CGS 074 Search Results

MALLORY CAPACITORS cgs

Abstract: MALLORY TYPE CGS S85IU CGS402T200W4C 24U02 CGS35IT450R5C si93 CGS302U025 CGS102T350V4C cgs822u035r3c
Contextual Info: Type CGS • MallorY Computer Grade Capacitors GENERAL SPECIFICATIONS DC Leakage C urrent: I = .006 V C V after 30 minutes Not to exceed 6mA C = Capacitance in V = Rated Voltage I = Leakage Current in mA ■ High CV Product ■ Screw Terminals ■ Suitable for use in most

MALLORY CGS CAPACITORS

Abstract: mallory capacitor fp CGS222U050R2C Mallory Type CGS Mallory cgs MALLORY CAPACITOR CATALOG MALLORY 150 M CAPACITORS
Contextual Info: • Types CGS, CG, CGR, CGO, CGH Dimensions and Size Charts MallorY Case Code Chart Uninsulated Can_ _Inches . — A O O ro a « o E 3 R2C R2L R3C R3L R4C R4L R5C R5L U2C U2L U3C U3L U4C U4L U5C U5L V2C V2L V3C V3L V4C V4L V5C V5L W3C W3L W4C W4L

Mallory Type CG

Abstract: CGS133U040V4C
Contextual Info: Types CGS, CG, CGR, CGO, CGH I M allorY Dimensions and Size Charts Case Code Chart Uninsulated Can_ Case C ode R2C R2L R3C R3L R4C R4L R5C R5L U2C U2L U3C U3L U4C U4L U5C U5L V2C V2L V3C V3L V4C V4L V5C V5L W3C W3L W4C W4L W5C W5L X3L X4C X4L X5C X5L

LTC3780

Abstract: LTC4446 LTC4444-5 LTC4444E-5 LTC4444I-5 LTC4444MP-5 LTC4444MPMS8E-5 LTC3780EG 4.5V to 100V input regulator LTC4440-5
Contextual Info: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver Features n n n n n n n n n n n n n n Description Bootstrap Supply Voltage to 114V Wide VCC Voltage: 4.5V to 13.5V Adaptive Shoot-Through Protection 1.4A Peak Top Gate Pull-Up Current 1.75A Peak Bottom Gate Pull-Up Current

LTC4444-5

Abstract: LTC4444HMS8E LTC4444MPMS8E LTC4446 8H,D3 4444 diode bg 8pin msop package LTC4440-5 LTC1154
Contextual Info: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES DESCRIPTION n The LTC 4444 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs with

LTC4440-5

Abstract: LTC1154
Contextual Info: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES n n n n n n n n n n n n n n DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 7.2V to 13.5V Adaptive Shoot-Through Protection 2.5A Peak TG Pull-Up Current 3A Peak BG Pull-Up Current

LTC4440-5

Abstract: LTC1154
Contextual Info: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver FEATURES n n n n n n n n n n n n n n DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 4.5V to 13.5V Adaptive Shoot-Through Protection 1.4A Peak Top Gate Pull-Up Current 1.75A Peak Bottom Gate Pull-Up Current

LTC4444-5

Abstract: LTC4444MP LTC4444MPMS8E LTC4446 4444 diode LTC4440-5 LTC1154
Contextual Info: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver Features n n n n n n n n n n n n n n Description Bootstrap Supply Voltage to 114V Wide VCC Voltage: 7.2V to 13.5V Adaptive Shoot-Through Protection 2.5A Peak TG Pull-Up Current 3A Peak BG Pull-Up Current

LTC4444H-5

Abstract: LTC4444-5 WSL2512R0250FEA CDEP147NP-100MC-125 LTC4444I-5 MMDL770T1G LTC4444E-5 LTC4444HMS8E-5 LTC4444MPMS8E-5 LTC4446
Contextual Info: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver FEATURES DESCRIPTION n The LTC 4444-5 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs

lg 5528

Contextual Info: MwT-6 GaAs FET DEVICE PRELIMINARY M IC R O W A V E TECHNOLOGY MICROWAVE 4268Solar Way; Fremont,. CA 94538 415-651-6700 FAX 415-651-2208 TECHNOLOGY 37E D blSMlüQ GQDGÜ3S S MRUV FEATURES • 0.3 MICRON REFRACTORY METAL/GOLD GATE • AIR BRIDGE TECHNOLOGY • DIAMOND-UKE CARBON DLC PASSIVATION

Contextual Info: SPICE Device Model Si7101DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: MICROWAVE TECHNOLOGY bbE usvt I- r m blEMlOQ 00D023A LTS • PIRUV w T - 3 26 GHz High Power GaAs FET 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES r —7Pr l «* ■ M MicroWave Technology t » • +21 DBM OUTPUT POWER AT 12 GHZ

K 1358 fet transistor

Abstract: DIE CHIP 51 FET
Contextual Info: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y j 50->| 3? • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH CHOICE OF CHIP AND ONE

transistor WT6

Abstract: transistor WT6 45 transistor WT6 Equivalent WT6 transistor 651-220K pin configuration of ic 1496
Contextual Info: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y if 50f| • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH CHOICE OF CHIP AND ONE

MWT370HP

Abstract: IAM F30 371 fet MwT-373
Contextual Info: MwT - 3 26 GHz High Power GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FA X 510-651-2208 FEATURES rr n c: — • +21 DBM OUTPUT POWER AT 12 GHZ T n — 4 t« • 11 DB SMALL SIGNAL GAIN AT 12 GHZ 7t „J U J.L U •0.3 MICRON REFRACTORY METAL/GOLD GATE

Contextual Info: MwT-S7 18 GHz High Gain, Low Noise GaAs FET MICROWAVE TECHNOLOGY n • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 250 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO

NE33284AS

Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536
Contextual Info: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:

NE33284A

Abstract: NE33284AS NE33284A-SL NE33284A-T1
Contextual Info: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:

Contextual Info: MwT-S7 u s M ic r o w a v e 18 GHz High Gain, Low Noise GaAs FET a techno lo gy àk • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL7GOLD GATE • 250 MICRON GATE WIDTH

78567

Abstract: LS 373
Contextual Info: MwT-3 26 GHz High Power GaAs FET Mic r o w a v e T e c h n o lo g y rr +21 DBM OUTPUT POWER AT 12 GHZ 11 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL/GOLD GATE 300 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES Unite in 241 I« 75 J

mwt-970

Abstract: 16662 ic 74390 61787
Contextual Info: MwT-9 M ic r o w ave 18 GHz High Power GaAs FET T echno lo g y ri iiiniiiMiiii! +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES - • _ I

Contextual Info: MwT-9 ËàkWiü 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y r 1 67 +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAUGOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES p it t iiiim

LD 8164

Abstract: ic lg 631
Contextual Info: MwT-9 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y r,!i 6/ löSmmjuir +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES rAï

Contextual Info: MwT-3 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y rr • • • • • +21 DBM OUTPUT POWER AT 12 GHZ 11 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL/GOLD GATE 300 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES