CFK2062 Search Results

transistor l1w smd

Abstract: ng52 mmic transistor E5 SMD Transistor Y04 SMD K62 smd mmic transistor E5 WG1 smd O2W transistor G7FH transistor g7x
Contextual Info: CCS1930 Product Information March 1996 1 of 2 1.85 to 2.0 GHz 1 Watt Amplifier Chip Set Features ❏ High Gain ≈ 32 dB ❏ +30 dBm Output Power @ 5 Volts ❏ >45% Efficiency Achievable ❏ Small Size Functional Block Diagram CMM1301 CFK2062 Applications

Contextual Info: 9 e SLE B Ê TE K P roduct S p ecificatio n s D e ce m b er 1 9 9 7 1 o f 4 CFK2062-P1 800 to 900 MHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

transistor KSP 92 G 23

Abstract: CFK2062-P1 CFK2062-P1-000T
Contextual Info: CFK2062-P1 XPP@š•@YPP@mh¡ KSP@‡b“@p•žˆ˜@g„a @fet mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

CFK2062-P5

Abstract: CFK2062-P5-000T
Contextual Info: CFK2062-P5 RNS@š•@RNU@gh¡ KSP@‡b“@p•žˆ˜@g„a @fet mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

SMD TRANSISTOR ANALOG

Abstract: SMD TRANSISTOR LIST CCS1930 CFK2062 CFK2062-P3 CMM1301 CMM1301-AM CSW2102 PB-CCS1930 SOIC-16
Contextual Info: CELERÊTEK g CCS1930 1.85 to 2.0 GHz 1 Watt Amplifier Chip Set P roduct Inform ation M arch 1996 Oof 2 Features □ High Gain = 32 dB □ +30 dBm Output Power @ 5 Volts □ >45% Efficiency Achievable □ Small Size Functional Block Diagram 1 CMM1301 CFK2062 I

wy smd transistor

Abstract: transistor k626 GHW Connectors g1n transistor TRANSISTOR f5j transistor smd 3f13 smd transistor EY transistor smd 3fh smd transistor fh f5j transistor
Contextual Info: CCS2930 Product Information March 1996 1 of 2 2.4 to 2.5 GHz 1 Watt Amplifier Chip Set Features ❏ High Gain ≈ 30 dB ❏ +30 dBm Output Power @ 5 Volts ❏ 33% Efficient ❏ Small Size Functional Block Diagram CMM2301 CFK2062 Applications ❏ ISM Band Base Stations

transistor KSP 56

Abstract: transistor KSP 92 G 23 CFK2062-P3 CFK2062-P3-000T
Contextual Info: CFK2062-P3 QNX@š•@RNP@gh¡ KSP@‡b“@p•žˆ˜@g„a @fet mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

Contextual Info: 0.8-1.0 MHz +30 dBm Power GaAs FET August 2007 - Rev 01-Aug-07 CFK2062-P1 Features Package Diagram High Gain +30 dBm Power Output Proprietary Power FET Process >40% Linear Power Added Efficiency Surface Mount SO-8 Power Package G GND GND G 1 2 3 4 Back Plane

Contextual Info: CFK2062-P1 Product Specifications May 1996 1 of 4 800 to 900 MHz +30 dBm Power GaAs FET Features ❏ High Gain ❏ +30 dBm Power Output ❏ Proprietary Power FET Process ❏ >40% Linear Power Added Efficiency ❏ Surface Mount SO-8 Power Package Package Diagram

lambda LDS

Abstract: CFK2062-P1 CFK2062-P1-000T ita27
Contextual Info: CFK2062-P1 P ro d u c t S p e c ific a tio n s D ecem ber 1997 1 of 4 800 to 900 MHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

CFK2062-P1

Abstract: CFK2062-P1-000T
Contextual Info: CFK2062-P1 Product Specifications July 1997 1 of 4 800 to 900 MHz +30 dBm Power GaAs FET Features ❏ High Gain ❏ +30 dBm Power Output ❏ Proprietary Power FET Process ❏ >40% Linear Power Added Efficiency ❏ Surface Mount SO-8 Power Package Package Diagram

5Bt fet

Contextual Info: 'CB U a n T B r Product S pecifications D e cem b er 1 9 9 7 iof4 CFK2062-P5 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

Contextual Info: CFK2062-P3 QNX@š•@RNP@gh¡ KSP@‡b“@p•žˆ˜@g„a @fet mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

PT 4115

Abstract: CFK2062-P1 CFK2062-P1-000T
Contextual Info: CFK2062-P1 800 to 900 MHz +30 dBm Power GaAs FET Product Specifications December 1997 1 of 4 Features ❏ High Gain ❏ +30 dBm Power Output ❏ Proprietary Power FET Process ❏ >40% Linear Power Added Efficiency ❏ Surface Mount SO-8 Power Package Package Diagram

SMD Transistor A

Contextual Info: 9 CELERITEK P roduct Inform ation M arch 1 9 9 6 1 of 2 CCS 1930 1.85 to 2.0 GHz 1 Watt Amplifier Chip Set Features □ High Gain « 32 dB □ +30 dBm Output Power @ 5 Volts □ >45% Efficiency Achievable □ Small Size Functional Block Diagram CMM1301 CFK2062 I

4318J

Abstract: shab
Contextual Info: JCEIEMTEK Product S p ecificatio n s M ay 1996 iof4 Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package CFK2062-P1 800 to 900 MHz +30 dBm Power GaAs FET

CFK2062-P3

Abstract: CFK2062-P3-000T
Contextual Info: CFK2062-P3 Product Specifications July 1997 1 of 4 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features ❏ High Gain ❏ +30 dBm Power Output ❏ Proprietary Power FET Process ❏ >40% Linear Power Added Efficiency ❏ Surface Mount SO-8 Power Package Package Diagram

CFK2062-P5

Contextual Info: CFK2062-P5 RNS@š•@RNU@gh¡ KSP@‡b“@p•žˆ˜@g„a @fet mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

PBA FET

Abstract: CFK2062-P5 CFK2062-P5-000T
Contextual Info: s i m B P H m P rod u ct S p e cifica tio n s D ecem b er 1997 iof4 CFK2062-P5 r 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

transistor SMD t05

Abstract: transistor t05 smd smd transistor t05 MCR03JW024 smd transistor p5 t05 package transistor pin configuration C10-C15 MCR10JW223 smd t05 SMD TRANSISTOR LIST
Contextual Info: S E L E m rS K 9 CCS2930 2.4 to 2.5 GHz 1 Watt Amplifier Chip Set Product Inform ation March 1996 1 of 2 Features □ High Gain = 30 dB □ +30 dBm Output Power @ 5 Volts □ 33% Efficient □ Small Size Functional Block Diagram 1 CMM2301 CFK2062 I Applications

CFK2062-P3

Abstract: CFK2062-P3-000T pt 4115 FET 4953
Contextual Info: .fCICDITClf P ro d u c t S p e c ific a tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package

CFK2062-P1

Abstract: CFK2062-P1-000T MA3223
Contextual Info: 800-900 MHz +30 dBm Power GaAs FET August 2006 - Rev 03-Aug-06 CFK2062-P1 Features High Gain +30 dBm Power Output Proprietary Power FET Process >40% Linear Power Added Efficiency Surface Mount SO-8 Power Package Package Diagram G GND GND G 1 2 3 4 Back Plane

Contextual Info: CFK2062-P1 XPP@š•@YPP@mh¡ KSP@‡b“@p•žˆ˜@g„a @fet mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

Contextual Info: 9 ~ n ~ f a g j g ffg y Product S p ec ifica tio n s D ecem ber 1 9 9 7 1 o f 4 CFK2062-P3 1.8 to 2.0 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package