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    C30662E Search Results

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    C30662E Price and Stock

    Excelitas Technologies Corporation C30662EH

    SENSOR PHOTODIODE 1550NM TO18-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C30662EH Box 60 1
    • 1 $766.5
    • 10 $756.875
    • 100 $756.875
    • 1000 $756.875
    • 10000 $756.875
    		Buy Now

    Excelitas Technologies Corporation C30662EH-1

    SENSOR PHOTODIODE 1550NM TO18
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C30662EH-1 Box 25
    • 1 -
    • 10 -
    • 100 $869.75
    • 1000 $869.75
    • 10000 $869.75
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    Excelitas Technologies Corporation C30662EH-3

    SENSOR PHOTODIODE 1550NM TO18
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C30662EH-3 Box 25
    • 1 -
    • 10 -
    • 100 $756.8752
    • 1000 $756.8752
    • 10000 $756.8752
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    Excelitas Technologies Corporation C30662ECERH

    SENSOR PHOTODIODE 1550NM 2SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C30662ECERH Box 25
    • 1 -
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    • 100 $532.3752
    • 1000 $532.3752
    • 10000 $532.3752
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    Excelitas Technologies Corporation C30662ECERH-1

    SENSOR PHOTODIODE 1550NM 2SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C30662ECERH-1 Box 25
    • 1 -
    • 10 -
    • 100 $611.8752
    • 1000 $611.8752
    • 10000 $611.8752
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    C30662E Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C30662E PerkinElmer Optoelectronics Photodiode, InGaAs Avalanche Photodiode Original PDF
    C30662ECER PerkinElmer Optoelectronics Photodiode, InGaAs Avalanche Photodiode Original PDF
    C30662ECERH Excelitas Technologies INGAAS APD, 200UM, CERAMIC SUBMO Original PDF
    C30662ECERH Excelitas Technologies INGAAS APD, 200UM, CERAMIC SUBMO Original PDF
    C30662ECERH-1 Excelitas Technologies INGAAS APD, 200UM, CERAMIC SUBMO Original PDF
    C30662ECERH-1 Excelitas Technologies INGAAS APD, 200UM, CERAMIC SUBMO Original PDF
    C30662EH Excelitas Technologies INGAAS APD 200?M TO-18 Original PDF
    C30662EH Excelitas Technologies INGAAS APD 200?M TO-18 Original PDF
    C30662EH-1 Excelitas Technologies INGAAS APD, 200UM, TO-18 PACKAGE Original PDF
    C30662EH-1 Excelitas Technologies INGAAS APD, 200UM, TO-18 PACKAGE Original PDF
    C30662EH-3 Excelitas Technologies INGAAS APD, 200UM, TO-18 PACKAGE Original PDF
    C30662EH-3 Excelitas Technologies INGAAS APD, 200UM, TO-18 PACKAGE Original PDF

    C30662E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C30662E

    Abstract: PerkinElmer Avalanche Photodiode avalanche photodiode 1550nm sensitivity 1540nm C30645E avalanche photodiode bias avalanche photodiodes InGaAs apd photodiode photodiode Avalanche photodiode optel
    Text: D A T A S H E E T Optoelectronics C30645E/C30662E Series InGaAs Avalanche Photodiode Description Applications The C30645E/C30662E are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide high Q.E., high responsivity and low noise in the spectral range between 1100nm


    Original     		PDF C30645E/C30662E 1100nm 1700nm 1540nm, 1700nm) C30662E PerkinElmer Avalanche Photodiode avalanche photodiode 1550nm sensitivity 1540nm C30645E avalanche photodiode bias avalanche photodiodes InGaAs apd photodiode photodiode Avalanche photodiode optel

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original     		PDF CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E

    PerkinElmer tr 1700

    Abstract: PerkinElmer Avalanche Photodiode
    Text: Features and Benefits PerkinElmer’s new family of APD modules features built in amplifier and thermoelectric cooler. They are ideal for demanding LIDAR and range-finding applications. Ultra low noise equivalent power NEP Introduction The new LLAM series of avalanche


    Original     		PDF 12-lead DTS0108P PerkinElmer tr 1700 PerkinElmer Avalanche Photodiode

    diode d1n914

    Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
    Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP


    Original     		PDF C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30817com. diode d1n914 d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity

    C30902S

    Abstract: C30817E C30817 C30955EH
    Text: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Silicon and InGaAs APDs Photodiodes FOR Industrial & ANALYTICAL Applications Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range finder • Scanning video imager


    Original     		PDF C30902EH, C30921EH C30902SH, C30921SH C30902S C30817E C30817 C30955EH

    Untitled

    Abstract: No abstract text available
    Text: Large Area InGaAs Avalanche Photodiodes for 1550 nm eye-safe laser range finding applications Overview The C30645 and C30662 Series APDs are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide large quantum efficiency. Q.E. , high responsivity and low noise in the


    Original     		PDF C30645 C30662 cus49) 0411-803P

    C30817E

    Abstract: C30955EH
    Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Avalanche Photodiodes Silicon and InGaAs APDs Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range inder • Free space communication Product฀description hese rear entry “reach-through” silicon APDs ofer the best compromise in terms of cost and


    Original     		PDF C30902 C30902EH, C30921EH C30902SH, C30921SH C30817E C30955EH

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30645 and C30662 Series Large Area InGaAs Avalanche Photodiodes Key Features •      Spectral response 1100 - 1700 nm High responsivity Low dark current and noise Large area RoHS-compliant Available with lead-solder


    Original     		PDF C30645 C30662 lo8628

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection LLAM Series 900/1060/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules LLAM Key Features E LLAM-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.


    Original     		PDF 900/1060/1550/1550E LLAM-1550E 12-lead

    C30817E

    Abstract: No abstract text available
    Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP


    Original     		PDF C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30om. C30817E

    Untitled

    Abstract: No abstract text available
    Text: The C30645 and C30662 Series APDs are high speed, large area lnGaAs/lnP avalanche photodiodes. These devices provide high Q.E., high responsivity and low noise in the spectral range between 1100 nm and 1700 nm. They are optimized for use at a wavelength of


    Original     		PDF C30645 C30662 ISO-9001 DTS1104P

    C30817E

    Abstract: SILICON APD Pre-Amplifier
    Text: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.


    Original     		PDF C30659 900/1060/1550/1550E -1550E C30817EH, C30902EH, C30954EH C30956EH C30645EH C30662EH C30817E SILICON APD Pre-Amplifier

    C30817E

    Abstract: datasheet apd 1550
    Text: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,


    Original     		PDF C30659 12-lead C30817EH, C30902EH, C30954EH, C30956EH, C30645EH C30662EH, C30950 C30817E datasheet apd 1550