AZP94
Abstract: No abstract text available
Text: AZP94 PECL/ECL ÷1, ÷2 Clock Generation Chip with Tristate Compatible Outputs www.azmicrotek.com FEATURES DESCRIPTION • Selectable Divide Ratio • Selectable Enable Polarity and Threshold CMOS or PECL • Tristate Compatible Outputs • Input Buffer Powers Down
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AZP94
AZP94
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J-STD-020B
Abstract: vectron crystal oscillator 275 EG 8010 50MHz 50PPm crystal unit
Text: VCC4 series 1.8, 2.5, 3.3, 5.0 volt CMOS Oscillator Features • CMOS output • Output frequencies to 125 MHz • Low jitter, Fundamental or 3rd OT Crystal • Tristate output for board test and debug • -10/70 or –40/85 °C operating temperature • Gold over nickel contact pads
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1-88-VECTRON-1
1-888-FAX-VECTRON
D-74924,
February14,
J-STD-020B
vectron crystal oscillator 275
EG 8010
50MHz 50PPm crystal unit
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Untitled
Abstract: No abstract text available
Text: VCC4 series 1.8, 2.5, 3.3, 5.0 volt CMOS Oscillator Features • CMOS output • Output frequencies to 125 MHz rd • Low jitter, Fundamental or 3 OT Crystal • Tristate output for board test and debug • -10/70 or –40/85°C operating temperature • Gold over nickel contact pads
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1-88-VECTRON-1
1-888-FAX-VECTRON
D-74924,
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pr 8501 b
Abstract: J-STD-020B
Text: VCC1 series 1.8, 2.5, 3.3, 5.0 volt CMOS Oscillator Features • CMOS output • Output frequencies to 190 MHz • Low jitter, Fundamental or 3rd OT Crystal • Tristate output for board test and debug • -10/70 or –40/85 °C operating temperature • Gold over nickel contact pads
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1-88-VECTRON-1
1-888-FAX-VECTRON
pr 8501 b
J-STD-020B
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CH9267
Abstract: rambus clock generator soic
Text: CH9267 Preliminary CHRONTEL Rambus Clock Generator Features Description • Rambus compatible • On-chip loop filter for clock generation • Built-in power supply conditioning circuitry for low phase jitter • Tristate buffers with output enable • CMOS technology in 8-pin SOIC 150 mil
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CH9267
CH9267
rambus clock generator soic
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XC6200
Abstract: BUF C038 XC6264 xilinx XC6216 PN16 XC6209 XC6216 PW16 XC6000 N16O
Text: XC6200 FPGA Family Advanced Product Description Features • Flexible Pin Configuration - All User I/O’s programmable as in, out, bidirect, tristate or open drain. - Configurable pull-up/down resistors - CMOS or TTL logic levels - 8.32-bit CPU interface
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XC6200
32-bit
220MHz
XC6216
-2PC84C
-40oC
-55oC
125oC
84-Pin
TQ144
BUF C038
XC6264
xilinx XC6216
PN16
XC6209
PW16
XC6000
N16O
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PO22
Abstract: PO-99 PO44 ATL35 PO33 PO55 CMOS GATE ARRAY AO40
Text: PO11 ATL35 CMOS Gate Array cell data sheets 1.0 DESCRIPTION: Tristate output buffer, 2mA drive Truth Table: AO E0 PO11 E0 A0 E0 | P -X | Z 1 | 0 1 1 | 1 P E0 pchn2pad_x1 I1 AO AO gateP gateN outputDRVS1 I3 P I2 nchn2pad_x1 / $Revision: 1.35 $
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ATL35
25degC
PO22
PO-99
PO44
PO33
PO55
CMOS GATE ARRAY
AO40
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Untitled
Abstract: No abstract text available
Text: ISSI IS41LV16100A 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE MAY 2004 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These
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IS41LV16100A
16-MBIT)
IS41LV16100A)
-40oC
IS41LV16100A
16-bit
IS41LV16100A-50K
IS41LV16100A-50T
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Untitled
Abstract: No abstract text available
Text: ISSI IS41LV16100B 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE AUGUST 2004 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These
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IS41LV16100B
16-MBIT)
-40oC
IS41LV16100B
16-bit
IS41LV161
IS41LV16100B-50K
IS41LV16100B-50T
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IS41LV16100B
Abstract: 41LV16100B
Text: ISSI IS41LV16100B 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE DECEMBER 2006 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These
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IS41LV16100B
16-MBIT)
IS41LV16100B
16-bit
41LV16100B
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IS41LV16100B-50TL
Abstract: IS41LV16100B
Text: ISSI IS41LV16100B 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These
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IS41LV16100B
16-MBIT)
IS41LV16100B
16-bit
-40oC
IS41LV16100B-50TL
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IS41LV16105A
Abstract: No abstract text available
Text: ISSI IS41LV16105A 1M x 16 16-MBIT DYNAMIC RAM WITH FAST PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16105A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page
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IS41LV16105A
16-MBIT)
IS41LV16105A
16-bit
32-bit
cycles/16
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IS41C16100
Abstract: 41C16100 IS41LV16100 60tl IS41C16100-50TLI
Text: IS41C16100 IS41LV16100 ISSI 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE December 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.
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IS41C16100
IS41LV16100
16-MBIT)
IS41C16100
IS41LV16100
16-bit
16-bit
32-bit
41C16100
60tl
IS41C16100-50TLI
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K1012
Abstract: No abstract text available
Text: IS41C16100 IS41LV16100 ISSI 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE October 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.
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IS41C16100
IS41LV16100
16-MBIT)
128ms
IS41C16100)
IS41LV16100)
-40oC
IS41LV16100
16-bit
K1012
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IS41C16100
Abstract: IS41LV16100 is41lv16100-60ti
Text: IS41C16100 IS41LV16100 ISSI 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE AUGUST 2001 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.
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IS41C16100
IS41LV16100
16-MBIT)
IS41C16100
IS41LV16100
16-bit
16-bit
32-bit
is41lv16100-60ti
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IS41LV16105B
Abstract: 41LV16105B Trc 1003
Text: ISSI IS41LV16105B 1M x 16 16-MBIT DYNAMIC RAM WITH FAST PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page
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IS41LV16105B
16-MBIT)
IS41LV16105B
16-bit
32-bit
cycles/16
41LV16105B
Trc 1003
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IS41LV16105
Abstract: No abstract text available
Text: ISSI IS41LV16105A 1M x 16 16-MBIT DYNAMIC RAM WITH FAST PAGE MODE AUGUST 2004 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16105A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page
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IS41LV16105A
16-MBIT)
cycles/16
-40oC
IS41LV16105A
16-bit
400-mil
IS41LV16105
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is41lv16100c-50tl
Abstract: IS41LV16100C-50TLI IS41C16100C
Text: IS41C16100C IS41LV16100C 1Mx16 16Mb DRAM WITH EDO PAGE MODE NOVEMBER 2011 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41C/41LV16100C is 1,048,576 x 16-bit highperformance CMOS Dynamic Random Access Memories. These devices offer a cycle access called EDO Page
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IS41C16100C
IS41LV16100C
1Mx16
IS41C/41LV16100C
16-bit
400-mil
IS41LV16100C-50KI
IS41LV16100C-50KLI
is41lv16100c-50tl
IS41LV16100C-50TLI
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IS41C16105
Abstract: IS41LV16105 IS41C16105-50TL N-40A
Text: IS41C16105 IS41LV16105 ISSI 1M x 16 16-MBIT DYNAMIC RAM WITH FAST PAGE MODE DECEMBER 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single
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IS41C16105
IS41LV16105
16-MBIT)
IS41C16105
IS41LV16105
16-bit
32-bit
cycles/16
IS41C16105-50TL
N-40A
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Untitled
Abstract: No abstract text available
Text: IS45C16100 IS45LV16100 ISSI 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE PRELIMINARY INFORMATION OCTOBER 2002 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS45C16100 and IS45LV16100 are 1,048,576 x 16bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called
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IS45C16100
IS45LV16100
16-MBIT)
128ms
IS45C16100)
IS45LV16100)
IS45LV16100
16bit
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circuit diagram of Tri-State Buffer using CMOS
Abstract: verilog code for UART with BIST capability block diagram for UART with BIST capability tri state AT28 vhdl code for flip-flop vhdl pid verilog code pid controller free vhdl code for usart
Text: Features • 0.5 µm Drawn Gate Length 0.45 µm Leff Sea-of-Gates Architecture with • • • • • Triple-level Metal Embedded E2 Memory up to 256 Kb 3.3V Operation with 5.0V Tolerant Input and Output Buffers High-speed, 200 ps Gate Delay, 2-input NAND, FO = 2 Nominal
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10T/100
ATL50/E2
1173D
11/99/1M
circuit diagram of Tri-State Buffer using CMOS
verilog code for UART with BIST capability
block diagram for UART with BIST capability
tri state
AT28
vhdl code for flip-flop
vhdl pid
verilog code pid controller
free vhdl code for usart
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5d 10PIN
Abstract: No abstract text available
Text: ANALOG DEVICES □ FEATURES 100MHz Driver Operation Driver Inhibit Tristate Function Guaranteed Industry Specifications SOD Output Impedance IV/ns Slew Rata Variable Output Voltages for ECL, TTL and CMOS High-Speed Differential Inputs for Maximum Flexibility
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AD345
AD345
100MHz
AD96687
AD394
12-bit
5d 10PIN
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Untitled
Abstract: No abstract text available
Text: MITEL CMOS ST-BUS FAMILY MT8985 Enhanced Digital Switch Features ISSUE 4 256 x 256 channel non-blocking switch Programmable frame integrity for wideband channels Automatic identification of ST-BUS/GCI interface backplanes Per channel tristate control
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MT8985
DIP-40,
PLCC-44
QFP-44
MT8980
MT8985AC
MT8985AE
MT8985AP
MT8985AL
MT8985
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AD345KY
Abstract: AD394 AD96687
Text: ANALOG D EV IC ES □ FEATURES 100MHz Driver Operation Driver Inhibit Tristate Function Guaranteed Industry Specifications 50ft Output Impedance IW ns Slew Rate Variable Output Voltages for ECL, TTL and CMOS High-Speed Differential Inputs for Maximum Flexibility
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AD345
100MHz
AD345
AD96687
AD394
12-bit
50MHz
Signal50ns
AD345KY
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