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    CEP83 Search Results

    CEP83 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEP83A3 Chino-Excel Technology N-Channel Enhancement Mode FET Original PDF

    CEP83 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cep830g

    Abstract: No abstract text available
    Text: CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP830G 500V 1.5Ω 5A 10V CEB830G 500V 1.5Ω 5A 10V CEF830G 500V 1.5Ω 5A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEP830G/CEB830G CEF830G CEP830G CEB830G O-263 O-220 O-220F O-220/263 cep830g

    CEP83A3

    Abstract: CEP83A3G CEB83A3G CEB83A3
    Text: CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS ON = 4.5 mΩ @VGS = 10V. RDS(ON) = 7.0 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEP83A3G/CEB83A3G O-220 O-263 CEP83A3 CEP83A3G CEB83A3G CEB83A3

    CEP83A3

    Abstract: CEP83A3 equivalent CEP8
    Text: CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 100A, RDS ON = 5.3mΩ @VGS = 10V. RDS(ON) = 8.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEP83A3/CEB83A3 O-220 O-263 CEP83A3 CEP83A3 equivalent CEP8

    CEP83A3

    Abstract: CEP83A3 equivalent CEB83A3
    Text: CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS ON = 5.3mΩ @VGS = 10V. RDS(ON) = 8.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP83A3/CEB83A3 O-220 O-263 CEP83A3 CEP83A3 equivalent CEB83A3

    CEP83A3

    Abstract: 9500pF
    Text: CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS ON = 5.3mΩ @VGS = 10V. RDS(ON) = 8.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP83A3/CEB83A3 O-220 O-263 CEP83A3 9500pF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139