MT28F002 Search Results

MT28F002B3

Abstract: MT28F200B3
Contextual Info: 2Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B3 MT28F200B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks

Contextual Info: PRELIMINARY FLASH MEMORY MT28F400B1 VET, MT28F800B1 VET, MT28F002B1 VET, MT28F004B1 VET, MT28F008B1 VET Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View • Extended temperature range operation: -40°C to +85°C for Vcc = 3V to 3.6V -25°C to +85°C for Vcc = 2.7V to 3.6V

MT28F002

Abstract: MT28F002B5 MT28F002C5VG-8T MT28F002C5 trs a13
Contextual Info: 2Mb, SMART 5 BIOS-OPTIMIZED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002C5 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks (96KB and 128KB) • Top boot block organization

MT28F002

Abstract: MT28F200B5SG-6B MT28F002B5 MT28F200B5
Contextual Info: 2Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B5 MT28F200B5 5V Only, Dual Supply Smart 5 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks

NOR Flash 1996 protect

Contextual Info: PRELIM IN ARY MT28F002B1 256K x 8 FLASH M EM ORY I^ IC R D N FLASH MEMORY 256K x 8 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8|iA at 5V Vcc; 8|a.A at

cc460

Contextual Info: M i l “ Ö O IS J I 2Mb’ BIOS-OPTIMIZED BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002C1 FEATURES • Five erase blocks: 16KB boot block protected Tw o 8KB param eter blocks Tw o m ain m em ory blocks (96KB and 128KB) • Top boot block organization • Address access time: 80ns

Contextual Info: OBSOLETE 256K x 8 BOOT BLOCK FLASH MEMORY MT28F002B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks • SmartVoltage Technology (SVT): 3.3V ±0.3V or 5V ±10% VCC

Contextual Info: PRELIMINARY MT28F002 2 5 6 K x 8 FLASH MEMORY |U|IC=RON FLASH MEMORY 256K x 8 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB param eter blocks Two m ain m em ory blocks • 5V ±10% Vcc; 12V ±5% V pp • A ddress access times: 60ns, 80ns, 100ns

Contextual Info: PRELIMINARY EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY MICRON I QUANTUM DEVICES, INC. FLASH MEMORY MT28F400B1 VET, MT28F800B1 VET, MT28F002B1 VET, MT28F004B1 VET, MT28F008B1 VET Low Voltage, Extended Temperature FEATURES • Extended temperature range operation:

Contextual Info: •56K x 8 • •1fc ivi O R Y MT28F002B1 FLASH MEMORY FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB param eter blocks Tw o m ain memory blocks • Sm artVoltage Technology (SVT): 3.3V ±0.3V or 5V ±10% V cc

MT28F002

Abstract: SR50
Contextual Info: PRELIMINARY MICRON 1 MT28F002 256K x 8 FLASH MEMORY -• - 256K x 8 I FLASH MEMORY FEATURES • Five erase blocks: 16K B bo o t b lo ck protected T w o 8K B p a ra m eter b lo ck s T w o m ain m em o ry b locks • 5V ±10% V c c; 12V ±5% V pp • A d d ress access tim es: 60n s, 80ns, 100ns

MT28F002B1VG-8 B

Contextual Info: PRELIMINARY MT28F002B1 256K x 8 FLASH MEMORY MICRON U QUANTUM DEVtCEft, INC. FLASH MEMORY 256K x 8 S m artV o ltag e, FEATURES • Five erase blocks: 16KB boot block protected Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8(aA at 5V Vcc; 8|xA at

MT28F002B3

Contextual Info: 256K x 8 SMART 3 BOOT BLOCK FLASH MEMORY MT28F002B3 FLASH MEMORY 3V Only, Dual Supply Smart 3 FEATURES PIN ASSIGNMENT (Top View) • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks • Smart 3 technology (B3):

Contextual Info: OBSOLETE 2Mb, BIOS-OPTIMIZED BOOT BLOCK FLASH MEMORY MT28F002C1 FLASH MEMORY FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks (96KB and 128KB) • Top boot block organization

Contextual Info: PRELIMINARY 2 MEG, BIOS-OPTIMIZED, BOOT BLOCK FLASH MEMORY MICRON I QUANTUM DEVICES, INC. FLASH MEMORY MT28F200C1 MT28F002C1 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks (96KB and 128KB)

MT28F002

Abstract: MT28F002B1B MT28F002B1VG-8T MT28F002B1 8 T
Contextual Info: 256K x 8 BOOT BLOCK FLASH MEMORY MT28F002B1 FLASH MEMORY SMARTVOLTAGE FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks • SmartVoltage Technology (SVT): 3.3V ±0.3V or 5V ±10% VCC

Contextual Info: PRELIMINARY MT28F002 256K x 8 FLASH MEMORY TECHNOLOGY, INC. FLASH MEMORY 256K x 8 5V/12V, BOOT BLOCK FEATURES • Five erase blocks: - 16KB boot block protected - Two 8KB parameter blocks - Two main memory blocks • 5V ±10% VCC; 12V ±5% VPP • Address access times: 60ns, 80ns, 100ns

Contextual Info: 256K x 8 SMART 5 BOOT BLOCK FLASH MEMORY M IC R O N I TECHNOLOGY, INC. MT28F002B5 FLASH MEMORY 5V Only, Dual Supply Smart 5 FEATURES • Five erase blocks: 16KB boot block (protected) Tw o 8KB param eter blocks Tw o m ain m em ory blocks • Sm art 5 technology (B5):

MT28F002

Contextual Info: 2Mb, BIOS-OPTIMIZED BOOT BLOCK FLASH MEMORY MT28F002C1 FLASH MEMORY FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks (96KB and 128KB) • Top boot block organization • Address access time: 80ns

MT28F002C1

Contextual Info: i l l Z R O ;' S-Or>TIMIZED M A .S H ill E M O R Y MT28F200C1 MT28F002C1 FLASH MEMORY FEATURES P IN • Five erase blocks: 16KB/8K-word boot block protected) Two 8KB/4K-word parameter blocks Two main memory blocks (96KB and 128KB) • Top boot block organization

Contextual Info: NEW 2 MEG, BIOS-OPTIMIZED BOOT BLOCK FLASH MEMORY |uiic: r o n FLASH MEMORY BOOT BLOCK FLASH MEMORY FEATURES • Five erase blocks: 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Two main memory blocks (96KB and 128KB) • Top boot block organization

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

HD637B01VOP

Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Contextual Info: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ

Contextual Info: MICRON1 256Kx8 I BOOT BLOCK FLASH MEMORY FLASH MEMORY S m a r tV oltage FEATURES • Five erase blocks: 16KB boot block protected Tw o 8KB param eter blocks Tw o m ain m em ory blocks • Sm artVoltage T echnology (SVT): 3.3V ±0.3 V or 5V ±10% V cc 5V ±10% or 12V ±5% V p p