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    cep50n10

    Contextual Info: CEP50N10/CEB50N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS ON = 30mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.


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    CEP50N10/CEB50N10 O-220 O-263 cep50n10 PDF