C5880 Search Results

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

2SA2093

Abstract: 2SC5880
Contextual Info: C5880 Transistors Power transistor 60V, 2A C5880 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)

C-5880SR

Abstract: A-5880E A-5880G A-5880SR A-5880Y C-5880E C-5880G C-5880Y
Contextual Info: C/A-5880X 2.3 INCH, 8Ű8 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color C-5880E A-5880E GaAsP/GaP Hi.effi Red C-5880G A-5880G GaP C-5880Y A-5880Y GaAsP/GaP Yellow C-5880SR A-5880SR GaAlAs Green Wave Electro-Optical Characteristics

5880

Abstract: 3400 A-5880E A-5880G A-5880H A-5880SR A-5880Y C-5880E C-5880G C-5880H
Contextual Info: C/A-5880X 2.3 INCH, 8 X 8 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp nm Electro-Optical Characteristics Vf(V)20mA Iv(ucd)10mA Typ. Max. Typ. C-5880H C-5880E C-5880G C-5880Y A-5880H A-5880E

Contextual Info: Power transistor 60V, 2A C5880 Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093

2SA2093

Abstract: 2SC5880 c5880 60V transistor npn 2a switching applications
Contextual Info: C5880 Transistors Power transistor 60V, 2A C5880 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and

c5880

Abstract: 2SA2093 2SC5880 2SA20
Contextual Info: C5880 Transistors Power transistor 60V, 2A C5880 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)

d7810

Abstract: L9141 MXM pinout U4900 J9002 K40 fet MARK G4 SOT363 Apple j9002 k50 apple ISL6269
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M78-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 33 503047 ENGINEERING RELEASED

IRLM2402

Abstract: c4977 cf325 NEC c5292 VD357 C5292 nec NEC "C4305" cf406 C4934 C5248
Contextual Info: 8 6 7 2 3 4 5 CK APPD FINO M23 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 19 397409 ENGINEERING RELEASED

Contextual Info: C5880 Transistors Power transistor 60V, 2A C5880 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)

c2240 transistor

Abstract: c5129 c5088 C2335 C5936 c2166 transistor c2335 r c2165 C5928 datasheet c2240 transistor
Contextual Info: REJ10B0161-0100 H8S, H8/300 Series C/C+ Compiler, Assembler, Optimizing Linkage Editor Compiler Package Ver.6.01 User’s Manual Renesas Microcomputer Development Environment System Rev.1.00 Revision Date: Jan. 12, 2005 Keep safety first in your circuit designs!

r4363

Abstract: L9141 NTC 16D-7 MXM pinout C4253 PP2102 d7810 imac MLB ntc 10d-7 PP1013
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. M72-DVT REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 34 503014 ENGINEERING RELEASED

cf325

Abstract: Broadcom EMI NEC c5292 UE401 c5885 CF-325 CE015 CF219 I1016 C1900 PCB
Contextual Info: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS 2 System Block Diagram FINO-M23 08/26/2005 4 Power Block Diagram FINO-M23 08/26/2005 5 Table Items FINO-M23 10/07/2005 6 FUNC TEST 1 OF 2 FINO-M23 08/26/2005 7 POWER CONN / ALIAS M33-PC 06/20/2005 8

Contextual Info: Power transistor 60V, 2A C5880 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load.