CEP1 Search Results

Contextual Info: POWER CUSTOM MAGNETICS • Industry standard packages optimized for customer specific needs • SMPS IC manufacturers support Typical Core Power Handling Capabilities CEP Core CEP10 shown EE Core EE16 shown EFD Core EFDD15 shown EP Core EP13 shown NOTES: 1. Values shown are typical and can be modified depending upon core material, wire gauge, and cooling method s used.

Contextual Info: SMD Power Inductor CEP123 Description • Ferrite core construction. • Magnetically shielded. • L W H: 12.8 12.8 3.5 mm Max. • Product weight: 1.5g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. RoHS x × Dimension - [mm] 1.70±0.2 ②

Contextual Info: THE INFÜRMATIÜN CONTAIÆD HEREIN IS CONSIDERED •PROPRIETARY' TD BEL FUSE INC. AND SHALL MDT BE CEP1ED, REPRODUCED CR MSCLEISED WITHOUT THE VRITTEN APPROVAL DF BEL RJSE IND. SCHEMATIC PIN RJ45 ELECTRICAL CHARACTERISTICS B 25»C TURNS RAT1D TRD1+ 1L 12 TP2

CEP1311

Contextual Info: ADSL Transformer< SMD Type: CEP Series> Type: CEP1311C ◆ Product Description ・13.5mm Max.x13.0mm Typ. L×W ,12.0mm Max. Height. ◆ Feature ・xDSL line transformer. ・Ideally used in ADSL Customer Premises Equipment and splitter. ・Approved by Conexant and Broadcom.

CEP12P10

Contextual Info: CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS ON =315mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.

Contextual Info: CEP12N5/CEB12N5 CEF12N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP12N5 500V 0.54Ω 12A 10V CEB12N5 500V 0.54Ω 12A 10V CEF12N5 500V 0.54Ω 12A d 10V D Super high dense cell design for extremely low RDS(ON).

Contextual Info: THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANCON. No. OF CIRCUITS DIM "A" IN. mm PART NUMBER * 18 AWG 20 AWG 22 AWG 24 AWG WT./100 PCS. Lbs. (GRAMS) 2 .31 (7.9) CEP156F18-2 CEP156F20-2 CEP156F22-2

Contextual Info: CEP13N07/CEB13N07 N-Channel Enhancement Mode Field Effect Transistor FEATURES 70V, 13A, RDS ON = 125mΩ @VGS = 10V. RDS(ON) = 150mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

CEP10N4

Contextual Info: CEP10N4/CEB10N4 Sep. 2002 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 450V , 10A , RDS ON =700m Ω VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D

ADSL splitter

Abstract: CEP1010 SMD Transformer SD0052
Contextual Info: ADSL Transformer< SMD Type: CEP Series> Type: CEP1010 ◆ Product Description ・15.1x12.4mm Max. L×W ,10.9mm Max. Height. ◆ Feature ・xDSL line transformer. ・Ideally used in ADSL Customer Premises Equipment and splitter. ・RoHS Compliance. ◆ Dimensions (mm)

broadcom adsl

Abstract: ADSL splitter CEP1311C c1018 C10113A C10125 C10129B C10134 C10180
Contextual Info: ADSL Transformer< SMD Type: CEP Series> Type: CEP1311C ◆ Product Description ・17.3x13.5 mm Max. L×W ,12.3 mm Max. Height. ◆ Feature ・xDSL line transformer. ・Ideally used in ADSL Customer Premises Equipment and splitter. ・Approved by Conexant and Broadcom.

CEB1710

Abstract: CEP1710 CEF1710
Contextual Info: CEP1710/CEB1710 CEF1710 N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEP1710 Type 100V 85mΩ 19A 10V CEB1710 100V 85mΩ 19A 10V CEF1710 100V 85mΩ 19A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

CEB10N6

Abstract: CEF10N6 CEP10N6
Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).

Contextual Info: CEP1012L/CEB1012L N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS ON = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.

CEP1195

Contextual Info: CEP1195/CEB1195 CEF1195 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP1195 900V 2.75Ω 5A 10V CEB1195 900V 2.75Ω 5A 10V CEF1195 900V 2.75Ω 5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

smd PULSE TRANSFORMER

Abstract: Pulse Transformer VAC sumida ift coil M-8G MC-102 transformer ADSL splitter CEP1311 RM6 transformer MIT-4115V EEH1313 MIT4115V
Contextual Info: For xDSL LINE TRANSFORMER & SPLITTER COILS For xDSL LINE TRANSFORMER & SPLITTER COILS RM4 EEH1313 RM6 EEH1617 CEP79 CEP1311 CEP811 EP1311 TEL For xDSL LINE TRANSFORMER & SPLITTER COILS PC CEP1311C CPFC85 Line Transformer • OUTLINE／概要 It is a xDSL line transformer which corresponds to the smaller foot

CEP12D38

Contextual Info: POWER INDUCTORS <SMD Type: CEP Series> Type: CEP12D38 ◆ Product Description ・12.8x12.8mm Max. L×W , 4.0mm Max. height ・Inductance range 1.0～4.0 H(Standard type ); 0.6～2.6μH (High Power type). ・Saturation Current range: 7.2～14.8A(Standard type ) ;

CEP125

Abstract: 16uH 48uH
Contextual Info: POWER INDUCTORS SMT Type CEP125 SHIELDED TYPE Outline By using the square wire, power inductors can be used for strong currents with low profile and low resistance. Dimensions (mm) 5.7MAX. 2.6 3.0 4.0 10.0 4.0 4.2 2 3 7.0 12.9MAX. CONSTRUCTION CONNECTION

Sumida DATE CODE

Abstract: SMD Transformer CEP1311E CEP1311 Sumida C10113C C14206 C10113
Contextual Info: ADSL Transformer< SMD Type: CEP Series> Type: CEP1311E ◆ Product Description ・15.8mm x13.8mm L×W ,13.0mm Max. Height. ◆ Feature ・xDSL line transformer. ・Ideally used in complete telecomm equipment for ADSL/ADSL2/ADSL 2+ application. ・Approved by Conexant and Texas Instruments.

Contextual Info: CEP13N07/CEB13N07 N-Channel Enhancement Mode Field Effect Transistor FEATURES 70V, 13A, RDS ON = 125mΩ @VGS = 10V. RDS(ON) = 150mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: SMD Power Inductor CEP12D38 Description • Ferrite core construction. • Magnetically shielded. • L W H: 12.8 12.8 4.0 mm Max. • Product weight:1.83g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. RoHS x × Dimension - [mm] 1.70±0.2 ②

CEP- 83 A

Abstract: 5r6mh 7R2MH
Contextual Info: Power Inductors <SMD Type: CEP Series> Type: CEP125 ◆ Product Description ・12.9x12.9mm Max. L×W , 5.6mm Max. height ・Standard Type,High Power Type,Ultra Power Type are available. ・Inductance range : 0.68～10µH(Standard type ); 0.47～7.2µH(High Power type); 0.35～5.6µH (Ultra Power Type).

CEP125NP-1R0M-HD

Abstract: CEP125NP-1R8M 0R4N
Contextual Info: Power Inductors <SMD Type: CEP Series> Type: CEP125 ◆ Product Description ・12.9x12.9mm Max. L×W , 5.6mm Max. height ・Standard Type,High Power Type,Ultra Power Type are available. ・Inductance range : 0.68～10µH(Standard type ); 0.47～7.2µH(High Power type); 0.35～5.6µH (Ultra Power Type).

Contextual Info: CEP1012/CEB1012 N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 15A, RDS ON = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.