CHIP BONDING DIE Search Results

CHIP BONDING DIE Result Highlights (5)

Part	Manufacturer	Description
AM25LS2548DM/R	Rochester Electronics LLC	AM25LS2548 - Chip Select Address Decoder with Acknowledge
P80C592FFA	Rochester Electronics LLC	P80C592 - 8-bit microcontroller with on-chip CAN
9513APC-G	Rochester Electronics LLC	9513A - Rochester Manufactured 9513, System Timing Controller, 44 PLCC Package, Commercial Temp spec.
AM79C971AVC\\W	Rochester Electronics LLC	AM79C971 - Single-Chip Full-Duplex 10/100 Mbps Ethernet Controller for PCI Local Bus
100324QI	Rochester Electronics LLC	TTL to ECL Translator, 1 Func, Complementary Output, ECL, PQCC28, 0.450 X 0.450 INCH, PLASTIC, MO-047, LCC-28

CHIP BONDING DIE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CPD73 Contextual Info: PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC)	Original	CPD73 28-August CPD73	PDF
CPD73 Contextual Info: PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC)	Original	CPD73 22-March CPD73	PDF
CP353V Abstract: CZT853 Contextual Info: PROCESS CP353V Small Signal Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area	Original	CP353V CZT853 23-May 435-182ess CP353V CZT853	PDF
CHIP TRANSISTOR Abstract: transistor CP353V CZT853 Contextual Info: PROCESS CP353V Small Signal Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area	Original	CP353V CZT853 CHIP TRANSISTOR transistor CP353V CZT853	PDF
CP353V Abstract: CZT853 Contextual Info: PROCESS CP353V Small Signal Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area	Original	CP353V CZT853 22-March CP353V CZT853	PDF
transistor Abstract: CHIP TRANSISTOR CP753V CZT953 Contextual Info: PROCESS CP753V Small Signal Transistors PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area	Original	CP753V CZT953 transistor CHIP TRANSISTOR CP753V CZT953	PDF
CP753V Abstract: CZT953 chip bonding die Contextual Info: PROCESS CP753V Small Signal Transistors PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area	Original	CP753V CZT953 22-March CP753V CZT953 chip bonding die	PDF
CP753V Abstract: CZT953 Contextual Info: PROCESS CP753V Small Signal Transistors PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area	Original	CP753V CZT953 23-May 435-182ess CP753V CZT953	PDF
CPD73 Abstract: BRIDGE RECTIFIER BRIDGE-RECTIFIER Contextual Info: Central PROCESS TM Semiconductor Corp. CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC)	Original	CPD73 CPD73 BRIDGE RECTIFIER BRIDGE-RECTIFIER	PDF
srf 1714 Abstract: PV22-3 Contextual Info: El PV SERIES Piconics PV series has gold plated contact areas for bonding interconnecting leads. The bottom of the ceramic chip has a heavy gold plating for bonding the coil to a substrate. Please note that the PV series can be made with special substrate geometries for flip chip bonding. The core is slide tuned and may be fixed	OCR Scan	M83446 M83446/17. MIL-STD-202, srf 1714 PV22-3	PDF
Contextual Info: PV SERIES Piconics PV series has gold plated contact areas for bonding interconnecting leads. The bottom of the ceramic chip has a heavy gold plating for bonding the coil to a substrate. Please note that the PV series can be made with special substrate geometries for flip chip bonding. The core is slide tuned and may be fixed	OCR Scan	M83446 M83446/17. PV16arometric MIL-STD-202,	PDF
Contextual Info: MONOLITHIC CERAMIC CAPACITOR muftatn. ForWire-bonding/Die-bonding, M LC M icro Chip G M 250 Series •FEATURES 1. Better micro wave characteristics. 2. Suitable for by-passing 3. High density mounting ■APPLICATIONS • Optical device for telecommunication	OCR Scan	GM250	PDF
CP237 Abstract: 2n3725a 2N3725 transistor 2N3725 MPQ3725 MPQ3725A chip die npn transistor Contextual Info: PROCESS CP237 Central Small Signal Transistor TM Semiconductor Corp. NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.4 x 12.5 MILS Emitter Bonding Pad Area	Original	CP237 2N3725 2N3725A MPQ3725 MPQ3725A CP237 2n3725a 2N3725 transistor 2N3725 MPQ3725 MPQ3725A chip die npn transistor	PDF
2N3467 Die Abstract: 2N3467 2N3468 CP667 Contextual Info: PROCESS CP667 Central Small Signal Transistor TM Semiconductor Corp. PNP- Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area	Original	CP667 2N3467 2N3468 2N3467 Die 2N3467 2N3468 CP667	PDF

CM5583 Abstract: CP618 chip die pnp transistor chip die transistor CM5-5 Contextual Info: PROCESS CP618 Central Small Signal Transistor TM Semiconductor Corp. PNP - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 MILS DIAMETER Emitter Bonding Pad Area	Original	CP618 CM5583 CM5583 CP618 chip die pnp transistor chip die transistor CM5-5	PDF
SILICON TRANSISTOR CORP Abstract: transistor CHIP TRANSISTOR CP307 ny transistor ELECTRONIC TRANSISTOR CORP equivalent mpsa14 mpsa14 MPSa14 equivalent 2N6426 Contextual Info: PROCESS CP307 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area	Original	CP307 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 CZTA14 MPSA13 MPSA14 SILICON TRANSISTOR CORP transistor CHIP TRANSISTOR CP307 ny transistor ELECTRONIC TRANSISTOR CORP equivalent mpsa14 mpsa14 MPSa14 equivalent 2N6426	PDF
MPSA13 Abstract: MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14 Contextual Info: Central TM Semiconductor Corp. PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area	Original	CP307 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 CZTA14 MPSA13 MPSA14 MPSA13 MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14	PDF
2N3467 Abstract: CP603 TRANSISTOR GUIDE 2N3468 Contextual Info: Central PROCESS TM CP603 Small Signal Transistors Semiconductor Corp. PNP - Saturated Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 30 x 30 MILS DIE THICKNESS 7.5 MILS BASE BONDING PAD AREA 5.0 x 4.0 MILS EMITTER BONDING PAD AREA	Original	CP603 2N3467 2N3468 2N3467 CP603 TRANSISTOR GUIDE 2N3468	PDF
2N2369A Abstract: CMPT2369 CP207 chip die npn transistor chip die transistor transistor npn 29 Contextual Info: Central TM Semiconductor Corp. PROCESS CP207 Small Signal Transistor NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 14 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.1 x 2.9 MILS Emitter Bonding Pad Area	Original	CP207 2N2369A CMPT2369 16-August 435-111OCESS 2N2369A CMPT2369 CP207 chip die npn transistor chip die transistor transistor npn 29	PDF
CMPT2369 Abstract: 2N2369A CP207 chip die npn transistor Contextual Info: PROCESS CP207 Central Small Signal Transistor TM Semiconductor Corp. NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 14 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.1 x 2.9 MILS Emitter Bonding Pad Area	Original	CP207 2N2369A CMPT2369 435-11PROCESS CMPT2369 2N2369A CP207 chip die npn transistor	PDF
GM250 Contextual Info: MONOLITHIC CERAMIC CAPACITORS FOR WIRE-BONDING/DIE-BONDING MLC MICRO CHIP— GM250 SERIES m uffata /n/iomtvA in Electronics FEATURES • Better m icrowave characteristics ■ Suitable for by-passing ■ High density mounting APPLICATIONS ■ O ptical device for	OCR Scan	GM250 2200pF C-22-C.	PDF
transistor 2N3725 Abstract: 2N3725 2N3725A CP215 MPQ3725 MPQ3725A Contextual Info: Central PROCESS TM CP215 Small Signal Transistors Semiconductor Corp. NPN - Saturated Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 21 x 21 MILS DIE THICKNESS 9.0 MILS BASE BONDING PAD AREA 4.3 x 4.3 MILS EMITTER BONDING PAD AREA	Original	CP215 2N3725 2N3725A MPQ3725 MPQ3725A transistor 2N3725 2N3725 2N3725A CP215 MPQ3725 MPQ3725A	PDF
CP566 Abstract: CMPT404A MPS404A chip die pnp transistor Contextual Info: PROCESS CP566 Central Small Signal Transistor TM Semiconductor Corp. PNP - Silicon Chopper Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31.5 x 31.5 MILS Die Thickness 11 MILS Base Bonding Pad Area 7.8 x 6.2 MILS Emitter Bonding Pad Area	Original	CP566 CMPT404A MPS404A 435-CESS CP566 CMPT404A MPS404A chip die pnp transistor	PDF
CP324 Abstract: 2n7002 12 2N7002 equivalent 2N7002 chip die transistor Contextual Info: Central PROCESS TM Semiconductor Corp. CP324 Small Signal MOSFET Transistor N - Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.65 x 21.65 MILS Die Thickness 9.0 MILS Gate Bonding Pad Area 5.5 x 5.5 MILS Source Bonding Pad Area	Original	CP324 2N7002 18-August CP324 2n7002 12 2N7002 equivalent 2N7002 chip die transistor	PDF

CHIP BONDING DIE Search Results

CHIP BONDING DIE Result Highlights (5)

CHIP BONDING DIE Datasheets Context Search

CPD73

CPD73

CP353V

CHIP TRANSISTOR

CP353V

transistor

CP753V

CP753V

CPD73

srf 1714

CP237

2N3467 Die

CM5583

SILICON TRANSISTOR CORP

MPSA13

2N3467

2N2369A

CMPT2369

GM250

transistor 2N3725

CP566

CP324