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    CF001 Search Results

    CF001 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    FCF001 Renesas Electronics Corporation Front-End IC (Low Noise Amplifier) for TV Application Visit Renesas Electronics Corporation
    SF Impression Pixel

    CF001 Price and Stock

    Nihon Dempa Kogyo Co Ltd LNCF001-8M

    CRYSTAL 8.0000MHZ 8PF SMD
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    DigiKey LNCF001-8M Reel 82,000 1,000
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    Nihon Dempa Kogyo Co Ltd LNCF001-10M

    CRYSTAL 10.0000MHZ 8PF SMD
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    DigiKey LNCF001-10M Digi-Reel 44,789 1
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    LNCF001-10M Cut Tape 44,789 1
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    LNCF001-10M Reel 36,000 1,000
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    Nihon Dempa Kogyo Co Ltd LNCF001-12M

    CRYSTAL 12.0000MHZ 8PF SMD
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    DigiKey LNCF001-12M Cut Tape 20,685 1
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    LNCF001-12M Digi-Reel 20,685 1
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    LNCF001-12M Reel 20,000 1,000
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    Nihon Dempa Kogyo Co Ltd LNCF001-20M

    CRYSTAL 20.0000MHZ 8PF SMD
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    DigiKey LNCF001-20M Cut Tape 7,022 1
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    LNCF001-20M Digi-Reel 7,022 1
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    LNCF001-20M Reel 6,000 1,000
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    Nihon Dempa Kogyo Co Ltd LNCF001-30M

    CRYSTAL 30.0000MHZ 8PF SMD
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    DigiKey LNCF001-30M Digi-Reel 677 1
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    LNCF001-30M Cut Tape 677 1
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    CF001 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CF001 Mimix Broadband GaAs Pseudomorphic HEMT and MESFET Chips Original PDF
    CF001 Unknown CF001 SERIES GAAS PSEUDOMORPHIC HEMT AND MESFET CHIPS Scan PDF
    CF001-01 Mimix Broadband GaAs Pseudomorphic HEMT and MESFET Chips Original PDF
    CF001-01 Celeritek GaAs FETs and MMICs Scan PDF
    CF001-01 Celeritek GaAs Pseudomorphic HEMT and MESFET Chip Scan PDF
    CF001-01 Celeritek 1.6 dB, 12 GHz, GaAs pseudomorphic HEMT and MESFET chip Scan PDF
    CF001-02 Celeritek GaAs FETs and MMICs Scan PDF
    CF001-02 Celeritek 1.2 dB, 12 GHz, GaAs pseudomorphic HEMT and MESFET chip Scan PDF
    CF001-03 Mimix Broadband GaAs Pseudomorphic HEMT and MESFET Chips Original PDF
    CF001-03 Celeritek GaAs FETs and MMICs Scan PDF
    CF001-03 Celeritek 0.8 dB, 12 GHz, GaAs pseudomorphic HEMT and MESFET chip Scan PDF

    CF001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate


    Original
    PDF 03-Apr-08 CF001-03 CF001-03 MIL-STD-750 comm-000X

    CF001-01

    Abstract: CFB0101 CFB0101B CFA0101A CF001 GaAs MESFET
    Text: GaAs MESFET Transistor CF001-01 March 2008 - Rev 15-Mar-08 Features High Gain: Usable to 44 GHz P1dB Power: 21 dBm Wfer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-01 GaAs-based transistor is a 300 um gate width, sub-half-micron gate length GaAs device with Silicon


    Original
    PDF CF001-01 15-Mar-08 CF001-01 CF001-01-000X CFB0101 CFB0101B CFA0101A CF001 GaAs MESFET

    CF001

    Abstract: No abstract text available
    Text: Crystal band stop filter QBS78.6-2000/01 Application Limiting values 2 pol filter Unit Value MHz dB 78.6 < 3.0 dB > 20 MHz dB dB 79.1.108.6 < 2.0 <2 Ohm/pF Ohm/pF 50 | 0 50 | 0 °C °C +0. +65 -45. +85 according to CF001 i.f.- filter use in mobile and


    Original
    PDF QBS78 CF001 CF001

    pseudomorphic

    Abstract: HEMT CF001 MESFET
    Text: GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF001 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.


    Original
    PDF 03-Aug-06 CF001 pseudomorphic HEMT MESFET

    Untitled

    Abstract: No abstract text available
    Text: CF001 Series g„a @p™ˆ›‡•“•˜–‹Œ†@hemt@„”‡@mesfet@c‹Œ–™ mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“


    Original
    PDF CF001

    CF001-03

    Abstract: CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001
    Text: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate


    Original
    PDF 03-Apr-08 CF001-03 CF001-03 MIL-STD-750 CF001-03-000X CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001

    Untitled

    Abstract: No abstract text available
    Text: 06 October 2006 Specification for monolithic crystal filter: MQF 90.0-1500 /09 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:


    Original
    PDF CF001

    Untitled

    Abstract: No abstract text available
    Text: 01 November 2010 Specification for monolithic crystal filter: MQF 90.0–2000/07 1. General 1.1. Package: 2 x GH 9.4 each filter consists of a pair of two matched duals temperature (°C) 260°C max. 260 217 time (s) max 300s 30,150s 10,30s Reflow soldering: three times max.


    Original
    PDF CF001

    Untitled

    Abstract: No abstract text available
    Text: 24 March 1999 Specification for monolithic crystal filter: MQF 21.4-3000/29 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:


    Original
    PDF CF001

    Untitled

    Abstract: No abstract text available
    Text: 01 April 1999 Specification for monolithic crystal filter MQF 70.0-1500/01 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. 1.6. Type name: Number of poles: Operable temperature range: Operating temperature range: Storage temperature range: 2. Electric values


    Original
    PDF CF001

    Untitled

    Abstract: No abstract text available
    Text: 04 May 2009 Specification for monolithic crystal filter: MQF 45.0-1600/04 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:


    Original
    PDF CF001

    Untitled

    Abstract: No abstract text available
    Text: 08 Novmeber 2007 Specification for monolithic crystal filter: MQF 45.0–1600/08 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:


    Original
    PDF M45A2 CF001

    Untitled

    Abstract: No abstract text available
    Text: 12 June 2013 Specification for monolithic crystal filter MQF 70. 0-5000/13 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 70.0-5000/13 6 -40°C to +85°C -45°C to +85°C


    Original
    PDF CF001

    Untitled

    Abstract: No abstract text available
    Text: 24 June 2011 Specification for monolithic crystal filter 1. General 1.1. Package: MQF 70. 0-3200/06 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:


    Original
    PDF 160mm 200mm

    Untitled

    Abstract: No abstract text available
    Text: 05 October 1999 Specification for monolithic crystal filter MQF 70.0-1500/07 1. General 1.1. Package: 2 x GH 9 each filter consists of a pair of two matched duals 1.2. 1.3. 1.4 1.5 Type name: Number of poles: Operating temperature range: Storage temperature range:


    Original
    PDF CF001

    Untitled

    Abstract: No abstract text available
    Text: 03 March 2011 Specification for monolithic crystal filter: MQF 21.4-3000/01 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:


    Original
    PDF CF001

    Untitled

    Abstract: No abstract text available
    Text: 18 November 2002 Specification for monolithic crystal filter: MQF 21.4-2400/11 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 21.4-2400/11 12 -20°C to +70°C -35°C to +85°C


    Original
    PDF CF001

    Untitled

    Abstract: No abstract text available
    Text: 12 July 2011 Specification for monolithic crystal filter: MQF 45.0-1500/67 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:


    Original
    PDF 160mm 240mm

    Untitled

    Abstract: No abstract text available
    Text: 28 June 2011 Specification for monolithic crystal filter: MQF 40.5-1500/03 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 40.5-1500/03 6 -40°C to +85°C -55°C to +85°C


    Original
    PDF CF001

    Untitled

    Abstract: No abstract text available
    Text: 06 July 2011 Specification for monolithic crystal filter: MQF 45.752-0600/02 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 45.752-0600/02 4 -20°C to +70°C -55°C to +85°C


    Original
    PDF CF001

    CF001

    Abstract: CF001-01 CF001-02 CF001-03 S-11 celeritek ghz GaAs FET HEMT Chips
    Text: CF001 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Super Low Noise: 0.8 dB at 12 G H z □ High Gain: U sable to 44 G H z J P id B P ° wer: to +19 dB m □ Active Layers Include: Pseudom orphic H EM T, E p itaxial and Ion Im planted W afer Q ualification Procedure


    OCR Scan
    PDF CF001 CF001-01. CF001-02 CF001-03 CF001-01 1174SD3 S-11 celeritek ghz GaAs FET HEMT Chips

    CF001-03

    Abstract: CF001 GaAs FET HEMT Chips CF001-01 CF001-02 celeritek ghz CFB001
    Text: CF001 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Super Low Noise: 0.8 dB at 12 GHz □ High Gain: Usable to 44 GHz □ P idB P°wer: U p t0 +19 dBm □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted □ Wafer Qualification Procedure


    OCR Scan
    PDF CF001 CF001-01. CF001-02 CF001-03 GaAs FET HEMT Chips CF001-01 celeritek ghz CFB001

    Untitled

    Abstract: No abstract text available
    Text: CF001 Series GaAs Pseudomorphic HEMT and MESFET Chips J S u p e r Low Noise: 0.8 dB at 12 G H z J High G ain : Usable to 44 G H z J PjdB P°wer: t0 dBm J Active L a y e rs Include: P seu d o m o rp h ic H E M T, E pitaxial an d Ion Im p lanted J W afer Q ualification P ro ced u re


    OCR Scan
    PDF CF001 CF001-01 CF001-03

    Untitled

    Abstract: No abstract text available
    Text: CF001 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Super Low Noise: 0.8 dB at 12 G H z □ High Gain: Usable to 44 GHz □ ^ ld B P °wer: Up t0 +19 dBm J Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted □ Wafer Qualification Procedure


    OCR Scan
    PDF CF001 CF001 cons-107