CLASS E PHEMT GAN Search Results

CLASS E PHEMT GAN Result Highlights (5)

Part	Manufacturer	Description
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

CLASS E PHEMT GAN Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CGY2108GS Abstract: D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2 Text: OMMIC Short Form Catalog 2014 KINGS PARK MMIC products from 500MHz to 160GHz Advanced GaAs, InP, GaN processes Epitaxy services PAGE 4-10 PAGE 13-17 PAGE 14 Foundry and FAB+ services PAGE 15-17 Design Center for state of the art custom MMICs Space Heritage and Space qualification services	Original	500MHz 160GHz CGY2108GS D01GH D01MH CGY2191UH/C2 D01PH ED02AH CGY2190UH/C2	PDF
Untitled Abstract: No abstract text available Text: Design & Manufacturing Excellence Military & Space Solutions Custom Integrated Circuits • Semiconductor device to system level knowledge • Validated device models • Extensive library of proven Analog, Digital & Mixed-Signal ICs and MMICs • Specialty products include: Synthesizers,	Original	AS9100	PDF
space qualified synthesizer Abstract: Hittite RF Switch SOI Wideband Synthesizer ka-band mixer microwave fet IC Hittite Microwave Microwave Generator US Digital MIL-PRF38535 HMC-T2100 Text: Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation Standard & Custom Products, DC to 110 GHz High Reliability Screening for Military & Space Custom Digital, Mixed-Signal & MMIC Solutions Custom MIC Modules & Subsystems Custom Instrumentation	Original	MIL-PRF-38534 MIL-STD-883 space qualified synthesizer Hittite RF Switch SOI Wideband Synthesizer ka-band mixer microwave fet IC Hittite Microwave Microwave Generator US Digital MIL-PRF38535 HMC-T2100	PDF
FPD1500 Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a	Original	FPD1500DFN FPD1500DFN mx750 27dBm 85GHz 42dBm 85GHz) EB1500DFN-BA FPD1500 SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE	PDF
FPD750SOT89 Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky	Original	FPD750SOT89 25dBm 39dBm FPD750SOT89 25mx1500m FPD750SOT89E: FPD750SOT89CE-BC FPD750SOT89CE-BE FPD750SOT89CE-BG BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E	PDF
ap910401 Abstract: mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10 Text: New Products in 2010 New Linear GaN Amplifiers • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at 4.4 to 4.9 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical • Flexible Customization for other Frequency Bands using Hybrid Technology	Original	MGA-444940-02 ap910401 mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10	PDF
FPD1500DFN Abstract: FPD750DFN FPD750SOT89 Text: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a	Original	FPD750DFN FPD750DFN mx750 24dBm 85GHz 39dBm 85GHz) EB750DFN-BA FPD1500DFN FPD750SOT89	PDF
FPD1500DFN Abstract: SSG 23 TRANSISTOR stu 407 FPD1500 FPD750SOT89 w300 STU 390 SSG TRANSISTOR NE 3160 Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features Optimum Technology Matching Applied GaAs HBT 27dBm Output Power P1dB @ 1.85GHz	Original	FPD1500DFN 27dBm 85GHz 42dBm FPD1500DFN mx750 EB1500DFN-BC SSG 23 TRANSISTOR stu 407 FPD1500 FPD750SOT89 w300 STU 390 SSG TRANSISTOR NE 3160	PDF
transistor bc 647 Abstract: No abstract text available Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky	Original	FPD750SOT89 25dBm 39dBm FPD750SOT89 mx1500Î FPD750SOT89E: FPD750SOT89E FPD750SOT89CE EB750SOT89CE-BC transistor bc 647	PDF
pseudomorphic HEMT Abstract: FPD1500SOT89 FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250 Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT RoHS Compliant and Pb-Free Package: SOT89 Product Description Features The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky	Original	FPD2250SOT89 FPD2250SOT8 FPD2250SOT89 25mx1500m 31dBm 44dBm FPD2250SOT89CE EBD2250SOT89CE-AB EBD2250SOT89CE-BB EBD2250SOT89CE-AA pseudomorphic HEMT FPD1500SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250	PDF
FPD1500SOT89 Abstract: FPD2250SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency	Original	FPD2250SOT89 FPD2250SOT8 FPD2250SOT89E: 31dBm 44dBm FPD2250SOT89 25mx1500m FPD2250SOT89E EB2250SOT89CE EB2250SOT89CE-BC FPD1500SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures	PDF
FPD1050SOT89 Abstract: FPD1050SOT89E 941 LG Text: FPD1050SOT89 FPD1050SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features at 2.0GHz The FPD1050SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25 mx1050μm Schottky	Original	FPD1050SOT89 FPD1050SOT8 FPD1050SOT89 25mx1050m 24dBm 37dBm FPD1050SOT89E FPD1050SOT89CE EB1050SOT89CE-BB 85GHzEvaluation FPD1050SOT89E 941 LG	PDF
fpd750sot89e Abstract: Transistor BC 1078 transistor 037J FPD750SOT89ESR TRANSISTOR 8550, SOT89 1608 Size Chip Resistor 122 Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m	Original	FPD750SOT89 FPD750SOT89E FPD750SOT89CE mx1500 25dBm 39dBm FPD750SOT89CE: FPD750SOT89E FPD750SOT89PCK Transistor BC 1078 transistor 037J FPD750SOT89ESR TRANSISTOR 8550, SOT89 1608 Size Chip Resistor 122	PDF
Transistor BC 1078 Abstract: FPD750SOT89 FPD750SOT89CE FPD750SOT89E S 8550 transistor BC 1078 transistor Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm	Original	FPD750SOT89E FPD750SOT89 FPD750SOT89CE 25mx1500m FPD750SOT89CE: FPD750SOT89PCK FPD750SOT89ESQ FPD750SOT89ESR Transistor BC 1078 FPD750SOT89 FPD750SOT89E S 8550 transistor BC 1078 transistor	PDF

0603 footprint IPC Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky	Original	FPD3000SOT89 FPD3000SOT8 30dBm 45dBm FPD3000SOT89 25mx1500m FPD3000SOT89E: FPD3000SOT89CE-BD FPD3000SOT89CE-BE FPD3000SOT89CE-BG 0603 footprint IPC FPD3000 TRANSISTOR BC 157 FPD3000SOT89E	PDF
FPD3000SOT89E Abstract: FPD3000SOT89CE FPD3000SOT89 micro transistor 1203 EB3000SOT89-BC Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky	Original	FPD3000SOT89 FPD3000SOT8 30dBm 45dBm FPD3000SOT89 25mx1500m FPD3000SOT89E: FPD3000SOT89CE EB3000SOT89-BC FPD3000SOT89E FPD3000SOT89CE micro transistor 1203 EB3000SOT89-BC	PDF
pseudomorphic HEMT Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564 Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm	Original	FPD6836SOT343 FPD6836SOT3 OT343 FPD6836SOT343 mx750 1850MHz) 18dBm 2002/95/EC) FPD6836SOT343E FPD6836SOT343E-AG pseudomorphic HEMT TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564	PDF
transistor bc 564 Abstract: bc 5578 0604HQ FPD6836SOT343 OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540 Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive	Original	FPD6836SOT343 FPD6836SOT3 OT343 1850MHz) 2002/95/EC) 18dBm FPD6836SOT343 mx750 FPD6836SOT343E EB6836SOT343CE-BA transistor bc 564 bc 5578 0604HQ OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540	PDF
Transistor BC 1078 Abstract: FPD750SOT89CE FPD750SOT89 TRANSISTOR 8550, SOT89 Text: FPD750SOT89CE FPD750SOT89 CE Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm	Original	FPD750SOT89CE FPD750SOT89 25dBm 39dBm FPD750SOT89CE 25mx1500m FPD750SOT89CE: EB750SOT89CE-BC FPD750SOT89CESR Transistor BC 1078 FPD750SOT89 TRANSISTOR 8550, SOT89	PDF
MPS 808 Abstract: MWT-PH15 WPS-445122-XX mmic code h5 MPS 806 transistor MwT-10 ap910401 GaN amplifier MMA-022028-S7 mps 0820 Text: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical	Original		PDF
FPD750SOT343E Abstract: FPD750 FPD750SOT343 0402CS FPD750SOT343CE toko 1201 Text: FPD750SOT343E FPD750SOT34 3E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive	Original	FPD750SOT343E FPD750SOT34 OT343 1850MHz) 2002/95/EC) 20dBm 37dBm FPD750SOT343CE mx750 FPD750SOT343E FPD750 FPD750SOT343 0402CS toko 1201	PDF
FPD200P70 Abstract: No abstract text available Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.	Original	FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ	PDF
fpd200p70 Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.	Original	FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor	PDF
FPD200P70 Abstract: TL11 TL22 l420 FPD200P70SR Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.	Original	FPD200P70 FPD200P70 25mmx200mm 20dBm 26GHz 15GHz FPD200P70-AJ TL11 TL22 l420 FPD200P70SR	PDF

CLASS E PHEMT GAN Search Results

CLASS E PHEMT GAN Result Highlights (5)

CLASS E PHEMT GAN Datasheets Context Search

CGY2108GS

Untitled

space qualified synthesizer

FPD1500

FPD750SOT89

ap910401

FPD1500DFN

FPD1500DFN

transistor bc 647

pseudomorphic HEMT

FPD1500SOT89

FPD1050SOT89

fpd750sot89e

Transistor BC 1078

0603 footprint IPC

FPD3000SOT89E

pseudomorphic HEMT

transistor bc 564

Transistor BC 1078

MPS 808

FPD750SOT343E

FPD200P70

fpd200p70

FPD200P70