CEB10N6 Search Results

CEB10N6 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CEB10N6		Chino-Excel Technology	N-channel Enhancement Mode Field Effect Transistor TO220/TO263 Package		Original	PDF

CEB10N6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CEB10N6 Abstract: CEF10N6 CEP10N6 Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).	Original	CEP10N6/CEB10N6 CEF10N6 CEP10N6 CEB10N6 O-263 O-220 O-220F O-220/263 CEB10N6 CEF10N6 CEP10N6	PDF
Contextual Info: CEP10N6/CEB10N6 PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 10A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.	Original	CEP10N6/CEB10N6 O-220 O-263	PDF
CEB10N6 Abstract: CEF10N6 CEP10N6 Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).	Original	CEP10N6/CEB10N6 CEF10N6 CEP10N6 CEB10N6 O-263 O-220 O-220F O-220/263 CEB10N6 CEF10N6 CEP10N6	PDF

Catalog Datasheet

Type

Document Tags

PDF

CEB10N6

Abstract: CEF10N6 CEP10N6
Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).

Original

CEP10N6/CEB10N6 CEF10N6 CEP10N6 CEB10N6 O-263 O-220 O-220F O-220/263 CEB10N6 CEF10N6 CEP10N6

PDF

Contextual Info: CEP10N6/CEB10N6 PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 10A , RDS ON =1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.

Original

CEP10N6/CEB10N6 O-220 O-263

PDF

CEB10N6

Abstract: CEF10N6 CEP10N6
Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).

Original

CEP10N6/CEB10N6 CEF10N6 CEP10N6 CEB10N6 O-263 O-220 O-220F O-220/263 CEB10N6 CEF10N6 CEP10N6

PDF