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Catalog Datasheet	Type	Document Tags	PDF
cm218 Abstract: MCM21 Text: Order this document by CM218165BV/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M X 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh CM218165BV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4^ CMOS high-speed silicon-gate process technology. It includes devices organized as	OCR Scan	MCM218165BV/D CM218165BV cm218 MCM21	PDF

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cm218

Abstract: MCM21
Text: Order this document by CM218165BV/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M X 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh CM218165BV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4^ CMOS high-speed silicon-gate process technology. It includes devices organized as

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MCM218165BV/D CM218165BV cm218 MCM21

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