CMNDM8001 Search Results
CMNDM8001 Price and Stock
Central Semiconductor Corp CMNDM8001-TR-PBFREE100MA 20V SMD MOSFET P-CHANNEL E |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CMNDM8001-TR-PBFREE | Reel | 8,000 |
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Buy Now | ||||||
Central Semiconductor Corp CMNDM8001 TR PBFREETransistor MOSFET P-CH 20V 100mA 5-Pin SOT-953 T/R - Tape and Reel (Alt: CMNDM8001 TR PBFRE) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CMNDM8001 TR PBFREE | Reel | 111 Weeks | 8,000 |
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CMNDM8001 TR PBFREE |
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Central Semiconductor Corp CMNDM8001 TR- Tape and Reel (Alt: CMNDM8001 TR) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CMNDM8001 TR | Reel | 111 Weeks | 8,000 |
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CMNDM8001 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver |
Original |
CMNDM8001 OT-953 100mA 22-August | |
P-channel power mosfet 30V
Abstract: mosfet low vgs marking code bc power mosfet low vgs 10mhz mosfet P-channel MOSFET VGS -25V Vgs 40V mosfet 10mhz mosfet 30V MOSFET LOW VOLTAGE vgS
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CMNDM8001 OT-953 100mA 24-September OT-953 P-channel power mosfet 30V mosfet low vgs marking code bc power mosfet low vgs 10mhz mosfet P-channel MOSFET VGS -25V Vgs 40V mosfet 10mhz mosfet 30V MOSFET LOW VOLTAGE vgS | |
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Contextual Info: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver |
Original |
CMNDM8001 CMNDM8001 OT-953 OT-953 22-August | |
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Contextual Info: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver |
Original |
CMNDM8001 OT-953 OT-953 100mA 25-January | |
marking code BCContextual Info: CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver |
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CMNDM8001 OT-953 35GSSF, 100mA marking code BC | |
CEDM8001VLContextual Info: CEDM8001VL SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001VL is a P-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed |
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CEDM8001VL CEDM8001VL OT-883VL CEDM7001VL 100mW 11-September | |
PB CEDM7001VL 8001VL
Abstract: CEDM7001VL 8001VL
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CEDM7001VL CEDM8001VL OT-883VL 100mA, OT-883VL 21x9x9 PB CEDM7001VL 8001VL CEDM7001VL 8001VL | |
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Contextual Info: PROCESS CP761R Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 14.2 x 14.2 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.94 x 3.94 MILS Source Bonding Pad Area 3.94 x 7.08 MILS Top Side Metalization Al-Si - 35,000Å |
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CP761R CEDM8001 CMNDM8001 |