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    CEB703 Search Results

    CEB703 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEB7030 Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    CEB7030L Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    CEB7030L Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    CEB703AL Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    CEB703ALS2 Chino-Excel Technology N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF

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    CEP7030L

    Abstract: CEB7030L ceB703 c2025
    Text: CEP7030L/CEB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 65A , RDS ON =8mΩ @VGS=10V. RDS(ON)=12m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.


    Original     		PDF CEP7030L/CEB7030L O-220 O-263 CEP7030L CEB7030L ceB703 c2025

    cep7030L

    Abstract: QG60 CEB7030L
    Text: CEP7030L/CEB7030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 65A,RDS ON = 8mΩ @VGS = 10V. RDS(ON) = 12mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP7030L/CEB7030L O-220 O-263 cep7030L QG60 CEB7030L

    TRANSISTOR cep703al

    Abstract: CEP703AL ceb703al A3525 CEP703
    Text: CEP703AL/CEB703AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS ON =17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability.


    Original     		PDF CEP703AL/CEB703AL TRANSISTOR cep703al CEP703AL ceb703al A3525 CEP703

    CEP703AL

    Abstract: TRANSISTOR cep703al
    Text: CEP703AL/CEB703AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS ON =17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability.


    Original     		PDF CEP703AL/CEB703AL O-220 O-263 CEP703AL TRANSISTOR cep703al

    CEP703AL

    Abstract: ceB703 10V Schottky Diode ceb703al
    Text: CEP703ALS2/CEB703ALS2 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 40A , RDS ON =17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.


    Original     		PDF CEP703ALS2/CEB703ALS2 CEP703ALS2/CEB703AL2 CEP703AL ceB703 10V Schottky Diode ceb703al

    CEP703AL

    Abstract: TRANSISTOR cep703al ceb703al
    Text: CEP703AL/CEB703AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS ON =17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability.


    Original     		PDF CEP703AL/CEB703AL O-220 O-263 CEP703AL TRANSISTOR cep703al ceb703al

    cep703al

    Abstract: TRANSISTOR cep703al ceb703al CEP- 83 A
    Text: CEP703AL/CEB703AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS ON = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP703AL/CEB703AL O-220 O-263 cep703al TRANSISTOR cep703al ceb703al CEP- 83 A

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    CEP703AL

    Abstract: TRANSISTOR cep703al B703A P4010 B703AL ceb703al P703 B703
    Text: CEP703AL/CEB703AL March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 4 0 A , R ds on =1 7mQ @V g s =1 0V. RDS(ON)=30mQ @ V g s =4.5V. • Super high dense cell design for extremely low R ds (on ). • High power and current handling capability.


    OCR Scan     		PDF CEP703AL/CEB703AL O-22Q O-263 to-263 t0-220 P703AL/CE B703AL CEP703AL TRANSISTOR cep703al B703A P4010 B703AL ceb703al P703 B703

    B703A

    Abstract: GS109 P703
    Text: CEP703ALS2/CEB703ALS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Typ Max Unit Symbol Condition Min Drain-Source Breakdown Voltage BV dss V gSz OV, ID=250[i A 30 Zero Gate Voltage Drain Current Idss V ds =24V, Vgs =0V 10 [iA Gate-Body Leakage


    OCR Scan     		PDF CEP703ALS2/CEB703ALS2 B703A GS109 P703

    CEP7030L

    Abstract: b703 CEB7030L B7030 p7030l
    Text: JU N 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 6 5 A , Rds on>= 8m Q D @ V gs =10V. Rd s(o n = 12itiQ @ V gs =4.5V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability.


    OCR Scan     		PDF TQ-220 O-263 to-263 t0-220 CEP7030L/CEB7030L CEP7030L b703 CEB7030L B7030 p7030l