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    Abstract: CEB630 CEP630N CE-P630 cef630 CEP63
    Text: CEP630N/CEB630N CEF630N N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEP630N Type 200V 0.36Ω 9A 10V CEB630N 200V 0.36Ω 9A 10V CEF630N 200V 0.36Ω 9A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEP630N/CEB630N CEF630N CEP630N CEB630N O-263 O-220 O-220F O-220/263 cep630 CEB630 CEP630N CE-P630 cef630 CEP63