RAPC722X
Abstract: 100uF 50v 50V 100uf upd168804 10uF 50V 10UF/50V B7B-XH-A MBRS260T3 BOARD CCB2 upc1688
Text: 5 4 3 2 1 D D P1 TEST_PIN TP1 TEST_PIN LED1 K R1 1 2 NC1 Minus Plus NC2 Thermal + C70 10uF/50V + C71 10uF/50V + C1 10uF/50V C3 D2 0.1uF/50V C53 0.1uF/50V MBRS260T3 + 10uF/50V_UM 36V ZD1 LUXEON_K2 W N1 TEST_PIN A DC_IN A + C69 +12V + K 0.33 4 3 5 uPA2756GR
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10uF/50V
1uF/50V
MBRS260T3
10uF/50V
uPA2756GR
RAPC722X
1uF/50V
RAPC722X
100uF 50v
50V 100uf
upd168804
10uF 50V
B7B-XH-A
MBRS260T3
BOARD CCB2
upc1688
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PD168804
Abstract: 2SK2414Z 48-PIN 900 v 9 amp mosfet TO-3
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD168804 4 CH BUCK OR BOOST SELECTABLE CONSTANT CURRENT DRIVER IC WITH EXTERNAL POWER MOSFETS DESCRIPTION μ PD168804 is a 4 channel constant current driver IC. One from “Buck” or “Boost” topology is selectable by the
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PD168804
PD168804
2SK2414Z
48-PIN
900 v 9 amp mosfet TO-3
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PD168804
Abstract: 2SK2414Z 48-PIN
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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D43256
Abstract: PD43256B-AX
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD43256B-X 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD43256B-X is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits CMOS static RAM. This device is an extended-operating-temperature version of the µPD43256B (X version, –25 to +85 °C). And A and B
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PD43256B-X
256K-BIT
32K-WORD
PD43256B-X
PD43256B
28-pin
D43256
PD43256B-AX
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D43256
Abstract: D43256B PD43256BCZ-85L PD43256BCZ-70L PD43256BGU-70LL UPD43256 pd43256bc
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µ PD43256B is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.
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PD43256B
256K-BIT
32K-WORD
PD43256B
28-pin
D43256
D43256B
PD43256BCZ-85L
PD43256BCZ-70L
PD43256BGU-70LL
UPD43256
pd43256bc
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D43256B
Abstract: PD43256BCZ-70L uPD43256BCZ-70LL PD43256B PD43256BGU uPD43256 43256B-B PD43256BCZ-85L d4325 PD43256BGU-70
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43256B is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.
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PD43256B
256K-BIT
32K-WORD
PD43256B
28-pin
PD43256B-L
PD43256B-LL
D43256B
PD43256BCZ-70L
uPD43256BCZ-70LL
PD43256BGU
uPD43256
43256B-B
PD43256BCZ-85L
d4325
PD43256BGU-70
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84-PIN
Abstract: ML2656CQ ic RH4
Text: April 1997 Preliminary ML2656 10BASE-T Multi-port Repeater 6 GENERAL DESCRIPTION FEATURES The ML2656 is an integration of six (6) 10BASE-T transceivers, designed for repeater applications. The ML2656 contains a TTL-compatible microprocessor interface for status and control.
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ML2656
10BASE-T
ML2656
10BASE-T
84-PIN
ML2656CQ
ic RH4
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LC371000SP
Abstract: lc371000 CCA1 A2 SM20L
Text: Ordering number: EN3K5086A CMOS LSI LC371000SP, SM-10/LC371000SP, SM-20LV S A \Y O 1 MEG 131072 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371000SP, SM-10 and LC371000SP, SM-20LV are 1048576-bit M ask Program m able Read Only
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EN3K5086A
LC371000SP,
SM-10/LC371000SP,
SM-20LV
012A-DIP28
LC371000SP]
SM-10
SM-20LV
LC371000SP
lc371000
CCA1 A2
SM20L
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ra2t
Abstract: a0191 SOP28 Package
Text: Ordering number: EN 4484B CMOS LSI No. 4484B i SAHYO LC3564RM.RT-1 OLV/12LV/15LV 64K 8192 words x 8 bits SRAM • Common-pin input/outputs, 3-state output Overview The LC3564RM,RT are 8192-word x 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They oper
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4484B
LC3564RM
OLV/12LV/15LV
8192-word
00171S0
ra2t
a0191
SOP28 Package
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Untitled
Abstract: No abstract text available
Text: Memory ICs 256k 32k x 8 Bit SRAM BR62256F-70LL The BR62256F-70LL is a 32768 word x 8 bit asynchronous high-speed CMOS static RAM. it runs on a 5V single power supply, and in addition to its low power consum ption and high-speed, its low standby current enables its use
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BR62256F-70LL
BR62256F-70LL
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D1044
Abstract: QFP44 TDA8767
Text: Objective specification Philips Semiconductors 12-bit high-speed analog-to-digital converter TD A 8767 APPLICATIONS FEATURES 1 2 -bit • High-speed analog-to-digital conversion for resolution Sampling rate up to 30 MHz - Video signal digitizing -3 dB bandwidth of 18 MHz
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12-bit
TDA8767
7110fl2b
01044HM
D1044
QFP44
TDA8767
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN-% 50B7A | CMOS LSI LC371100SP, SM-10/LC37110OSP, SM-20LaT I s /m ro 1 MEG 131072 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371100SP, SM-10 and LC371100SP, SM-20LV are 1048576-bit M ask Program m able Read O nly
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50B7A
LC371100SP,
SM-10/LC37110OSP,
SM-20LaT
SM-10
SM-20LV
1048576-bit
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d27c1024
Abstract: PD27c1024 uPD27C1024
Text: NEC //PD 27C 1024 6 5 ,5 3 6 X 16-BIT CMOS UV EPROM NEC Electronics Inc. Description Pin Configuration The^PD27C1024 is a 1,048,576-bit, ultraviolet erasable and electrically programmable ROM fabricated with an advanced CMOS process for substantial power savings.
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16-BIT
40-Pin
uPD27C1024
576-bit,
//PD27C1024
013Cfluorescent
254-nm
the/jPD27C1024
/jPD27C1024s
d27c1024
PD27c1024
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4327
Abstract: LC36256ALL LC36256ALL-10 LC36256ALL-12 LC36256ALL-70 LC36256ALL-85 LC36256AMLL-10 LC36256AMLL-12 LC36256AMLL-70 LC36256AMLL-85
Text: [Ordering number : EN4327 Asynchronous Silicon Gate CMOS LSI LC36256ALL, AMLL-70/85/10/12 No. 4327 S A \Y O 256 K 32768 words x 8 bits SRAM Overview Package Dimensions The LC36256ALL, AM LL-70/85/10/12 are fully asynchronous silicon gate CMOS static RAMs with an
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EN4327
LC36256ALL,
AMLL-70/85/10/12
AMLL-70/85/10/12
LC36256ALL/AMLL
4327
LC36256ALL
LC36256ALL-10
LC36256ALL-12
LC36256ALL-70
LC36256ALL-85
LC36256AMLL-10
LC36256AMLL-12
LC36256AMLL-70
LC36256AMLL-85
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JPD447-1
Abstract: LPD447 UPD447D PO447
Text: N EC NEC Microcomputers, Inc. ^ PD 447 /i. PD447-1 fx PD447-2 fo liT ' 2048 x 8 BIT ST A T IC C M O S RAM D E S C R IP T IO N The ¿¿PD447 is a high speed, low power, 2048 word by 8 bit static CMOS RAM fabricated using an advanced silicon gate CMOS technology. A unique circuitry tech
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uPD447-1
uPD447-2
PD447
pPD447
TheAiPD447
24-pin
/1PD447
PD447C
juPD447D
JPD447-1
LPD447
UPD447D
PO447
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DIP32
Abstract: LC371100SP SM-10 SANYO DL
Text: I Ordering number : ENÎ8 50B7A CMOS LSI No. 5K 5087A SAMYO LC371100SP, SM-10/LC37110OSP, SM-20LV 1 MEG 131072 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371100SP, SM-10 and LC371100SP, SM-20LV are 1048576-b it M ask Program m able Read Only
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50B7A
LC371100SP,
SM-10/LC37110OSP,
SM-20LV
SM-10
SM-20LV
1048576-bit
DIP32
LC371100SP
SANYO DL
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Untitled
Abstract: No abstract text available
Text: April 1997 Preliminary % M i c r o Linear ML2656 10BASE-T Multi-port Repeater 6 GENERAL DESCRIPTION FEATURES The ML2656 is an integration of six (6) 10BASE-T transceivers, designed for repeater applications. The M L2656 contains a TTL-compatible microprocessor
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ML2656
10BASE-T
ML2656
L2656
10BA5E-T
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uPD447-2
Abstract: No abstract text available
Text: N E C M i c r o c o m p u t e r s , I n c . ^ p d u 7 ^ /x PD447-1 H PD447-2 2048 x 8 BIT STATIC CMOS RAM D E S C R IP T IO N The /jPD447 is a high speed, low power, 2048 word by 8 bit static CMOS RAM fabricated using an advanced silicon gate CMOS technology. A unique circuitry tech
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uPD447-1
uPD447-2
/jPD447
fxPD447
PD447
PD447C
juPD447D
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ,uPD29F008L 8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY 1 M-WORD BY 8-BIT BYTE MODE Description The ¿iPD29F008L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with a 8,388,608bit configuration. It possesses an automatic single Byte program function and an automatic block erase function that
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uPD29F008L
iPD29F008L
608bit
PPD29F008L
S40GZ-50-LKH1
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aml 10 series
Abstract: c 4663 LC36256AL LC36256AL-10W LC36256AL-12W LC36256AL-70W LC36256AL-85W LC36256AML-10W LC36256AML-12W LC36256AML-70W
Text: Ordering number: ENiK4663 Asynchronous Silicon Gate CMOS LSI no.s* I/_ LC36256AL, AML-70W/85W/1OW/12W SANYO 256 K 32768 words x 8 bits SRAM Preliminary Overview Package Dimensions The LC36256AL, AML-70W/85W/10W/12W are fully asynchronous silicon gate CMOS static RAMs with an
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LC36256AL,
AML-70W/85W/10W/12W
AML-70W/85W/10W/12W
LC36256AL-70W,
LC36256AML-70W
aml 10 series
c 4663
LC36256AL
LC36256AL-10W
LC36256AL-12W
LC36256AL-70W
LC36256AL-85W
LC36256AML-10W
LC36256AML-12W
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Untitled
Abstract: No abstract text available
Text: SEC /¿PD27C512G/G 5 2 4 2 8 8 B IT C M O S ONE T IM E PR O M DESCRIPTION The fiP027C512C/G is a 524 288 bit 65 536 x 8 bit one tim e programmable read-oniy memory (OT PROM). It operates from a single +5 V power supply, making it ideal for microprocessor applications. It is fabricated using an
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uPD27C512G/G
fiP027C512C/G
mPD27CS1
28-pin-
PD27C512C/G
28-pin
538-words
MPD27C512C/G--15)
jiP027C512C/G
1001J
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NEC d446c
Abstract: d446c-2 d446c PD446C d446c-2 RAM PD446C-3 D446* nec D446* RAM MPD446C-3 pd446
Text: SEC NEC Electronics Inc. ¿¿PD446 2 ,0 4 8 X 8-B IT STATIC CMOS RAM Revision 3 Description Pin Configuration The ¿¿PD446 is a high-speed, low-power, 2048-word by 8bit static CMOS RAM fabricated with advanced silicongate CMOS technology. A unique circuitry technique
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uPD446
2048-word
mPD446
fiPD446
24-pin
nPD446
PD446
NEC d446c
d446c-2
d446c
PD446C
d446c-2 RAM
PD446C-3
D446* nec
D446* RAM
MPD446C-3
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D449c
Abstract: HPD449C-111L
Text: NEC NEC Electronics Inc. mP D 4 4 9 2 , 0 4 8 X 8 -B IT STATIC C M O S RAM Revision 4 D escrip tion Pin C on fig u ratio n The ^PD449 is a high-speed, tow-power, 2048-word by 8bit sta tic CMOS RAM fabricated w ith advanced s ilic o n gate CMOS technology. A unique circ u itry technique
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uPD449
2048-word
jiPD449
fiPD449
24-pin
nPD449C-L/
iPD449C/
10fiA
D449c
HPD449C-111L
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