GSO05553
Abstract: Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65
Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393
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Q62702-F1393
Q62702-F1394
GSO05553
GSO05553
Q62702-F1393
Q62702-F1394
smd 3520
CFY 35-23
GaAs FET cfy 14
CFY 19
CFY 65
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SMD MARKING CODE 901
Abstract: CFY 19 CFY 10 GaAs FET cfy 14
Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393
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Q62702-F1393
Q62702-F1394
GSO05553
SMD MARKING CODE 901
CFY 19
CFY 10
GaAs FET cfy 14
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GaAs FET cfy 19
Abstract: CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19
Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393
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Q62702-F1394
Q62702-F1393
GSO05553
GaAs FET cfy 19
CFY 35-20
F1393
f1394
GSO05553
Q62702-F1393
Q62702-F1394
smd code marking 814
cfy 19
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GaAs FET cfy 14
Abstract: GaAs FET cfy 19 CFY 10 marking K gaas fet Ga FET marking k F1393 Q62702-F1393 Q62702-F1394 f5035 cfy 19
Text: CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device,
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Q62702-F1393
Q62702-F1394
GaAs FET cfy 14
GaAs FET cfy 19
CFY 10
marking K gaas fet
Ga FET marking k
F1393
Q62702-F1393
Q62702-F1394
f5035
cfy 19
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d-10
Abstract: gaas fet marking a GaAs FET cfy 19 CFY 35-20 F1393 f1394 marking code 5 Q62702-F1393 Q62702-F1394 siemens gaas fet
Text: CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device,
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Q62702-F1393
Q62702-F1394
d-10
gaas fet marking a
GaAs FET cfy 19
CFY 35-20
F1393
f1394
marking code 5
Q62702-F1393
Q62702-F1394
siemens gaas fet
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F5049
Abstract: siemens gaas fet 76 marking code SIEMENS gaas fet marking a CFY30 HL 050 118 31 04 FET marking code FET marking codes FET transistors with s-parameters Q62703-F97
Text: CFY 30 GaAs FET Datasheet * Low noise Fmin = 1.4 dB @ 4 GHz * High gain ( 11.5 dB typ. @ 4 GHz ) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz
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Q62703-F97
OT-143
F5049
siemens gaas fet
76 marking code SIEMENS
gaas fet marking a
CFY30
HL 050 118 31 04
FET marking code
FET marking codes
FET transistors with s-parameters
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PDF
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CFY 10
Abstract: gaas fet marking a Ga FET marking k CFY 19 cfy 14 d marking Micro-X CFY 18 GaAs FET cfy 19 GaAs Amplifier Micro-X Marking k Q62703-F106
Text: GaAs FET ● ● ● ● ● CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel Pin Configuration
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Q62703-F106
Q62703-F107
Q62703-F108
CFY 10
gaas fet marking a
Ga FET marking k
CFY 19
cfy 14
d marking Micro-X
CFY 18
GaAs FET cfy 19
GaAs Amplifier Micro-X Marking k
Q62703-F106
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Untitled
Abstract: No abstract text available
Text: GaAs FET CFY 30 Data Sheet • Low noise Fmin = 1.4 dB @ 4 GHz • High gain (11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation
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OT-143
Q62703-F97
P-SOT143-4-1
GPS05559
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GaAs FET cfy 14
Abstract: marking code s22 GPS05559 Q62703-F97 MARKING code GM SOT 323 SMD Transistor Marking Code 71 SOT 23 smd transistor cfy P-SOT-143-4-1 GaAs FET cfy 19
Text: GaAs FET CFY 30 Data Sheet • Low noise Fmin = 1.4 dB @ 4 GHz • High gain (11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation
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Original
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OT-143
Q62703-F97
P-SOT143-4-1
GPS05559
GaAs FET cfy 14
marking code s22
GPS05559
Q62703-F97
MARKING code GM SOT 323
SMD Transistor Marking Code 71 SOT 23
smd transistor cfy
P-SOT-143-4-1
GaAs FET cfy 19
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Untitled
Abstract: No abstract text available
Text: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high
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CFY35
CFY35
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GaAs FET cfy 14
Abstract: Q62703-F97 CFY 18
Text: GaAs FET ● ● ● ● ● ● ● CFY 30 Low noise Fmin = 1.4 dB at 4 GHz High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz lon-implanted planar structure Chip all gold metallization Chip nitride passivation ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Original
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Q62703-F97
OT-143
GaAs FET cfy 14
Q62703-F97
CFY 18
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MARKING A2
Abstract: smd transistor cfy GPS05559 Q62703-F97 MARKING code GM SOT 323 CFY30 P-SOT143-4-1 cfy transistor
Text: GaAs FET CFY 30 Data Sheet • • • • • • • Low noise Fmin = 1.4 dB @ 4 GHz High gain (11.5 dB typ. @ 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion implanted planar structure Chip all gold metallization Chip nitride passivation
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OT-143
Q62703-F97
P-SOT-143-4-1
GPS05559
MARKING A2
smd transistor cfy
GPS05559
Q62703-F97
MARKING code GM SOT 323
CFY30
P-SOT143-4-1
cfy transistor
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cfy 14 siemens
Abstract: CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23
Text: SIEMENS AKTIENGESELLSCHAF QBE D • fl23SbDS QOlSb?*} T H S I E G 7~“3/-^5' GaAs FETs Gallium Arsenide Field-Effect Transistors Metal Ceram ic Packages Type Max. ratings V ds V 5 CFY 10 5 CFY 11 CFY 12 5 0 CFY 19-18 6 □ CFY 19-22 6 □ CFY 19-27 6 CFY 18-12 5
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fl23SbDS
cfy 14 siemens
CFY 18
CFY 10
cfy siemens
CFY12
CFY10
CFY 18-23
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GaAs FET cfy 19
Abstract: S11 SIEMENS z0 607 MA 7a
Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20
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V5005553
Q62702-F1393
Q62702-F1394
GaAs FET cfy 19
S11 SIEMENS
z0 607 MA 7a
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NF 847 G
Abstract: NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X
Text: System Overview Outdoor Unit SAT - TV Low Noise Converter LNC RF Amplifier Mixer Oscillator 3. Stage active passive CFY 35-20 CFY 35-23 BAT 15-099/ BAT 15-04 IF-Amplifier 1. Stage 2. Stage BFP 405 BFP 420 CFY 30/ BFP 405 Power Supply 2 x BCX 51 3 x BC 858/W
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858/W
857/W
IQ62702-C1847
Q62702-C954
62702-C1884
Q62702-C1850
Q62702-C1742
Q62702-F1393
Q62702-F1394
Q62703-F97
NF 847 G
NF 833
nf 739
BA 857
k d 998 0
BAT 99
diode bav
Siemens transistors rf
CFY 35-20
6149-5X
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CLY 30
Abstract: cfy siemens CLYS MW-6 cly5
Text: Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Type Maximum Ratings Characteristics TA = 25 °C Package Lead Code V J'bs J'gs V h mA Aot mW 8m mS F dB CFY 77-08 3.5 2 60 180 65 0.7 10.5 12 MW-4 3 CFY 77-10 3.5 2 60 180 65 0.9 10 12 MW-4 3 :
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OT-223
fiE3Sb05
CLY 30
cfy siemens
CLYS
MW-6
cly5
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GaAs FET cfy 14
Abstract: No abstract text available
Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration
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OCR Scan
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Q62702-F1393
Q62702-F1394
GaAs FET cfy 14
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PDF
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CFY10
Abstract: siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens
Text: SIEMENS CFY 10 GaAs FET • Low noise • High gain • Suitable up to 14 G Hz • Ion-implanted planar structure • All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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Q62703-F11
fl23SbOS
00b74cÃ
CFY10
fl235fci05
CFY10
siemens gaas fet
CFY 10
Ga FET marking k
CFY 18
cfy 14 siemens
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cfy 19 siemens
Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
Text: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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VXM05208
Q62703-F106
Q62703-F107
Q62703-F108
0Qfcj75Cn
cfy 19 siemens
cfy 14 siemens
CFY 18
siemens gaas fet
CFY 19
cfy siemens
cfy 25-20 cfy 25-17
CFY 10
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Q62702-F1394
Abstract: No abstract text available
Text: Infineon faîhnoîogte» G aA s FET CFY 3 5 Data Sheet • • Low noise High gain • For low-noise front end amplifiers • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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Q62702-F1393
Q62702-F1394
Q62702-F1394
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PDF
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ncl 071
Abstract: ncl 052 ncl 058
Text: Infineon technologies GaAs FET CFY 30 Data Sheet • Low noise {Fmin = 1.4 dB @ 4 GHz • High gain 11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation
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OCR Scan
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Q62703-F97
P-SOT143-4-1
Val15
ncl 071
ncl 052
ncl 058
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siemens gaas fet
Abstract: E7916 pinFET marking c6 cerec
Text: SIEMENS GaAs FET CFY 25-20 E7916 Preliminary Data • • • • • Low noise High gain Low gate-leakage current All gold metallization For high-speed fibre optic receivers and PIN-FET modules up to 2.4 Gbit/sec VC E05255 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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E7916
E05255
E7916
Q62703-F113
fl23SbOS
D0b7S13
A235b05
00b7Sm
siemens gaas fet
pinFET
marking c6
cerec
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS CFY 30 GaAs FET • • • • • • • Low noise Fmin= 1.4 dB @ 4 GHz High gain (11.5 dB typ. @ 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion implanted planar structure Chip all gold metallization Chip nitride passivation
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OCR Scan
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Q62703-F97
OT-143
D15SS7b
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PDF
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cfy 19 siemens
Abstract: No abstract text available
Text: SIEMENS CFY 19 GaAs FET • • • • • Low noise High gain Ion-implanted planar structure All gold metallization For front ends • For oscillators • For antenna amplifiers from UHF up to 12 GHz • Hi rel/MIL tested upon request ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62703-F14
Q62703-F3
G0b7502
00h7S03
cfy 19 siemens
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