CMPA2735075D Search Results
CMPA2735075D Price and Stock
MACOM CMPA2735075D75W, GAN MMIC POWER AMPLIFIER, 2 |
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CMPA2735075D Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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75W, GAN MMIC POWER AMPLIFIER, 2 | Original |
CMPA2735075D Datasheets Context Search
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Contextual Info: CMPA2735075D 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher |
Original |
CMPA2735075D CMPA2735075D | |
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Contextual Info: CMPA2735075D 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher |
Original |
CMPA2735075D CMPA2735075D | |
CMPA2735075DContextual Info: CMPA2735075D 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher |
Original |
CMPA2735075D CMPA2735075D |