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    CMPA0060002F

    Abstract: CMPA0060002F-TB CMPA2560002F
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F CMPA0060002F-TB CMPA2560002F

    CMPA0060025F

    Abstract: CMPA0060025F-TB CMPA2560002F JESD22
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F CMPA0060025F-TB CMPA2560002F JESD22

    CMPA0060002F

    Abstract: cmpa0060002f applications note GaN amplifier CMPA0060002F Tecdia Cree Microwave CMPA0060002F-TB CMPA2560002F Aeroflex GaN power amplifier
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F cmpa0060002f applications note GaN amplifier CMPA0060002F Tecdia Cree Microwave CMPA0060002F-TB CMPA2560002F Aeroflex GaN power amplifier

    TBT-06M20

    Abstract: CMPA0060002F SMF3-12 aeroflex SMF3-12
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F CMPA00 60002F TBT-06M20 SMF3-12 aeroflex SMF3-12

    Untitled

    Abstract: No abstract text available
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F

    Untitled

    Abstract: No abstract text available
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F

    TBTH06M20

    Abstract: CMPA0060025F
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F TBTH06M20

    CMPA0060025F

    Abstract: RF-35-0100-CH CMPA0060025F-TB
    Text: CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F RF-35-0100-CH CMPA0060025F-TB

    TBT-03M1

    Abstract: CMPA0060005F Tecdia Cree Microwave Gan on silicon transistor CMPA0060005F-TB CMPA2560002F
    Text: PRELIMINARY CMPA0060005F 5 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060005F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060005F CMPA0060005F TBT-03M1 Tecdia Cree Microwave Gan on silicon transistor CMPA0060005F-TB CMPA2560002F

    cree

    Abstract: CMPA0060025F Cree Microwave CMPA0060025F-TB CMPA2560002F TBT-H06M20
    Text: PRELIMINARY CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060025F Hz-6000 CMPA0060025F CMPA00 60025F cree Cree Microwave CMPA0060025F-TB CMPA2560002F TBT-H06M20

    CMPA0060002F

    Abstract: Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH
    Text: PRELIMINARY CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F Tecdia CMPA0060002F-TB Cree Microwave CMPA2560002F SMF3-12 RF-35-0100-CH

    CMPA0060002F

    Abstract: CMPA0060002F-TB CMPA2560002F JESD22
    Text: CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060002F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060002F CMPA0060002F CMPA0060002F-TB CMPA2560002F JESD22