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    CEP75N06

    Abstract: CEB75N06 260uH
    Text: CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS ON = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.


    Original     		PDF CEP75N06/CEB75N06 O-220 O-263 CEP75N06 CEB75N06 260uH

    CEP75N06

    Abstract: 4V12 CEB75N06
    Text: CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 75A, RDS ON = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP75N06/CEB75N06 O-220 O-263 CEP75N06 4V12 CEB75N06