C5886A Search Results

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Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold

C5886A Price and Stock

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Toshiba America Electronic Components 2SC5886A,L1XHQ(O TRANSISTOR NPN BIPO PWMOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC5886A,L1XHQ(O	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SC5886A(T6L1NQ) Trans GP BJT NPN 50V 5A 3-Pin New PW-Mold Emboss T/R - Tape and Reel (Alt: 2SC5886A(T6L1,NQ))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SC5886A(T6L1NQ)	Reel		14 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.20815	Buy Now
Avnet Asia	2SC5886A(T6L1NQ)		10,000	24 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.3281	Buy Now
Toshiba America Electronic Components 2SC5886A(T6L1,NQ) Bipolar Transistors - BJT NPN VCE 0.22V 95ns 400 to 1000 hFE 5A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	2SC5886A(T6L1,NQ)					1 $1.03 10 $0.644 100 $0.425 1000 $0.299 10000 $0.229	Get Quote
EBV Elektronik	2SC5886A(T6L1,NQ)			17 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

C5886A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C5886A Abstract: No abstract text available Text: C5886A TOSHIBA Transistor Silicon NPN Epitaxial Type C5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)	Original	2SC5886A C5886A	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
C5886A Abstract: 2SC5886 2SC5886A C5886 Text: C5886A TOSHIBA Transistor Silicon NPN Epitaxial Type C5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)	Original	2SC5886A C5886A 2SC5886 2SC5886A C5886	PDF
C5886A Abstract: 2SC5886A Text: C5886A 東芝トランジスタシリコンNPNエピタキシャル形 C5886A ○ 高速スイッチング用 ○ DC-DC コンバータ用単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)	Original	2SC5886A C5886A 2SC5886A	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
Untitled Abstract: No abstract text available Text: C5886A 東芝トランジスタシリコンNPNエピタキシャル形 C5886A ○ 高速スイッチング用 ○ DC-DC コンバータ用単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)	Original	2SC5886A	PDF
C5886A Abstract: 2SC5886A Text: C5886A TOSHIBA Transistor Silicon NPN Epitaxial Type C5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)	Original	2SC5886A C5886A 2SC5886A	PDF
Untitled Abstract: No abstract text available Text: C5886A TOSHIBA Transistor Silicon NPN Epitaxial Type C5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)	Original	2SC5886A	PDF
C5886A Abstract: 2SC5886A Text: C5886A TOSHIBA Transistor Silicon NPN Epitaxial Type C5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)	Original	2SC5886A C5886A 2SC5886A	PDF
GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Text: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124	PDF
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram	PDF
C5886A Abstract: 2SC5886A 2SC58 c5886 Text: C5886A 東芝トランジスタシリコンNPNエピタキシャル形 C5886A ○ 高速スイッチング用 ○ DC-DC コンバータ用単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)	Original	2SC5886A 20070701-JA C5886A 2SC5886A 2SC58 c5886	PDF