CEP05P03 Search Results

CEP05P03

Contextual Info: CEP05P03/CEB05P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -18A,RDS ON = 70mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

DSA001872

Contextual Info: CEP05P03/CEB05P03 4 Single P-Channel Enhancement Mode MOSFET FEATURES D -30V , -4.9A , RDS ON =70m Ω @VGS=-10V RDS(ON)=120mΩ @VGS=-4.5V Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package for through hole.

CEP05P03

Abstract: S800C-D
Contextual Info: CEP05P03 PRELIMINARY Single P-Channel Enhancement Mode MOSFET FEATURES • -3 0 V , - 4 .9 A , RDS ON =70m Q D @ Vgs=-1 0 V Rds(on)=120itiQ @ V gs =-4.5V • Super high dense cell design for extremely low R d s (on>. • High power and current handling capability.

Contextual Info: CEP05P03/CEB05P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -18A,RDS ON = 70mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223