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    CEP6060 Search Results

    CEP6060 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEP6060
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEP6060L
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEP6060LR
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEP6060R
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF

    CEP6060 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CEP6060R

    Abstract: CEP6060R equivalent CEB6060R cep6060
    Contextual Info: CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor 4 FEATURES 60V , 60A , RDS ON =25m Ω D @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D G S CEB SERIES


    Original     		CEP6060R/CEB6060R O-220 O-263 CEP6060R CEP6060R equivalent CEB6060R cep6060 PDF

    ceb6060l

    Contextual Info: CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A,RDS ON = 20mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.


    Original     		CEP6060L/CEB6060L O-220 O-263 ceb6060l PDF

    cep6060n

    Contextual Info: CEP6060N/CEB6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS ON = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.


    Original     		CEP6060N/CEB6060N O-220 O-263 cep6060n PDF

    CEP6060R

    Abstract: CEP6060
    Contextual Info: CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS ON = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.


    Original     		CEP6060R/CEB6060R O-220 O-263 CEP6060R CEP6060 PDF

    cep6060

    Abstract: u1520 IDM144 S1200 TQ-220
    Contextual Info: mu CEP6060/CEB6060 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 4 8 A , Rds on =25i7iQ @Vgs=10V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220 & TO-263 package.


    OCR Scan     		CEP6060/CEB6060 25itiQ TQ-220 O-263 to-263 cep6060 u1520 IDM144 S1200 TQ-220 PDF

    CEP6060R

    Abstract: CEP6060R equivalent S-1320
    Contextual Info: CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS ON = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.


    Original     		CEP6060R/CEB6060R O-220 O-263 CEP6060R CEP6060R equivalent S-1320 PDF

    cep6060

    Abstract: ceb6060l CEP6060L C3020
    Contextual Info: CEP6060L/CEB6060L March 1998 4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V , 48A , RDS ON =20m Ω @VGS=10V. RDS(ON)=25m Ω @VGS= 5 V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability.


    Original     		CEP6060L/CEB6060L O-220 O-263 cep6060 ceb6060l CEP6060L C3020 PDF

    CEP6060R

    Abstract: EP6060R CEP6060
    Contextual Info: CEP6060R/CEB6060R PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 6 0 A , RDS ON =25m Q @ V g s = 10 V . • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability. • TO-220 & TO-263 package.


    OCR Scan     		CEP6060R/CEB6060R 25itiQ TQ-220 O-263 P6060R/C B6060R CEP6060R EP6060R CEP6060 PDF

    CEP6060L

    Abstract: ceb6060l B606
    Contextual Info: E CEP6060L/CEB6060L E E M arch 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 4 8 A , RDS ON =20m Q @ V gs =1 0V. R ds(on)=25iti Q @ V gs = 5 V. D • Super high dense cell design for extremely low Rds(on> • High power and current handling capability.


    OCR Scan     		CEP6060L/CEB6060L 25itiQ O-220 O-263 to-263 to-220 CEP6060L/CEB6060L CEP6060L ceb6060l B606 PDF

    I2110

    Contextual Info: PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 6 0 A , RDS ON =20mQ @ V g s = 10 V . R ds (o n )=25 iti Q @ V gs= 5 V . • Super high dense cell design for extremely low Rds(on> • High power and current handling capability.


    OCR Scan     		CEP6060LR/CEB6060LR 25itiQ O-220 O-263 to-263 to-220 I2110 PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 PDF