Rotary Switches
Abstract: D17-1
Text: 07/099 Moeller HPL0211-2001/2002 T0, T3 Rotary Switches Dimensions Surface mounting T0./I1 Drilling dimensions Base 33.5 c25 80 127 120 137 M20 27 T3./I2 Drilling dimensions Base M4 35.5 L-. 171 ∅8 180 160 M25 c25 100 c33 Surface mounting main switches
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HPL0211-2001/2002
Rotary Switches
D17-1
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Untitled
Abstract: No abstract text available
Text: KELCO C25 INLINE FLOW SWITCH High performance 25mm inline flow switches with advanced features make the C25 an ideal choice for many system designers. FEATURES One piece brass body All position mounting Diesel and oil models available Choice of two electrical modules
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Abstract: No abstract text available
Text: □IXYS MUBW 6-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Rectifier Brake Inverter V RRM = 1200V L.,. = 11 A FAVM U = 250 A VCES = 600 V VCES = 600 V 'C25 =7A VCE(Sat,= 2.0 V 'C25 =7A VCE,Sat,= 2.0 V
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Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 4-12 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 25 24 D 2Ï Preliminary data Rectifier Brake VRRM = 1600V L.,. = 11 A FAVM U = 250 A VCES Inverter = 1200 V ^C25 = 3.6 A VC E (sat) = 2.8 V VCES = 1200 V 'C25 = 3 - 6 A
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Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 10-12A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Rectifier Brake Inverter V RRM = 1600V L.,. FAVM = 11 A U = 250 A VCES = 1200 V V CES = 1200 V 'C25 =3-6 A VCE(Sat,= 2 - 8 V 'C25 = 13 A
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10-12A6
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Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 30-12 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake Inverter V RRM = 1600V *FAVM - 25 A U = 370 A VCES = 1200 V V CES = 1200 V 'C25 =18 A VCE(Sat,= 2.6 V 'C25 = 31 A V CE,Sat,= 2.2 V Features Input Rectifier Bridge D8 - D13 Symbol
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1xys
Abstract: 90a944
Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES ^C25 VCE(sat) Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MU 600 V V GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25°C 100 A ^C90 Tc = 90°C 60 A •cm Tc 200
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60N60
OT-227
1xys
90a944
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32N60BU1
Abstract: 32N60B h32n60b e5200 32N60BU
Text: HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES ^C25 v CE sat tr , = = = = 600 V 76 A 1.7V 200 ns Preliminary data Symbol Test Conditions ^C E S Tj 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M ft 600 V VGES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25°C
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IXGH39N60B
IXGH39N60BS
O-247
39N60BS)
32N60BU1
32N60B
h32n60b
e5200
32N60BU
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Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 35-06 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake Inverter VRRM = 1200V *FAVM - 25 A lC QM = 370 A FSM VCES = 600 V 'C25 = 23 A Vnc, H= 2.1 V CE(sat) VCES = 600 V 'C25 = 38 A Vnc, H= 2.1 V CE(sat) Features Input Rectifier Bridge D8 - D13
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Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 20-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Ì VCES = 600 V 'C25 = 23 A Vnc, H= 2.1 V CE(sat) > VCES = 600 V 'C25 = 1 1 A II VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM u t(s a t)
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IC2560
Abstract: thyristor module 700a NTC-10 ohm MIXA60WH1200TEH
Text: MIXA60WH1200TEH preliminary 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I TSM = 135 A I C25 = 700A VCE sat = = 85 A 1.8 V VCE(sat) = 60 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC
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MIXA60WH1200TEH
60747and
20111111b
IC2560
thyristor module 700a
NTC-10 ohm
MIXA60WH1200TEH
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Untitled
Abstract: No abstract text available
Text: MIXA50WB600TED tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1200 V VCES = 600 V VCES = 650 V I DAV = 119 A I C25 I FSM = 360 A VCE sat = = 29 A I C25 = 64 A 2 V VCE(sat) = 1.6 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number
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MIXA50WB600TED
60747and
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D65VML
Abstract: D65CEK1C5A C25DRJ350 S811V XTMC6A01 0A95 diode C25DND325 XTMF9A00
Text: Motor Control and Protection Contactors 2.1 Contactors Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Compact Definite Purpose Contactors . . . . . . . . . . . . . . . . . . . . . . . . 50 mm C25 Definite Purpose Contactors . . . . . . . . . . . . . . . . . . . . . .
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V9-T2-15
V9-T2-17
V9-T2-19
V9-T2-22
V9-T2-23
V9-T2-26
V9-T2-32
V9-T2-36
V9-T2-37
V9-T2-41
D65VML
D65CEK1C5A
C25DRJ350
S811V
XTMC6A01
0A95 diode
C25DND325
XTMF9A00
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Untitled
Abstract: No abstract text available
Text: □IXYS MUBW 15-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data VCES = 600 V Ì 'C25 = 18 A Vnc, H= 2.1 V CE(sat) > VCES = 600 V 'C25 = 1 1 A II VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM u t(s a t)
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smd diode 819
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C
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IXGH32N60AU1
IXGH32N60AU1S
O-247
32N60AU1S)
IXGH32N60AU1
IXQH32N60AU1S
XGH32N60AU1
smd diode 819
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IXGH32N60AU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90
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32N60AU1
32N60AU1S
4b6b22b
IXGH32N60AU1
IXGH32N60AU1S
4bflb22b
0003bQb
IXGH32N60AU1
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Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C
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IXGH30N60BD1
150PC
15CFC;
O-247
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3un6
Abstract: No abstract text available
Text: 'O I 1 Advanced Technical Information wvv.wkvi'w^v.sv.v.viv.v.viv.v.viv.v.viv.v.v. IXGH 30N60BD1 IXGT 30N60BD1 IGBT with Diode V CES = 600 V = 60 A = 1.8 V = 100 ns ^C25 V CE sat
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30N60BD1
30N60BD1
O-268
freq00
3un6
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Untitled
Abstract: No abstract text available
Text: nixYS HiPerFAST IGBT with Diode IXGH 32N50BU1 V CES ^C25 V CE sat t rfi Symbol Test Conditions VCES VCGR T, =25°Cto150°C 500 V Tj = 25eC to 150° C; RGE= 1 MQ 500 V VGES VGEM Continuous 120 V Transient ¿30 V ^C25 Tc = 25° C ^C90 Tc =90° C ^CM Tc = 25° C, 1 ms
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32N50BU1
Cto150
O-247
32NS0BU1
B2-47
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IXSN35N120
Abstract: No abstract text available
Text: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings
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35N120AU1
OT-227
IXSN35N120AU1
4bflb22b
IXSN35N120
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Untitled
Abstract: No abstract text available
Text: PIXYS 1 HiPerFAST IGBT V CES IXGH 24N60A ^C25 V v CE sat tfi 600 V 48 A 2.7 V 275 ns « Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Td = 25 °C to 150°C; RQE = 1 M£2 600 V v GES Continuous ±20 V V GEM Transient ±30 V ^ C25 Tc = 25 °C
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24N60A
24N60A
24N60AU1
4bflb22b
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1SV215
Abstract: No abstract text available
Text: 1SV215 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV215 CATV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 10.5 typ. • Low series resistance: rs = 0.6 Ω (typ.) • Excellent C-V characteristics, and small tracking error.
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1SV215
1SV215
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Untitled
Abstract: No abstract text available
Text: 1SV215 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV215 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 10.5 typ. · Low series resistance: rs = 0.6 Ω (typ.) · Excellent C-V characteristics, and small tracking error.
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1SV215
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Abstract: No abstract text available
Text: IXA70I1200NA XPT IGBT VCES = 1200 V I C25 = 100 A VCE sat = 1.8 V Single IGBT Part number IXA70I1200NA Backside: collector (C) 3 (G) 2 (E) 1+4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Easy paralleling due to the positive temperature
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IXA70I1200NA
OT-227B
60747and
20131024c
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