CD82C85
Abstract: 80C86 80C88 82C85 CS82C85 ID82C85 IS82C85 74HCxx logic table
Text: 82C85 CMOS Static Clock Controller/Generator March 1997 Features Description • Generates the System Clock For CMOS or NMOS Microprocessors and Peripherals The Intersil 82C85 Static CMOS Clock Controller/Generator provides complete control of static CMOS system operating modes and supports full speed, slow, stop-clock and
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82C85
82C85
80C86
80C88
16-bit
82C8s
CD82C85
CS82C85
ID82C85
IS82C85
74HCxx logic table
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level shifter from TTL to CMOS
Abstract: level shifter . CMOS to TTL CD4504BDTR CD4504BKTR voltage level shifter 6kaa CD4504 hex to bin ttl CDFP4-16 "Level Shifter"
Text: CD4504BT Data Sheet July 1999 CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation File Number 4623.1 Features • QML Class T, Per MIL-PRF-38535 Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML
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CD4504BT
MIL-PRF-38535
100kRAD
CD4504BT
level shifter from TTL to CMOS
level shifter . CMOS to TTL
CD4504BDTR
CD4504BKTR
voltage level shifter
6kaa
CD4504
hex to bin ttl
CDFP4-16
"Level Shifter"
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Untitled
Abstract: No abstract text available
Text: FMP3217CCx CMOS LPRAM Document Title 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. 0.0 History Draft date Initial Draft Remark Dec. 10th, 2007 1 Revision 0.0 Dec. 2007 FMP3217CCx CMOS LPRAM 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
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FMP3217CCx
48-FBGA-
FMP3217CCx-FxxX
FMP3217CCx-GxxX
FMP3217CCx-HxxX
FMP3217CC1
FMP3217CC2
25/Typ.
85/Typ.
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Untitled
Abstract: No abstract text available
Text: FMP3217CAx CMOS LPRAM Document Title 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. 0.0 History Draft date Initial Draft Remark Oct,17th, 2007 1 Revision 0.0 Oct. 2007 FMP3217CAx CMOS LPRAM 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
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FMP3217CAx
48-FBGA-6
FMP3217CAx-FxxX
FMP3217CAx-GxxX
FMP3217CAx-HxxX
FMP3217CA1
FMP3217CA2
25/Typ.
85/Typ.
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VSON008X2030
Abstract: U6652
Text: CMOS LDO Regulator Series for Portable Equipments High-speed Load Response Full CMOS LDP Regulators BU6650NUX, BU6651NUX, BU6652NUX, BU6653NUX No.09020EBT06 ●Description BU6650NUX, BU6651NUX, BU6652NUX, BU6653NUX are high-performance 3ch FULL CMOS regulator with 200-mA
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BU6650NUX,
BU6651NUX,
BU6652NUX,
BU6653NUX
09020EBT06
BU6653NUX
200-mA
VSON008X2030
U6652
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Untitled
Abstract: No abstract text available
Text: Datasheet CMOS LDO Regulator for Portable Equipments High Ripple Rejection, Low Current Consumption, Versatile Package FULL CMOS LDO Regulator 500mA BUXXTH5WNVX General Description Key Specifications BUXXTH5WNVX is high-performance FULL CMOS
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500mA)
500-mA
SSON004X1010
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I1-I12
Abstract: PALCE24V10 sl1263
Text: FINAL COM’L: H-15/25 Lattice/Vantis PALCE24V10H-15/25 EE CMOS 28-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Electrically erasable CMOS technology provides reconfigurable logic and full testability ■ High speed CMOS technology
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H-15/25
PALCE24V10H-15/25
28-Pin
15-ns
25-ns
12222F-15
I1-I12
PALCE24V10
sl1263
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Untitled
Abstract: No abstract text available
Text: Datasheet CMOS LDO Regulator for Portable Equipments High Ripple Rejection, Low Current Consumption, Versatile Package FULL CMOS LDO Regulator 2.85V / 500mA BU2JTH5WNVX General Description Key Specifications BU2JTH5WNVX is high-performance FULL CMOS
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500mA)
500-mA
SSON004X1010
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Flashrite
Abstract: amd EPROM Am27C4096 amd pin out EPROM AMD
Text: PROGRAMMING AMD’s CMOS EPROMs PROGRAMMING AMD’s CMOS EPROMs This section contains information on programming AMD CMOS EPROM devices, using AMD’s fast Flashrite programming algorithm. FLASHRITE PROGRAMMING METHODOLOGY AMD EPROMs are shipped from the factory fully
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Am27C400
Am27C4096
Am27C256
Flashrite
amd EPROM
amd pin out
EPROM AMD
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SM-1994
Abstract: No abstract text available
Text: HY62UF16101C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101C uses high performance full CMOS process technology
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HY62UF16101C
64Kx16bit
16bit.
400mil
Voltage2UF16101C
48ball
SM-1994.
SM-1994
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27D014
Abstract: No abstract text available
Text: HM-92570 H A R R IS SEMICONDUCTOR 256K Buffered Synchronous CMOS RAM Module January 1992 Features Description • The HM-92570 is a fully buffered 256K bit CMOS RAM Module con sisting of sixteen HM-6516 2K x 8 CMOS RAMs, two 82C82 CMOS octal latching bus drivers, and two HCT-138 CMOS 3:8 decoders in
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HM-92570
HM-92570
HM-6516
82C82
HCT-138
27D014
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Untitled
Abstract: No abstract text available
Text: CD4504BT Data Sheet July 1999 File Number 4623.1 Features CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation • QM L Class T, Per MIL-PRF-38535 • Radiation Performance Harris’ Satellite Applications Flow SAF devices are fully
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CD4504BT
MIL-PRF-38535
100kRAD
CD4504BT
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: CD4504BT Semiconductor January 1999 Data Sheet CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation File Number Features • QM L Class T, Per MIL-PRF-38535 • Radiation Performance Harris’ Satellite Applications Flow SAF devices are fully
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CD4504BT
MIL-PRF-38535
100kRAD
1-800-4-HARR
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d 65632
Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Text: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products
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Untitled
Abstract: No abstract text available
Text: Preliminary KM68FU1000, KM68FS1000, KM68FR1000 Family CMOS SRAM 128Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION Process Technology : 0.4 um Full CMOS The KM68FU1000, KM68FS1000 and KM68FR1000 Organization : 128K x 8
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KM68FU1000,
KM68FS1000,
KM68FR1000
128Kx8
KM68FU1000
KM68FS1000
32-SOP,
32-TSOP
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Untitled
Abstract: No abstract text available
Text: Preliminary KM68FV2000, KM68FS2000. KM68FR2000 Family CMOS SRAM 256Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION Process Technology : 0.4 um Full CMOS The KM68FV2000, KM68FS2000 and KM68FR2000 Organization : 256K x 8
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KM68FV2000,
KM68FS2000.
KM68FR2000
256Kx8
KM68FV2000
KM68FS2000
32-TSOP
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pal 007a
Abstract: PAL 006A pal 005a pal 003a DIAGRAM pal 005a PAL24V10 Pal programming PALCE24V10 12197-013a
Text: COM’L PALCE24V1 OH-15/25 Advanced Micro Devices EE CMOS 28-Pin Universal Programmable Array Logic D ISTINCTIVE CHARACTERISTICS • ■ Electrically erasable CMOS technology provides reconf igurable logic and full testability High speed CMOS technology -
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ALCE24V1OH-15/25
28-Pin
2197-009A
PALCE24V1OH-15/25
pal 007a
PAL 006A
pal 005a
pal 003a
DIAGRAM pal 005a
PAL24V10
Pal programming
PALCE24V10
12197-013a
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Untitled
Abstract: No abstract text available
Text: COM’L: H-15/25 Advanced Micro Devices PALCE24V1 OH-15/25 EE CMOS 28-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Electrically erasable CMOS technology provides reconfigurable logic and full testability ■ High speed CMOS technology
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H-15/25
PALCE24V1
OH-15/25
28-Pin
15-ns
25-ns
12222F-15
E57S2
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Untitled
Abstract: No abstract text available
Text: Preliminary KM68FU2000, KM68FS2000, KM68FR2000 Family CMOS SRAM 256Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM68FU2000, KM68FS2000 and KM68FR2000 • Organization : 256K x 8
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KM68FU2000,
KM68FS2000,
KM68FR2000
256Kx8
KM68FU2000
KM68FS2000
32-SOP,
32-TSOP
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Untitled
Abstract: No abstract text available
Text: FINAL COM’L: H-15/25 Lattice/Vantis PALCE24V1 OH-15/25 EE CMOS 28-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Electrically erasable CMOS technology provides reconfigurable logic and full testability ■ High speed CMOS technology
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H-15/25
PALCE24V1
OH-15/25
28-Pin
15-ns
25-ns
12222F-15
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5LEC
Abstract: No abstract text available
Text: KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM 64Kx16 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS • Organization : 64K x 16 The KM616FV1000, KM616FS1000 and KM616FR1000 • Power Supply Voltage
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KM616FV1000,
KM616FS1000,
KM616FR1000
64Kx16
KM616FV1000
KM616FS1000
44-TSOP
5LEC
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44TSOP2
Abstract: No abstract text available
Text: KM616FV1000, KM616FS1000, KM616FR1000 Famtly CMOS SRAM 64Kx16 bit Super Low Power and Low Voltage Futt CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4nm Full CMOS • Organization : 64Kx16 bit . Power Supply Voltage KM616FV100Q Family : 3.0V - 3.6V
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KM616FV1000,
KM616FS1000,
KM616FR1000
64Kx16
KM616FV100Q
KM616FS1000
44-TSOP2-400F
44TSOP2
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cs x1 3001 h 05
Abstract: cs X1 3001
Text: KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM 64Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION FEATURES • Process Technology : Full CMOS • Organization : 64Kx16 bit • Power Supply Voltage KM 616FV1000 Family : 3.0V ~ 3.6V
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KM616FV1000,
KM616FS1000,
KM616FR1000
64Kx16
616FV1000
616FS1000
616FR1000
44-TSOP2-400F
616FV1000,
cs x1 3001 h 05
cs X1 3001
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Untitled
Abstract: No abstract text available
Text: KM68FV2000, KM68FS2000, KM68FR2000 Family CMOS SRAM 2S6Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES GENERAL DESCRIPTION . Process Technology : 0.4 miti Full CMOS . Organization : 256Kx8 . Power Supply Voltage The KM68FV2000, KM68FS2000 and KM68FR2000 family is
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KM68FV2000,
KM68FS2000,
KM68FR2000
256Kx8
KM68FV2000
KM68FS2000
32-TSOP1-0820F
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