CGD10 Search Results

CGD1044H

Contextual Info: CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 3 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

Contextual Info: Product Qualification Package CGD1042H 1 GHz, 23 dB Gain high output power doubler Rev. 01 — November 30, 2009 Document information Info Content Keywords Product Qualification Package Abstract This document presents the characteristics of CGD1042H power doubler

Contextual Info: Product Qualification Package CGD1044Hi 1 GHz, 25dB gain GaAs high output power doubler Rev. 01 — December 27, 2009 Document information Info Content Keywords Product Qualification Package Abstract This document presents the characteristics of CGD1044Hi power doubler

TRANSISTOR RF 1003

Abstract: TRANSISTOR 1003 CGD1040HI
Contextual Info: CGD1040HI 1 GHz, 20 dB gain GaAs high output power doubler Rev. 01 — 22 September 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

Contextual Info: Product Qualification Package CGD1042Hi 1 GHz, 22dB gain GaAs high output power doubler Rev. 01 — December 18, 2009 Document information Info Content Keywords Product Qualification Package Abstract This document presents the characteristics of CGD1042Hi power doubler

Contextual Info: CGD1044HI 1 GHz, 25 dB gain GaAs high output power doubler Rev. 2 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

CGD1044H

Contextual Info: CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 02 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

CGD1042HI

Contextual Info: CGD1042HI 1 GHz, 22 dB gain GaAs high output power doubler Rev. 2 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

CGD1046HI

Contextual Info: CGD1046HI 1 GHz, 27 dB gain GaAs high output power doubler Rev. 1 — 30 July 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

CGD1042H

Abstract: BV 1 150
Contextual Info: CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 3 — 28 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

Contextual Info: Product Qualification Package CGD1044H 1 GHz, 25 dB Gain high output power doubler Rev. 01 — January 8, 2010 Product Qualification Package CGD1044H NXP Semiconductors Revision history Rev Date Description 01 20100108 Initial Release Contact information For additional information, please visit: http://www.nxp.com

CGY1047

Abstract: CGD1042 CGD1044 CGD104xH CGD1042H CGD1044H CGY1041 CGY1043
Contextual Info: NXP high-gain power doublers CGD104x Upgrade to sustainable 1 GHz CATV networks NXP offers a choice of standard and high-output power doublers for 1 GHz CATV applications. These high performance GaAs devices make it easy for cable operators to extend their services

Contextual Info: CGD1044HI 1 GHz, 25 dB gain GaAs high output power doubler Rev. 01 — 21 September 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

CGD1042HI

Contextual Info: CGD1042HI 1 GHz, 22 dB gain GaAs high output power doubler Rev. 01 — 21 September 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

TRANSISTOR 1003

Abstract: CGD1042HI
Contextual Info: CGD1042HI 1 GHz, 22 dB gain GaAs high output power doubler Rev. 2 — 29 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

Contextual Info: Product Qualification Package CGD1040Hi 1 GHz, 20dB gain GaAs high output power doubler Rev. 01 — December 11, 2009 Document information Info Content Keywords Product Qualification Package Abstract This document presents the characteristics of CGD1040Hi power doubler

CGD1042H

Contextual Info: CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 01 — 9 October 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

Contextual Info: CGD1042L 1 GHz, 23 dB gain GaAs low current power doubler Rev. 1 — 10 March 2014 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115AE package, operating at a supply voltage of 24 V Direct Current DC , employing Heterojunction Field Effect Transistor (HFET) GaAs dies.

CGD1044H

Contextual Info: CGD1044H 1 GHz, 25 dB gain high output power doubler Rev. 01 — 10 October 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

CGD1042H

Contextual Info: CGD1042H 1 GHz, 23 dB gain high output power doubler Rev. 02 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current DC , employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.

Contextual Info: Product Qualification Package CGY888C 34 dB, 870 MHz GaAs push-pull forward amplifier Rev. 02 — December 29, 2009 Document information Info Content Keywords Product Qualification Package Abstract This document presents the characteristics of CGY888C push pull CATV