF Amplifiers - IC RF AMP 5.5GHZ-8.5GHZ 440213		Original	PDF
CMPA5585030F-AMP		Wolfspeed	CMPA5585030F DEV BOARD WITH HEMT		Original	PDF
CMPA5585030F-TB		Cree/Wolfspeed	RF/IF and RFID - RF Evaluation and Development Kits, Boards - TEST BOARD		Original	PDF

CMPA55 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
CMPA5585025F Abstract: power transistor gaas x-band CMPA5585025F-TB Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA5585025F CMPA5585025F CMPA55 85025F power transistor gaas x-band CMPA5585025F-TB	PDF
CMPA5585025D Abstract: vd2b Contextual Info: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMP5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	CMPA5585025D CMP5585025D CMPA5585025D vd2b	PDF
CMPA5585025D Contextual Info: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	CMPA5585025D CMPA5585025D 38rolina,	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
Contextual Info: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMP5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	CMPA5585025D CMP5585025D CMPA5585025D	PDF
RF3-50 Abstract: POWER456 Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F RF3-50 POWER456	PDF
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA5585025F CMPA5585025F CMPA55 85025F	PDF
x-Band Hemt Amplifier Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	CMPA5585025F CMPA5585025F CMPA55 85025F x-Band Hemt Amplifier	PDF