KTX403U
Abstract: marking CK
Text: SEMICONDUCTOR KTX403U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking CK 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark CK KTX403U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs
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KTX403U
KTX403U
marking CK
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3EG7235S-JD3 PRELIMINARY* 256MB - 32Mx72 DDR SDRAM REGISTERED ECC, w/PLL FEATURES Double-data-rate architecture Speeds of 100MHz and 133MHz Bi-directional data strobes DQS Differential clock inputs (CK# & CK)
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W3EG7235S-JD3
256MB
32Mx72
100MHz
133MHz
WED3DG7235S
128Mb
16Mx8
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DDR200
Abstract: DDR266 DDR333 W3EG6464S-AD4
Text: W3EG6464S-AD4 -BD4 White Electronic Designs PRELIMINARY* 512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL FEATURES DESCRIPTION Double-data-rate architecture Speeds of 100MHz, 133MHz and 166MHz Bi-directional data strobes DQS Differential clock inputs (CK & CK#)
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W3EG6464S-AD4
512MB
64Mx64
W3EG6464S
64Mx8
100MHz,
133MHz
166MHz
DDR200
DDR266
DDR333
W3EG6464S-AD4
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Untitled
Abstract: No abstract text available
Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature Double-data rate architecture; two data transfer per clock cycle Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Differential clock inputs (CK and /CK)
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256Mb
NT6DM16M16AD
NT6DM8M32AC
-16Meg
16M16
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hynix lpddr2
Abstract: ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory
Text: 2Gb LPDDR2-S4 SDRAM NT6TL64M32AQ Feature Options Double-data rate architecture; two data transfer per clock cycle Bidirectional, data strobe DQS, /DQS is transmitted/received with data, to be used in capturing data at the receiver Differential clock inputs (CK and /CK)
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NT6TL64M32AQ
-64Meg
64M32
-168-ball
hynix lpddr2
ELPIDA mobile dram LPDDR2
Elpida LPDDR2 Memory
hynix lpddr2 sdram
lpddr2 DQ calibration
Hynix 4Gb LPDDR2
LPDDR2 SDRAM hynix
NT6TL64M32AQ -G1
lpddr2-s2
LPDDR2 1Gb Memory
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CK1CA-145
Abstract: CK1CA-754 MARKING CODE CK2 CK1CA-105 CK1CA-205 CK2CA-105 CK2CA-754 MIL-F-15733 Feed-Thru Filters type pi
Text: Cylindrical Style EMI Filters CK Series – .375 Dia. – Button Hermetically Sealed – Circuits Available – C & L APPLICATIONS The CK series offers effective filtering from 100 KHz to 10 GHz. Glass sealed for hermeticity, this medium profile series is impervious to high moisture, solvents,
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CK1CA-105
Abstract: CK1CA-145 CK1CA-754 CK1CA-205 CK2CA-105 CK2CA-754 MIL-F-15733 CK2AA-105 CK2AA-754
Text: Cylindrical Style EMI Filters CK Series – .375 Dia. – Button Hermetically Sealed – Circuits Available – C & L APPLICATIONS The CK series offers effective filtering from 100 KHz to 10 GHz. Glass sealed for hermeticity, this medium profile series is impervious to high moisture, solvents,
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MIL-STD-220,
CK1CA-105
CK1CA-145
CK1CA-754
CK1CA-205
CK2CA-105
CK2CA-754
MIL-F-15733
CK2AA-105
CK2AA-754
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SK Series
Abstract: SK-12A sk-14d AT4094 sk25b 122m16
Text: Contents Rockers Toggles Keylocks Pushbuttons CK Series .F4 SK Series .F10 SK Series .F16 SK Series .F20
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Untitled
Abstract: No abstract text available
Text: CK 05 - CK 06 TCN 15 - TCN 16 CONDENSATEURS CERAMIQUE MOULES CLASSE 2 7,4 7,4 2,3 5,08 0,6 100 200 100 120 150 180 220 270 330 390 470 560 680 820 101 121 151 181 221 271 331 391 471 561 681 821 102 122 152 182 222 272 332 392 472 562 682 822 103 123 153 183
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Untitled
Abstract: No abstract text available
Text: DP500 Semiconductor PNP Silicon Transistor Description • Suit able for low volt age large current drivers • Excellent h FE Linearity • Com plem ent ary pair wit h DN500 • Switching Application Ordering Information Type N O. Marking Pa ck a ge Code
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DP500
DN500
KST-9091-003
-500m
-150m
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Untitled
Abstract: No abstract text available
Text: 0N UNTERNEHMEN VON Allgemeirve Angaben General Features Roederstein Vielschichtkondensatoren Multilayer capacitors 3. Kennzeichnung / Marking a C K 05, CK 06: Typenbezeichnung / Type designation
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MT28F800
Abstract: No abstract text available
Text: ADVANCE FLASH MEMORY 512Kx16,1 MEGx8 5V/5V, BOOT BLOCK FEATURES • E lev en erase blo ck s: 1 6 K B /8 K -w o rd bo o t blo ck protected T w o 8 K B /4 K -w o rd p a ra m eter b lo ck s Eig ht m ain m em o ry b lo ck s • D eep P ow er-D o w n M ode: 5 jiA M A X
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MT28F800
100ns
512Kx16
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28F400B1
Abstract: TS0P48
Text: PRELIMINARY MICRON MT28F400B1 256K x 16 512K x 8 F L A S H M EM O RY I FLASH MEMORY 256K x 16, 512K x 8 FEATURES PIN ASSIGNMENT Top View 44-Pin SOP • Sev en era se b lo ck s: 1 6 K B /8 K -w o rd b o o t blo ck (p rotected ) T w o 8 K B /4 K -w o rd p a ra m e ter b lo ck s
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MT28F400B1
110ns,
150ns
16-bit
28F400B1
TS0P48
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28f200-bB
Abstract: mt2f2 28F200-T L99 marking T199S
Text: PRELIMINARY M IC R O MT28F200 128K x 16, 256K x 8 FLASH MEMORY N 128K x 16, 256K x 8 FLASH MEMORY FEATURES PIN ASSIGNMENT (Top View • Five erase blocks: 16K B /8 K -w o rd bo o t b lo ck (protected) T w o 8 K B /4 K -w o rd p a ra m e ter b lo ck s T w o m ain m em o ry b lo ck s
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MT28F200
100ns
V/12V,
44-Pin
16-bit
28f200-bB
mt2f2
28F200-T
L99 marking
T199S
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lic policy
Abstract: No abstract text available
Text: REFERENCE DATA KV 1 8 3 5 K S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2. T O K O PART NUMBER 3. APPLICATIONS 4. STR U C T U R E 5. PA CK A GE OU TLINE 6. PIN LAYOUT 7. PA CK A GE O U TL IN E D I M E N S I O N S / SIG N A T U R E Drawn By MARKING
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DB3-J117
lic policy
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT28F400 256K x 16, 512K x 8 FLASH MEMORY |U 1I C = R C 3N FLASH MEMORY 256K x 16, 512K x 8 FEATURES PIN ASSIGNMENT Top View • Sev en erase blocks: - 1 6 K B /8 K -w o rd b oo t b lo ck (p rotected ) - T w o 8 K B /4 K -w o rd p aram eter b lo ck s
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MT28F400
100ns
V/12V,
44-Pin
16-bit
MT28F4O0
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lic policy
Abstract: No abstract text available
Text: REFERENCE DATA K V 1 3 5 1 A - 1 S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2. T O K O PART NUMBER 3. APPLIC ATIO NS 4. STR U CTU RE 5. PA CK A GE OUTLINE 6. PIN LAYOUT 7. PA CK A GE OU TLINE D I M E N S I O N S / SIG N A T U R E MARKING 8. A B S O L U T E MAXIMUM RATINGS
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DB3-J013
lic policy
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MT28
Abstract: MT28SF008
Text: ADVANCE MT28 S F008 1 MEG x 8 FLASH MEMORY FLASH MEMORY 1 MEG x 8 AND 5 V /5 V 3 V S m a rtV o lta g e , BOOT BLOCK FEATURES PIN ASSIGNMENT (Top View) • E leven erase blocks: 16K B bo o t b lo ck (p ro tected ) T w o 8K B p a ra m eter b lo ck s Eight m ain m em ory blocks
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28SF008
28F008
100ns
MT28
MT28SF008
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MT28F002
Abstract: SR50
Text: PRELIMINARY MICRON 1 MT28F002 256K x 8 FLASH MEMORY -• - 256K x 8 I FLASH MEMORY FEATURES • Five erase blocks: 16K B bo o t b lo ck protected T w o 8K B p a ra m eter b lo ck s T w o m ain m em o ry b locks • 5V ±10% V c c; 12V ±5% V pp • A d d ress access tim es: 60n s, 80ns, 100ns
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MT28F002
100ns
V/12V,
40-Pin
SR50
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T28SF400 256K x 16, 512K x 8 FLA S H M EM ORY MICRON 256K x 16, 512K x 8 FLASH MEMORY FEATURES PIN ASSIGNMENT (Top View 44-Pin SOP • Sev en erase b locks: 1 6 K B /8 K -w o rd b o o t b lo ck (p rotected ) T w o 8 K B /4 K -w o rd p a ra m e ter b lo ck s
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T28SF400
100ns
110ns,
150ns
16-bit
MT20SF4OO
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Untitled
Abstract: No abstract text available
Text: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 100 SERIES MINIATURE BLO CK ACCESSO RIES CHANNEL CLAMPS I i SCREW STEEL CHANNEL SNAP-IN MINIATURE FOR #12 CHANNEL SEE-THRU COVER GANGING ROD MINIATURE VINYL MARKING STRIPS ELEVATED MARKING STRIP NYLON HOLDING
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52-BU
LR25557
E63810
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Untitled
Abstract: No abstract text available
Text: R E V 1S I O N S S M P - MS L D - PC R NOTES: I MATERIALS AND FINISHES: BODY - BRASS, G O L D PLATING, .000030 [0.8] TH I CK O V E R C O P P E R C O N T A C T - GOLD, G O L D PLATING, .000030 [0.8] TH I CK O V E R C O P P E R I N S U L A T O R - PEEK OR LCP
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Untitled
Abstract: No abstract text available
Text: CAGE C LA M P " E E x e II Through Term inal B lo ck s, S e rie s 2 8 0 7 F r o n t- e n tr y 15 0 .2 - 2.5 mm2 | A W G 2 4 - 1 2 0 550 V - , 23 A © / . V / r \ \cx/ \ Term inal b lo ck w id th 5 m m / 0 .3 3 in / /E \ 0.197 in i_ 8 - 9 m m * © «6
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Untitled
Abstract: No abstract text available
Text: REFERENCE DATA K V 14 0 5 S P E C I F I C A T I ON TABLE 1. OF CONTENTS PU RPO SE 2 . T O K O PART NUMBER 3 . A PPLIC A T IO N S 4. STR U C T U R E 5. PA CK A G E O U TLIN E 6. PIN LA Y O U T 7. PA CK A G E O U TLIN E D IM E N S IO N S / S IG N A T U R E Drawn By
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oDB3-I125
DB3-I125
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