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    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

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    Untitled

    Abstract: No abstract text available
    Text: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original
    PDF 2N7638-GA 2N7638 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7638-GA

    Untitled

    Abstract: No abstract text available
    Text: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original
    PDF 2N7636-GA 2N7636 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7636-GA

    2n2222 spice model

    Abstract: No abstract text available
    Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original
    PDF 2N7637-GA 2N7637 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7637-GA 2n2222 spice model

    Untitled

    Abstract: No abstract text available
    Text: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original
    PDF 2N7635-GA 2N7635 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7635-GA

    Untitled

    Abstract: No abstract text available
    Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original
    PDF 2N7639-GA 2N7639-GA 8338E-48 0733E-26 2281E-10 33957E-9 20E-03

    diode 0A70

    Abstract: GA05JT01-46
    Text: GA05JT01-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original
    PDF GA05JT01-46 GA05JT01 8338E-48 0733E-26 16E-10 021E-10 050E-2 diode 0A70 GA05JT01-46

    Untitled

    Abstract: No abstract text available
    Text: 2N7640-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch


    Original
    PDF 2N7640-GA 2N7640 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 2N7640-GA

    Untitled

    Abstract: No abstract text available
    Text: GA05JT03-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original
    PDF GA05JT03-46 GA05JT03 8338E-48 0733E-26 16E-10 021E-10 050E-2

    Untitled

    Abstract: No abstract text available
    Text: GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features •         VDS = 600 V RDS ON = 25 mΩ ID (Tc = 25°C) = 100 A hFE (Tc = 25°C) = 105 Package 225°C maximum operating temperature Gate Oxide Free SiC Switch


    Original
    PDF GA50JT06-258 O-258 GA50JT06 00E-47 26E-26 3989E-9 026E-09 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original
    PDF GA50JT12-247 O-247 GA50JT12 833E-48 073E-26 398E-9 026E-09 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch


    Original
    PDF GA20SICP12-263 O-263-7L) Applicatio0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03

    Untitled

    Abstract: No abstract text available
    Text: GA50JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original
    PDF GA50JT17-247 O-247 GA50JT17 833E-48 073E-26 398E-9 026E-09 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original
    PDF GA10SICP12-247 O-247AB 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original
    PDF GA20SICP12-247 O-247AB 0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03

    Untitled

    Abstract: No abstract text available
    Text: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original
    PDF GA16JT17-247 O-247 GA16JT17 833E-48 073E-26 4E-12 014E-09 500E-3

    Untitled

    Abstract: No abstract text available
    Text: GA10JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original
    PDF GA10JT12-263 O-263-7L) GA10JT12 833E-48 073E-26 39E-12 1373E-12

    Untitled

    Abstract: No abstract text available
    Text: GA20JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original
    PDF GA20JT12-263 O-263-7L) GA20JT12 833E-48 073E-26 4E-12 014E-09 500E-3

    Untitled

    Abstract: No abstract text available
    Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original
    PDF GA04JT17-247 O-247 GA04JT17 8338E-48 0733E-26 254E-12 0E-1209

    ga10jt12

    Abstract: No abstract text available
    Text: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original
    PDF GA10JT12-247 O-247 GA10JT12 833E-48 073E-26 39E-12 1373E-12

    Untitled

    Abstract: No abstract text available
    Text: GA100JT12-227 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


    Original
    PDF GA100JT12-227 OT-227 GA100JT12-227 GA100JT12 833E-48 073E-26 398E-9

    Untitled

    Abstract: No abstract text available
    Text: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original
    PDF GA05JT12-247 O-247 GA05JT12 8338E-48 0733E-26 254E-12 0E-1209

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES Universal Multichannel Industrial Signal Conditioning ADC PRELIMINARY TECHNICAL DATA AD280 FEATURES Four Input Channels, w ith Protection and Switchable A ttenuation Provision for Cold Junction Sensor Programmable Excitation Sources for RTD M easure­


    OCR Scan
    PDF 18-Bit 44-Lead

    P113E

    Abstract: OP413 equivalent ely 0325
    Text: ANALOG DEVICES Low Noise, Low Drift Single-Supply Operational Amplifiers OP113/OP213/OP413 FEATURES Single- or Dual-Supply Operation Low Noise: 4.7 nV/VHz @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jjiV Very Low Drift: 0.2 jjiV / X Unity Gain Stable


    OCR Scan
    PDF OP113/OP213/OP413 OP113 1805a-0-2/98 P113E OP413 equivalent ely 0325

    AD685

    Abstract: cjc hv capacitor
    Text: ANALOG DEVICES Universal Multichannel Industrial Signal Conditioning ADC PRELIMINARY TECHNICAL DATA AD280 FEATURES Four Input Channels, w ith Protection and Switchable A ttenuation Provision for Cold Junction Sensor Programmable Excitation Sources for RTD M easure­


    OCR Scan
    PDF AD280 18-Bit 280-ED 44-Lead AD685 cjc hv capacitor